RU1812635C - Logical or gate - Google Patents

Abstract

Usage: the invention relates to logic devices that implement the function of selecting the maximum value of input variables / supplied to various inputs, and in digital technology can be used as an OR element. SUMMARY OF THE INVENTION: a device comprises n transistors, an emitter resistor, n base circuit resistors, n resistors. 4 il ..

Description

The invention relates to a pulse technique, to logic devices that implement the function of selecting the maximum value of input variables supplied to various inputs. In digital technology, the proposed device can be used as OR elements.

The purpose of the invention is the expansion of the dynamic range in the direction of low levels of input signals,

The technical essence of the proposal lies in the fact that in the proposed structure of the logic device, small currents flow through the collector pn junctions of transistors of the order of several tens of microamps, which leads to the appearance of the valve operating mode of the section of the collector-emitter transistor having current-voltage characteristics. starting at low voltages, on the order of several millivolts. This allows the work to be done.

 devices, starting from the low-voltage region, thereby significantly expanding the dynamic range.

In the proposed device, bipolar transistors are used not as amplifying elements, but as passive controlled non-linear elements.

The totality of the claimed features of the proposed device exhibits the property: the response threshold is expanded towards low levels of input signals due to the gate mode of high sensitivity of transistors used in the proposed device as passive controlled non-linear elements.

In the literature reviewed, the author did not find a totality of features similar to the property claimed, considers it and the property it is showing new. Each of these design features is necessary, but in the aggregate sufficient to obtain a positive effect in the form of expanded C

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nor dynamic range to the region of low levels of the input signal.

In FIG. 1 shows a diagram of the proposed device; in FIG. Figure 2 shows equivalent circuits of n-p-n-type transistors (Fig. 2 a) and p-ivp-type (Fig. 2 b); in FIG. Figure 3 shows equivalent circuit diagrams of collector-emitter sections of a p-p-p-tip transistor for various values of the control current through the base-collector junction; in FIG. Figure 4 shows the voltage – current characteristics of the collector – emitter transistor section taken at 50 μA at different ambient temperatures, which indicates the high thermal stability of this regime.

The OR logic shown in FIG. 1a, contains input circuits 1. 2, transistor cells 3 and A, each of which includes a transistor 5, a base resistor b, a resistor 7, a voltage source 8 connected through resistors 6 and 7 to the base-collector junctions. transistors 5, emitter resistor 9.

The device operates as follows. ...

From a voltage source 8 through resistors b to the base of transistors through collector p-n junctions and resistors 7, a current of several tens of microamps flows.

In this case, the gap of the emitter-collector transistor behaves as a non-linear element with one-sided conductivity (Fig. 2, 3) having a current-voltage characteristic emerging from the zero-voltage region (Fig. 4). In this case, the maximum voltage level from one of the inputs of the device passes to: the output and prevents the passage of voltage from other inputs.

A device may have more than two inputs. Transistors used in

device must have asymmetric pn junctions and can be either germanium or silicon.

The use of the proposed device for solving digital logic problems allows us to reduce the levels of signals used from several volts to several tens of millivolts, which reduces the power consumed by the device in solving technical problems by several orders of magnitude. In this case, the level of interference caused by the device during operation is also sharply reduced, which simplifies the conditions of electromagnetic compatibility in the equipment.

The proposed device can find application in analog devices for selecting the maximum voltage from n input signals, as well as in digital technology.

Claims (1)

The claims An OR device containing n transistors whose emitters are combined is the output of the device and connected to one output of the emitter a resistor, characterized in that, in order to expand the dynamic range of the input voltages towards small values, the transistor collectors are connected to the device inputs and through the resistors to the housing, the transistor bases are connected through the base resistors to the power source, and the second output of the emitter resistor is connected to the body. FIG 4 at s-short circuit (X 3 Uupr. 0 to o- -Ј uh e Uupr, 50mkhAZupr 0.3 / hA Fig.Z 0.2 0.4 0, $ at 40 Wx. Figure 4.