RU2011145603A - METHOD FOR PRODUCING THE MATRIX OF A MULTI-HAZED AUTO EMISSION CATHODE ON MONOCRYSTAL SILICON - Google Patents
METHOD FOR PRODUCING THE MATRIX OF A MULTI-HAZED AUTO EMISSION CATHODE ON MONOCRYSTAL SILICON Download PDFInfo
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- RU2011145603A RU2011145603A RU2011145603/07A RU2011145603A RU2011145603A RU 2011145603 A RU2011145603 A RU 2011145603A RU 2011145603/07 A RU2011145603/07 A RU 2011145603/07A RU 2011145603 A RU2011145603 A RU 2011145603A RU 2011145603 A RU2011145603 A RU 2011145603A
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Abstract
1. Способ изготовления матрицы многоострийного автоэмиссионного катода в виде композиционной наноалмазографитовой пленки, синтезированной в плазме микроволнового газового разряда паров углеводородных веществ, например, этанола в диапазоне давлений от 0,05 до 0,08 Па и температуре подложки от 200 до 350°С, отличающийся тем, что пленки осаждают толщиной от 1 до 1,5 нм на поверхность пластин монокристаллического кремния, которые подвергают высокотемпературному отжигу с последующим высокоанизотропным травлением на определенную глубину, которая зависит от температуры пластины в процессе осаждения углеродной пленки.2. Способ по п.1, отличающийся тем, что для увеличения поверхностной плотности столбчатых эмиссионных центров синтез композиционной наноалмазографитовой пленки на пластинах монокристаллического кремния проводят при более высоких температурах.1. A method of manufacturing a matrix of a multi-tip field emission cathode in the form of a composite nanodiamond film synthesized in a plasma of a microwave gas discharge of hydrocarbon vapor, for example, ethanol in the pressure range from 0.05 to 0.08 Pa and the substrate temperature from 200 to 350 ° C, the fact that the films are deposited with a thickness of 1 to 1.5 nm on the surface of single-crystal silicon wafers, which are subjected to high-temperature annealing followed by high-anisotropic etching to a certain depth, which Avis from the plate temperature during the deposition of carbon plenki.2. The method according to claim 1, characterized in that in order to increase the surface density of columnar emission centers, the synthesis of a composite nanodiamond film on single-crystal silicon wafers is carried out at higher temperatures.
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RU2011145603/07A RU2484548C1 (en) | 2011-11-09 | 2011-11-09 | Method for manufacture of matrix of multipoint autoemissive cathode based on single-crystal silicon |
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RU2011145603/07A RU2484548C1 (en) | 2011-11-09 | 2011-11-09 | Method for manufacture of matrix of multipoint autoemissive cathode based on single-crystal silicon |
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RU2011145603A true RU2011145603A (en) | 2013-05-20 |
RU2484548C1 RU2484548C1 (en) | 2013-06-10 |
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RU2011145603/07A RU2484548C1 (en) | 2011-11-09 | 2011-11-09 | Method for manufacture of matrix of multipoint autoemissive cathode based on single-crystal silicon |
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Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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RU2600505C1 (en) * | 2015-06-23 | 2016-10-20 | федеральное государственное автономное образовательное учреждение высшего образования "Нижегородский государственный университет им. Н.И. Лобачевского" | Method of forming epitaxial array of monocrystalline nanoislands of silicon on sapphire substrate in vacuum |
RU2654522C1 (en) * | 2016-06-22 | 2018-05-21 | Акционерное общество "Научно-исследовательский институт молекулярной электроники" (АО "НИИМЭ") | Method for increasing current density and degradation resistance of auto-emission codes on silicon plates |
RU2653843C2 (en) * | 2016-08-01 | 2018-05-15 | Акционерное общество "Научно-производственное предприятие "Алмаз" (АО "НПП "Алмаз") | Method of increasing the density and stability of a matrix current of a multiple auto-emission cathode |
RU2652651C2 (en) * | 2016-09-15 | 2018-04-28 | Федеральное государственное бюджетное учреждение науки Институт радиотехники и электроники им. В.А. Котельникова Российской академии наук | Method of the multi-pin auto emission cathode matrix manufacturing on a mono-crystalline silicon |
RU2770303C1 (en) * | 2021-04-20 | 2022-04-15 | Акционерное общество "Научно-производственное предприятие "Алмаз" (АО "НПП "Алмаз") | Nanocarbon material for suppression of secondary electron emission and method for its production |
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KR20000035592A (en) * | 1998-11-19 | 2000-06-26 | 가네코 히사시 | Carbon material, method for manufacturing the same material, field-emission type cold cathode using the same material and method for manufacturing the same cathode |
KR100307310B1 (en) * | 1999-01-27 | 2001-10-29 | 송자 | Manufacturing method for nano-size diamond whisker |
KR101307032B1 (en) * | 2005-06-22 | 2013-09-11 | 엘리멘트 식스 리미티드 | High colour diamond layer |
RU2309480C2 (en) * | 2005-08-04 | 2007-10-27 | Федеральное государственное унитарное предприятие "НПП "Контакт" | Material and method for manufacturing multipoint field-emission cathode |
JP4751841B2 (en) * | 2007-02-05 | 2011-08-17 | 財団法人高知県産業振興センター | Field emission type electrode and electronic device |
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Effective date: 20141110 |