RU2012144439A - PHOTOELECTRIC MODULE WITH STABILIZED POLYMER - Google Patents

PHOTOELECTRIC MODULE WITH STABILIZED POLYMER Download PDF

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RU2012144439A
RU2012144439A RU2012144439/04A RU2012144439A RU2012144439A RU 2012144439 A RU2012144439 A RU 2012144439A RU 2012144439/04 A RU2012144439/04 A RU 2012144439/04A RU 2012144439 A RU2012144439 A RU 2012144439A RU 2012144439 A RU2012144439 A RU 2012144439A
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poly
vinyl butyral
benzotriazole
layer
module according
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RU2012144439/04A
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RU2528397C2 (en
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Вэйхун ЦУЙ
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Солютиа, Инк.
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
    • B32B17/1055—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer
    • B32B17/10761—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer containing vinyl acetal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
    • B32B17/1055—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer
    • B32B17/10678—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer comprising UV absorbers or stabilizers, e.g. antioxidants
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/16—Nitrogen-containing compounds
    • C08K5/34—Heterocyclic compounds having nitrogen in the ring
    • C08K5/3467—Heterocyclic compounds having nitrogen in the ring having more than two nitrogen atoms in the ring
    • C08K5/3472—Five-membered rings
    • C08K5/3475—Five-membered rings condensed with carbocyclic rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
    • H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/12—Photovoltaic modules
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

1. Фотоэлектрический модуль, включающий:базовую подложку;фотоэлектрическое устройство, расположенное в контакте с указанной базовой подложкой и содержащее металлический компонент;поли(винилбутиральный) слой, расположенный в контакте с указанным фотоэлектрическим устройством и включающий 1Н-бензотриазол или соль 1Н-бензотриазола; изащитную подложку, расположенную в контакте с указанным поли(винилбутиральным) слоем.2. Модуль по п.1, отличающийся тем, что указанное фотоэлектрическое устройство является тонкопленочным фотоэлектрическим устройством.3. Модуль по п.2, отличающийся тем, что указанный поли(винилбутиральный) слой включает от 0,001 до 5 весовых процентов 1Н-бензотриазола.4. Модуль по п.2, отличающийся тем, что указанный поли(винилбутиральный) слой включает от 0,1 до 0,4 весовых процентов 1Н-бензотриазола.5. Модуль по п.2, отличающийся тем, что указанный поли(винилбутиральный) слой включает от 1 до 5 весовых процентов 1Н-бензотриазола.6. Модуль по п.2, отличающийся тем, что указанный поли(винилбутиральный) слой дополнительно включает фенольный антиоксидант.7. Модуль по п.2, отличающийся тем, что указанным металлом является висмут, медь, кадмий, свинец, олово, цинк, серебро, золото, индий, палладий, платина, алюминий, сурьма, хром, железо, никель, родий, тантал, титан или ванадий.8. Модуль по п.2, отличающийся тем, что указанным металлом является серебро.9. Модуль по п.2, отличающийся тем, что указанный металлический компонент используется в качестве проводящего слоя.10. Полимерный промежуточный слой, включающий поли(винилбутиральный) лист, включающий от 0,001 до 5 весовых процентов 1Н-бензотриазола.11. Промежуточный слой по п.10, отл�1. A photovoltaic module comprising: a base substrate; a photovoltaic device in contact with said base substrate and containing a metal component; a poly (vinyl butyral) layer located in contact with said photovoltaic device and comprising 1H-benzotriazole or a salt of 1H-benzotriazole; a protective substrate located in contact with said poly (vinyl butyral) layer. 2. The module according to claim 1, characterized in that said photovoltaic device is a thin-film photovoltaic device. The module according to claim 2, characterized in that said poly (vinyl butyral) layer comprises from 0.001 to 5 weight percent 1H-benzotriazole. The module according to claim 2, characterized in that said poly (vinyl butyral) layer comprises from 0.1 to 0.4 weight percent 1H-benzotriazole. The module according to claim 2, characterized in that said poly (vinyl butyral) layer comprises from 1 to 5 weight percent of 1H-benzotriazole. The module according to claim 2, characterized in that said poly (vinyl butyral) layer further comprises a phenolic antioxidant. The module according to claim 2, characterized in that said metal is bismuth, copper, cadmium, lead, tin, zinc, silver, gold, indium, palladium, platinum, aluminum, antimony, chromium, iron, nickel, rhodium, tantalum, titanium or vanadium. 8. The module according to claim 2, characterized in that said metal is silver. The module according to claim 2, characterized in that said metal component is used as a conductive layer. A polymer intermediate layer comprising a poly (vinyl butyral) sheet comprising from 0.001 to 5 weight percent 1H-benzotriazole. 11. The intermediate layer of claim 10, ex

