RU2005119238A - METHOD FOR JOINING SILICON DIGITAL SILICON CRYSTAL CRYSTALS AND INTEGRAL CIRCUITS TO THE CASE WITH THE FORMATION OF SILICON-GOLD EUTECTICS - Google Patents

METHOD FOR JOINING SILICON DIGITAL SILICON CRYSTAL CRYSTALS AND INTEGRAL CIRCUITS TO THE CASE WITH THE FORMATION OF SILICON-GOLD EUTECTICS Download PDF

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Publication number
RU2005119238A
RU2005119238A RU2005119238/28A RU2005119238A RU2005119238A RU 2005119238 A RU2005119238 A RU 2005119238A RU 2005119238/28 A RU2005119238/28 A RU 2005119238/28A RU 2005119238 A RU2005119238 A RU 2005119238A RU 2005119238 A RU2005119238 A RU 2005119238A
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RU
Russia
Prior art keywords
silicon
formation
case
joining
digital
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RU2005119238/28A
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Russian (ru)
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RU2298252C2 (en
Inventor
Виктор Васильевич Зенин (RU)
Виктор Васильевич Зенин
гузов Александр Владимирович Р (RU)
Александр Владимирович Рягузов
Борис Анатольевич Спиридонов (RU)
Борис Анатольевич Спиридонов
Ольга Владимировна Хишко (RU)
Ольга Владимировна Хишко
Таиси Ивановна Шарапова (RU)
Таисия Ивановна Шарапова
Original Assignee
Государственное образовательное учреждение высшего профессионального образовани "Воронежский государственный технический университет" (RU)
Государственное образовательное учреждение высшего профессионального образования "Воронежский государственный технический университет"
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Application filed by Государственное образовательное учреждение высшего профессионального образовани "Воронежский государственный технический университет" (RU), Государственное образовательное учреждение высшего профессионального образования "Воронежский государственный технический университет" filed Critical Государственное образовательное учреждение высшего профессионального образовани "Воронежский государственный технический университет" (RU)
Priority to RU2005119238/28A priority Critical patent/RU2298252C2/en
Publication of RU2005119238A publication Critical patent/RU2005119238A/en
Application granted granted Critical
Publication of RU2298252C2 publication Critical patent/RU2298252C2/en

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  • Wire Bonding (AREA)
  • Die Bonding (AREA)

Claims (1)

Способ присоединения кристаллов кремниевых дискретных полупроводниковых приборов и интегральных схем к корпусу с образованием эвтектики кремний-золото, включающий размещение золотой фольги между кристаллом и основанием корпуса и соединение их пайкой, отличающийся тем, что фольгу перед пайкой отжигают в вакууме при температуре 160-250°С или в водороде в стандартных условиях.The method of attaching silicon crystals of discrete semiconductor devices and integrated circuits to the body with the formation of a silicon-gold eutectic, including the placement of a gold foil between the crystal and the base of the body and soldering them, characterized in that the foil is annealed before brazing in vacuum at a temperature of 160-250 ° C or in hydrogen under standard conditions.
RU2005119238/28A 2005-06-21 2005-06-21 Method for connecting chips of digital silicon semiconductor devices and integrated circuits to package to form silicon-gold eutectic RU2298252C2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
RU2005119238/28A RU2298252C2 (en) 2005-06-21 2005-06-21 Method for connecting chips of digital silicon semiconductor devices and integrated circuits to package to form silicon-gold eutectic

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU2005119238/28A RU2298252C2 (en) 2005-06-21 2005-06-21 Method for connecting chips of digital silicon semiconductor devices and integrated circuits to package to form silicon-gold eutectic

Publications (2)

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RU2005119238A true RU2005119238A (en) 2006-12-27
RU2298252C2 RU2298252C2 (en) 2007-04-27

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RU2005119238/28A RU2298252C2 (en) 2005-06-21 2005-06-21 Method for connecting chips of digital silicon semiconductor devices and integrated circuits to package to form silicon-gold eutectic

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2480860C2 (en) * 2009-12-31 2013-04-27 Государственное образовательное учреждение высшего профессионального образования "Воронежский государственный технический университет" System to attach semiconductor crystal to body base
RU2570226C1 (en) * 2014-08-05 2015-12-10 Открытое акционерное общество "Научно-исследовательский институт электронной техники" Method for silicone chips mounting to gold-plated surface
RU2737722C1 (en) * 2020-04-03 2020-12-02 Акционерное общество "ГРУППА КРЕМНИЙ ЭЛ" Semiconductor device manufacturing method

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RU2298252C2 (en) 2007-04-27

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MM4A The patent is invalid due to non-payment of fees

Effective date: 20070622