RU2006116830A - METHOD FOR PRODUCING ATOMIC-SMOOTH GALLIUM ARSENIDE - Google Patents
METHOD FOR PRODUCING ATOMIC-SMOOTH GALLIUM ARSENIDE Download PDFInfo
- Publication number
- RU2006116830A RU2006116830A RU2006116830/15A RU2006116830A RU2006116830A RU 2006116830 A RU2006116830 A RU 2006116830A RU 2006116830/15 A RU2006116830/15 A RU 2006116830/15A RU 2006116830 A RU2006116830 A RU 2006116830A RU 2006116830 A RU2006116830 A RU 2006116830A
- Authority
- RU
- Russia
- Prior art keywords
- gallium arsenide
- layer
- temperature
- substrate
- centrifuge
- Prior art date
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Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
RU2006116830/15A RU2319798C1 (en) | 2006-05-16 | 2006-05-16 | Method for preparing even-atom surface of gallium arsenide |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
RU2006116830/15A RU2319798C1 (en) | 2006-05-16 | 2006-05-16 | Method for preparing even-atom surface of gallium arsenide |
Publications (2)
Publication Number | Publication Date |
---|---|
RU2006116830A true RU2006116830A (en) | 2007-12-10 |
RU2319798C1 RU2319798C1 (en) | 2008-03-20 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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RU2006116830/15A RU2319798C1 (en) | 2006-05-16 | 2006-05-16 | Method for preparing even-atom surface of gallium arsenide |
Country Status (1)
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RU (1) | RU2319798C1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2453874C1 (en) * | 2011-01-11 | 2012-06-20 | Учреждение Российской академии наук Институт физики полупроводников им. А.В.Ржанова Сибирского отделения РАН (ИФП СО РАН) | Method of forming flat smooth surface of solid material |
CN115385309A (en) * | 2022-09-19 | 2022-11-25 | 西南交通大学 | Preparation method and application of two-dimensional oxygen-doped GaSe nanosheet |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2494493C1 (en) * | 2012-04-02 | 2013-09-27 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования Воронежский государственный университет инженерных технологий (ФГБОУ ВПО ВГУИТ) | Method to preserve surface of substrates from gallium arsenide |
-
2006
- 2006-05-16 RU RU2006116830/15A patent/RU2319798C1/en not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2453874C1 (en) * | 2011-01-11 | 2012-06-20 | Учреждение Российской академии наук Институт физики полупроводников им. А.В.Ржанова Сибирского отделения РАН (ИФП СО РАН) | Method of forming flat smooth surface of solid material |
CN115385309A (en) * | 2022-09-19 | 2022-11-25 | 西南交通大学 | Preparation method and application of two-dimensional oxygen-doped GaSe nanosheet |
Also Published As
Publication number | Publication date |
---|---|
RU2319798C1 (en) | 2008-03-20 |
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Legal Events
Date | Code | Title | Description |
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MM4A | The patent is invalid due to non-payment of fees |
Effective date: 20080517 |