Claims (19)

1. Фотоэлектрический модуль, включающий:1. Photovoltaic module, including: базовую подложку;base substrate; фотоэлектрическое устройство, расположенное в контакте с указанной базовой подложкой и содержащее металлический компонент;a photovoltaic device in contact with said base substrate and comprising a metal component; поли(винилбутиральный) слой, расположенный в контакте с указанным фотоэлектрическим устройством и включающий 1Н-бензотриазол или соль 1Н-бензотриазола; иa poly (vinyl butyral) layer in contact with said photovoltaic device and comprising 1H-benzotriazole or a salt of 1H-benzotriazole; and защитную подложку, расположенную в контакте с указанным поли(винилбутиральным) слоем.a protective substrate located in contact with the specified poly (vinyl butyral) layer. 2. Модуль по п.1, отличающийся тем, что указанное фотоэлектрическое устройство является тонкопленочным фотоэлектрическим устройством.2. The module according to claim 1, characterized in that said photovoltaic device is a thin-film photovoltaic device. 3. Модуль по п.2, отличающийся тем, что указанный поли(винилбутиральный) слой включает от 0,001 до 5 весовых процентов 1Н-бензотриазола.3. The module according to claim 2, characterized in that said poly (vinyl butyral) layer comprises from 0.001 to 5 weight percent 1H-benzotriazole. 4. Модуль по п.2, отличающийся тем, что указанный поли(винилбутиральный) слой включает от 0,1 до 0,4 весовых процентов 1Н-бензотриазола.4. The module according to claim 2, characterized in that said poly (vinyl butyral) layer comprises from 0.1 to 0.4 weight percent of 1H-benzotriazole. 5. Модуль по п.2, отличающийся тем, что указанный поли(винилбутиральный) слой включает от 1 до 5 весовых процентов 1Н-бензотриазола.5. The module according to claim 2, characterized in that said poly (vinyl butyral) layer comprises from 1 to 5 weight percent 1H-benzotriazole. 6. Модуль по п.2, отличающийся тем, что указанный поли(винилбутиральный) слой дополнительно включает фенольный антиоксидант.6. The module according to claim 2, characterized in that said poly (vinyl butyral) layer further comprises a phenolic antioxidant. 7. Модуль по п.2, отличающийся тем, что указанным металлом является висмут, медь, кадмий, свинец, олово, цинк, серебро, золото, индий, палладий, платина, алюминий, сурьма, хром, железо, никель, родий, тантал, титан или ванадий.7. The module according to claim 2, characterized in that said metal is bismuth, copper, cadmium, lead, tin, zinc, silver, gold, indium, palladium, platinum, aluminum, antimony, chromium, iron, nickel, rhodium, tantalum titanium or vanadium. 8. Модуль по п.2, отличающийся тем, что указанным металлом является серебро.8. The module according to claim 2, characterized in that said metal is silver. 9. Модуль по п.2, отличающийся тем, что указанный металлический компонент используется в качестве проводящего слоя.9. The module according to claim 2, characterized in that said metal component is used as a conductive layer. 10. Полимерный промежуточный слой, включающий поли(винилбутиральный) лист, включающий от 0,001 до 5 весовых процентов 1Н-бензотриазола.10. A polymer intermediate layer comprising a poly (vinyl butyral) sheet comprising from 0.001 to 5 weight percent 1H-benzotriazole. 11. Промежуточный слой по п.10, отличающийся тем, что указанный поли(винилбутиральный) лист включает от 0,1 до 0,4 весовых процентов 1Н-бензотриазола.11. The intermediate layer of claim 10, wherein said poly (vinyl butyral) sheet comprises from 0.1 to 0.4 weight percent 1H-benzotriazole. 12. Промежуточный слой по п.10, отличающийся тем, что указанный поли(винилбутиральный) лист включает от 1 до 5 весовых процентов 1Н-бензотриазола.12. The intermediate layer according to claim 10, characterized in that said poly (vinyl butyral) sheet comprises from 1 to 5 weight percent of 1H-benzotriazole. 13. Промежуточный слой по п.10, отличающийся тем, что указанный поли(винилбутиральный) лист дополнительно включает фенольный антиоксидант.13. The intermediate layer according to claim 10, characterized in that said poly (vinyl butyral) sheet further comprises a phenolic antioxidant. 