RU2005137463A - METHOD FOR DETERMINING POTENTIALLY UNRELIABLE BIPOLAR TRANSISTORS - Google Patents

METHOD FOR DETERMINING POTENTIALLY UNRELIABLE BIPOLAR TRANSISTORS Download PDF

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RU2005137463A
RU2005137463A RU2005137463/28A RU2005137463A RU2005137463A RU 2005137463 A RU2005137463 A RU 2005137463A RU 2005137463/28 A RU2005137463/28 A RU 2005137463/28A RU 2005137463 A RU2005137463 A RU 2005137463A RU 2005137463 A RU2005137463 A RU 2005137463A
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Prior art keywords
bipolar transistors
potentially unreliable
determining potentially
current strength
value
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RU2005137463/28A
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Russian (ru)
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RU2309417C2 (en
Inventor
Митрофан Иванович Горлов (RU)
Митрофан Иванович Горлов
Александр Петрович Жарких (RU)
Александр Петрович Жарких
Игорь Алексеевич Шишкин (RU)
Игорь Алексеевич Шишкин
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Открытое акционерное общество "Концерн "Созвездие" (RU)
Открытое акционерное общество "Концерн "Созвездие"
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Priority to RU2005137463/28A priority Critical patent/RU2309417C2/en
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Claims (1)

Способ определения потенциально ненадежных биполярных транзисторов, заключающийся в том, что у биполярных транзисторов измеряют низкочастотный шум переходов эмиттер-база (Э-Б) и коллектор-база (К-Б) при двух значениях рабочего тока, отличающийся тем, что о потенциальной надежности прибора судят по величине критерия отбраковки В, который определяется какA method for determining potentially unreliable bipolar transistors, namely, that bipolar transistors measure the low-frequency noise of the emitter-base (E-B) and collector-base (K-B) junctions at two operating currents, characterized in that the potential reliability of the device judged by the value of the rejection criterion B, which is defined as
Figure 00000001
,
Figure 00000001
, где I1, I2 - значения силы тока;where I 1 , I 2 - current strength;
Figure 00000002
,
Figure 00000003
- квадрат напряжения шума перехода Э-Б при силе тока соответственно для первого и второго значения;
Figure 00000002
,
Figure 00000003
- the square of the voltage of the noise transition E-B at a current strength, respectively, for the first and second values;
Figure 00000004
- квадрат напряжения шума перехода К-Б для второго значения силы тока, при этом критическое значение Вкр устанавливается экспериментально для каждого типа прибора.
Figure 00000004
- the square of the noise voltage of the K-B transition for the second value of the current strength, while the critical value of K cr is set experimentally for each type of device.
RU2005137463/28A 2005-12-01 2005-12-01 Method for detecting potentially unreliable bipolar transistors RU2309417C2 (en)

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RU2309417C2 RU2309417C2 (en) 2007-10-27

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Publication number Priority date Publication date Assignee Title
RU2465612C2 (en) * 2009-11-17 2012-10-27 Государственное образовательное учреждение высшего профессионального образования "Воронежский государственный технический университет" Method for comparative assessment of transistor batches by reliability
RU2602416C1 (en) * 2015-08-07 2016-11-20 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Московский государственный технический университет имени Н.Э. Баумана" (МГТУ им. Н.Э. Баумана) Method for determining resistance of microwave semiconductor devices to effect of ionizing radiations

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