RU2010107761A - SEMICONDUCTOR FERROMAGNETIC MATERIAL - Google Patents
SEMICONDUCTOR FERROMAGNETIC MATERIAL Download PDFInfo
- Publication number
- RU2010107761A RU2010107761A RU2010107761/02A RU2010107761A RU2010107761A RU 2010107761 A RU2010107761 A RU 2010107761A RU 2010107761/02 A RU2010107761/02 A RU 2010107761/02A RU 2010107761 A RU2010107761 A RU 2010107761A RU 2010107761 A RU2010107761 A RU 2010107761A
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- RU
- Russia
- Prior art keywords
- gallium
- semiconductor
- magnesium
- iron
- ferromagnetic material
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- Compounds Of Iron (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Полупроводниковый ферримагнитный материал, характеризующийся постоянством величины намагниченности насыщения при изменении индукции магнитного поля, который включает железо, галлий и магний, представляет собой гомогенный раствор оксидов железа, галлия и магния и отвечает формуле: ! Mg(Fe1-XGaX)2O4, ! где x=0,05÷0,25, ! при этом гомогенность раствора достигается применением метода самораспространяющегося высокотемпературного синтеза. A semiconductor ferrimagnetic material, characterized by a constant saturation magnetization when changing the magnetic field induction, which includes iron, gallium and magnesium, is a homogeneous solution of iron, gallium and magnesium oxides and corresponds to the formula:! Mg (Fe1-XGaX) 2O4,! where x = 0.05 ÷ 0.25,! wherein the homogeneity of the solution is achieved by using the method of self-propagating high-temperature synthesis.
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RU2010107761/02A RU2436859C2 (en) | 2010-03-04 | 2010-03-04 | Semi-conducting ferrimagnetic material |
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RU2010107761/02A RU2436859C2 (en) | 2010-03-04 | 2010-03-04 | Semi-conducting ferrimagnetic material |
Publications (2)
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RU2010107761A true RU2010107761A (en) | 2011-09-10 |
RU2436859C2 RU2436859C2 (en) | 2011-12-20 |
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RU2010107761/02A RU2436859C2 (en) | 2010-03-04 | 2010-03-04 | Semi-conducting ferrimagnetic material |
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RU (1) | RU2436859C2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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RU2657674C1 (en) * | 2017-08-14 | 2018-06-14 | Федеральное государственное бюджетное учреждение науки Институт общей и неорганической химии им. Н.С. Курнакова Российской академии наук (ИОНХ РАН) | METHOD FOR PRODUCING HETEROSTRUCTURE Mg(Fe1-XGaX)2O4/SI WITH STABLE INTERPHASE BOUNDARY |
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2010
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RU2436859C2 (en) | 2011-12-20 |
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MM4A | The patent is invalid due to non-payment of fees |
Effective date: 20180305 |