14. Многослойный ламинат, включающий14. A multilayer laminate comprising первую подложку;first substrate; металлический компонент, расположенный в контакте с указанной первой подложкой;a metal component in contact with said first substrate; поли(винилбутиральный) слой, расположенный в контакте с указанным металлическим компонентом и включающий 1Н-бензотриазол или соль 1Н-бензотриазола; иa poly (vinyl butyral) layer in contact with said metal component and comprising 1H-benzotriazole or a salt of 1H-benzotriazole; and вторую подложку, расположенную в контакте с указанным поли(винилбутиральным) слоем.a second substrate located in contact with the specified poly (vinyl butyral) layer. 15. Многослойный ламинат по п.14, отличающийся тем, что указанный поли(винилбутиральный) лист включает от 0,1 до 0,4 весовых процентов 1Н-бензотриазола.15. The multilayer laminate according to 14, characterized in that said poly (vinyl butyral) sheet comprises from 0.1 to 0.4 weight percent 1H-benzotriazole. 16. Многослойный ламинат по п.14, отличающийся тем, что указанный поли(винилбутиральный) лист включает от 1 до 5 весовых процентов 1Н-бензотриазола.16. The multilayer laminate according to 14, characterized in that said poly (vinyl butyral) sheet comprises from 1 to 5 weight percent 1H-benzotriazole. 17. Многослойный ламинат по п.14, отличающийся тем, что указанный поли(винилбутиральный) лист включает от 0,001 до 5 весовых процентов 1Н-бензотриазола.17. The multilayer laminate according to claim 14, wherein said poly (vinyl butyral) sheet comprises from 0.001 to 5 weight percent 1H-benzotriazole. 18. Многослойный ламинат по п.14, отличающийся тем, что указанный поли(винилбутиральный) лист дополнительно включает фенольный антиоксидант.18. A multilayer laminate according to claim 14, wherein said poly (vinyl butyral) sheet further comprises a phenolic antioxidant. 19. Способ получения фотоэлектрического модуля, включающий:19. A method of obtaining a photovoltaic module, including: создание базовой подложки;creating a base substrate; формование фотоэлектрического устройства на указанной базовой подложке, содержащего металлический компонент;molding a photovoltaic device on said base substrate containing a metal component; размещение поли(винилбутирального) слоя в контакте с указанным фотоэлектрическим устройством, при этом указанный поли(винилбутиральный) слой включает 1Н-бензотриазол или соль 1Н-бензотриазола;placing the poly (vinyl butyral) layer in contact with said photovoltaic device, wherein said poly (vinyl butyral) layer comprises 1H-benzotriazole or a salt of 1H-benzotriazole; размещение защитной подложки в контакте с указанным поли(винилбутиральным) слоем; иplacing the protective substrate in contact with said poly (vinyl butyral) layer; and ламинирование указанной базовой подложки, указанного фотоэлектрического устройства, указанного поли(винилбутирального) слоя и указанной защитной подложки для получения указанного модуля. laminating said base substrate, said photovoltaic device, said poly (vinyl butyral) layer, and said protective substrate to form said module.
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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8338699B2 (en) 2009-01-22 2012-12-25 E I Du Pont De Nemours And Company Poly(vinyl butyral) encapsulant comprising chelating agents for solar cell modules
WO2016007889A1 (en) * 2014-07-10 2016-01-14 Georgia Tech Research Corporation Carbon nanotube compositions
US9822236B2 (en) * 2014-08-21 2017-11-21 Solutia Inc. Polymer interlayers comprising special effect metal pigments
WO2016032837A1 (en) * 2014-08-25 2016-03-03 Solutia Inc. Thin film photovoltaic module with stabilized polymer
EP3185309A1 (en) * 2015-12-23 2017-06-28 Amcor Flexibles Transpac Heat reflective solar module
RU168774U1 (en) * 2016-03-04 2017-02-17 Валентин Петрович Пивнов REFLECTIVE FILM

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2282026A (en) 1939-04-29 1942-05-05 Du Pont Treatment of polyvinyl acetal resins
US2282057A (en) 1939-04-29 1942-05-05 Du Pont Purification and stabilization of polyvinyl acetal resins
US3841890A (en) 1972-12-07 1974-10-15 Monsanto Co Plasticizer systems for polyvinyl butyral interlayers
US4064521A (en) 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
US4144217A (en) 1978-01-30 1979-03-13 Monsanto Company Plasticizer blends for polyvinyl butyral interlayers
US4902464A (en) 1985-07-02 1990-02-20 Monsanto Company Cross-linked polyvinyl butyral
US4814529A (en) 1985-07-02 1989-03-21 Cartier George E Cross-linked polyvinyl butyral
US4874814A (en) 1985-07-02 1989-10-17 Monsanto Company Cross-linked polyvinyl butyral
US4654179A (en) 1985-07-02 1987-03-31 Monsanto Company Polyvinyl butyral sheet roughness control
RU2030025C1 (en) * 1989-04-04 1995-02-27 Научно-производственное предприятие "Сатурн" Photoelectric module
US5013779A (en) 1989-12-08 1991-05-07 Monsanto Company Plasticized polyvinyl butyral and interlayer thereof
US5137954A (en) 1991-09-30 1992-08-11 Monsanto Company Polyvinyl butyral sheet
DE4215141C1 (en) * 1992-05-08 1993-12-09 Hoechst Ag Polyvinyl butyrale with improved thermal stability and light resistance
US5631315A (en) 1993-07-01 1997-05-20 Monsanto Company Plasticized polyvinyl butyral sheet containing epoxy resin
DE4324167A1 (en) * 1993-07-19 1995-01-26 Hoechst Ag Polyvinyl butyral films with improved optical properties
JPH07302926A (en) * 1994-04-30 1995-11-14 Canon Inc Solar cell module
US5728472A (en) 1996-11-14 1998-03-17 Monsanto Company Control of adhesion of polyvinyl butyral sheet to glass
EP1061589A3 (en) 1999-06-14 2008-08-06 Kaneka Corporation Method of fabricating thin-film photovoltaic module
EP1096577B9 (en) 1999-10-27 2016-06-01 Kaneka Corporation Method of producing a thin-film photovoltaic device
JP2001345273A (en) 2000-05-31 2001-12-14 Canon Inc Formation method of silicon-based thin film, silicon-based thin film, and photovoltaic element
JP4433131B2 (en) 2001-03-22 2010-03-17 キヤノン株式会社 Method for forming silicon-based thin film
US7271333B2 (en) 2001-07-20 2007-09-18 Ascent Solar Technologies, Inc. Apparatus and method of production of thin film photovoltaic modules
US7259321B2 (en) 2002-01-07 2007-08-21 Bp Corporation North America Inc. Method of manufacturing thin film photovoltaic modules
CN1665678A (en) * 2002-05-08 2005-09-07 目标技术有限公司 Silver alloy thin film reflector and transparent electrical conductor
CA2548573C (en) * 2003-12-26 2012-07-17 Sekisui Chemical Co., Ltd. Interlayer film for laminate glass and laminate glass
JPWO2005121227A1 (en) 2004-06-08 2008-04-10 株式会社ブリヂストン Resin film
US8716592B2 (en) 2004-07-12 2014-05-06 Quanex Ig Systems, Inc. Thin film photovoltaic assembly method
US7521006B2 (en) * 2004-09-06 2009-04-21 Nippon Kayaku Kabushiki Kaisha Diimmonium compound and use thereof
US7759158B2 (en) 2005-03-22 2010-07-20 Applied Materials, Inc. Scalable photovoltaic cell and solar panel manufacturing with improved wiring
US20070235073A1 (en) 2006-04-10 2007-10-11 Mario Napolitano Method of fabricating a thin film photovoltaic cell on a transparent substrate
US20080128018A1 (en) * 2006-12-04 2008-06-05 Richard Allen Hayes Solar cells which include the use of certain poly(vinyl butyral)/film bilayer encapsulant layers with a low blocking tendency and a simplified process to produce thereof
JP2011517096A (en) * 2008-04-04 2011-05-26 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー Solar cell module containing poly (vinyl butyral) encapsulant with high melt flow
US20100180940A1 (en) * 2009-01-20 2010-07-22 Weihong Cui Photovoltaic Module With Stabilized Polymer
JP2012516062A (en) * 2009-01-22 2012-07-12 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー Solar cell module having poly (vinyl butyral) encapsulant containing unsaturated heterocyclic compound

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