RU171416U1 - GENERATOR ON CMOS TRANSISTORS OF ULTRA-HIGH MANIPULATED FREQUENCY OF HARMONIOUS OSCILLATIONS - Google Patents

Abstract

A useful model of an oscillator based on CMOS transistors of ultrahigh frequency-manipulated oscillations relates to the field of radio engineering and can be used in radio transmitting devices, in measurement technology as a source of ultrahigh frequency-manipulated signals. The technical result of this utility model achieved is the expansion of the functionality of the generator of amplitude-manipulated harmonic signals on CMOS transistors, which consists in the generation of oscillations, is manipulated frequency generator.The generator contains three logic elements, five capacitors, a resistor, an n-MOS transistor with an induced channel, an external generator of control rectangular pulses. The generation of ultra-high frequency non-frequency-controlled electric oscillations in a CMOS transistor is similar in nature to the generation of high-frequency oscillations in a semiconductor material with electronic conductivity discovered in 1963 by Gann. Frequency manipulation occurs due to a change in the signal propagation time from the output of the second LE LE to the second input of the LE 2IL-NOT LE, arising as a result of sharp changes in the resistance of the feedback circuit in the generator.

Description

The utility model relates to the field of radio engineering and can be used in radio transmitting devices, in measuring equipment as a source of ultra-high frequency-manipulated oscillations. Ultra-high radio frequencies occupy the range of 0.3-3.0 (GHz) [1, p. 238].

The known structure of a common interpolation (heterodyne) device for implementing frequency manipulation (Fig. 1) [2, p. 438]. The device contains a quartz master oscillator (21) with a frequency of f _square , a so-called interpolation oscillator, a generator (22) with a frequency of generation f _d , a mixer (23) (frequency converter), a high-pass selective filter (24), a frequency manipulator (25) telegraph signal source (26). Oscillations with frequencies f _q and f _d are fed to a mixer (23) operating in a nonlinear mode. As a result, in the current spectrum of the mixer, in particular, combinational components of the form f _pr1 = f _sq -f _d and f _pr2 = f _sq + f _{d are formed} . One of the conversion frequencies is allocated by the filter (24) and is output to the device. Frequency manipulation is carried out using a reactive lamp (or reactive transistor, or diode), which (which) is switched on in parallel with the contour of the range master oscillator [2, p. 439]. It should be noted that the generators (21) and (22), the selective filter (24) contain inductances, so the device (Fig. 1) is completely unattractive for integral implementation. In addition, "a reaction lamp is controlled by a special electronic manipulator (Fig. 2) [2, p. 439]." It is energy-intensive, it cannot be implemented in an integrated version.

Closest to the claimed generator is a known generator of amplitude-manipulated harmonic signals on CMOS transistors [3]. It contains an external generator of control rectangular pulses, four CMOS transistors, four capacitors of constant capacitance. The block diagram of the generator of amplitude-manipulated harmonic signals on CMOS transistors [3] can be represented in the form of FIG. 3 - prototype.

The mechanism of converting the energy of the power source into the energy of variable amplified signals is explained by the “manifestation of negative differential conductivity in the volume of a semiconductor material having n-type conductivity when an electric field of a certain intensity is applied to it. In this case, a constant voltage U ₀ applied to a semiconductor sample of length L should create an electric field E ₀ in the range

which limits the falling section of the current-voltage characteristics (Fig. 4) [4, p. 31].

A generator of amplitude-manipulated harmonic signals on CMOS transistors is capable of generating harmonic oscillations in a wide (hundreds of MHz - GHz units) frequency range with a low coefficient of nonlinear distortion [table, [3]]. Moreover, the generation of high-frequency harmonic oscillations in the oscillator of amplitude-manipulated harmonic signals on CMOS transistors is inherently similar to the generation of high-frequency oscillations in a semiconductor material with electronic conductivity “detected by Hann” [5, p. 288].

The disadvantage of this known generator of amplitude-manipulated harmonic signals on CMOS transistors is that it cannot generate frequency-manipulated electrical oscillations.

The purpose of the claimed technical solution is to expand the functionality of the generator of amplitude-manipulated harmonic signals on CMOS transistors by improving its design.

The technical result achieved by the generator on CMOS transistors of ultrahigh-frequency-manipulated oscillations is to expand the functionality of the generator of amplitude-manipulated harmonic signals on CMOS transistors, which consists in the generation of harmonic oscillations, frequency-manipulated.

The claimed generator (Fig. 8) contains the logical elements performed on CMOS transistors: LE 2OR-NOT (2) {to simplify the presentation and improve the visibility of the construction of the claimed generator, the LE 2OR-NOT conclusions are additionally indicated: the first input is marked with the symbol "a" without quotes, the second input is marked with “b” without quotes, the output is marked with “c” without quotes}, the first LE is NOT (3), the second LE is NOT (4) {to simplify the presentation and improve the visibility of constructing the claimed generator, the output of LE is NOT (4) indicated the symbol "d" without quotes}, [type LE 2OR-NOT (2) in the declared generator the core is shown in FIG. 6], the inventive generator also contains constant capacitors: an isolation capacitor C _section (5), capacitors C1 (6), C2 (7), C3 (8), while the output (c) of LE 2OR-NOT (2) is connected to the first output of the capacitor C1 (6) and the input of the first LE LE (3), the output of the first LE LE (3) is connected to the first output of the capacitor C2 (7) and the input of the second LE NOT (4), the output (d) of the second LE NOT (4) ) is connected to the first terminals of the capacitor C3 (8) and the isolation capacitor C _section (5), the second terminals of the capacitors C1 (6), C2 (7), C3 (8) are connected to the common bus of the device power supply, the second the output of the capacitor C _section (5) is the output of a useful model of the inventive generator, and differs in that a unit (9) for changing the frequencies of the generated components in the frequency-manipulated output harmonic signal is introduced, the output (d) of the second LE NOT (4) is connected to the input block (9), the output of block (9) is connected to (b) the second input of the LE 2 OR NOT (2), the implementation of block (9) is shown in FIG. 7, it contains: an external generator (10) of rectangular control pulses, the potential output of which is connected to the gate of the nMOP transistor Q9 (11) with an induced channel, block (9) also contains a L-shaped RC filter consisting of elements: capacitor C5 (12 ), of resistor R1 (13), while the drain of transistor Q9 (11) is connected to (d) the output of the second LE LE (4), as well as to the first output of resistor R1 (13), the source of transistor Q9 (11) is connected to (b ) by the second input of LE 2OR-NOT (2), with the second output of resistor R1 (13) and the first output of capacitor C5 (12), the second output of capacitor C5 (12) is connected n devices to a common bus supply.

The combination of FIG. 5 and FIG. 7 gives a block diagram of a CMOS transistor of ultrahigh frequency-manipulated harmonic oscillations (FIG. 8).

The claimed generator operates as follows. “In 1963, Gann discovered the phenomenon of generating high-frequency oscillations of electric current in a semiconductor material with electronic electrical conductivity when a dc voltage is applied to the semiconductor material that exceeds a certain critical value. It turned out that the oscillation frequency depends on the length of the sample and lies in the range of several gigahertz ”[5, p. 288].

Turning on the power supply of the device leads to the fulfillment of condition (1) in the volume of a semiconductor material with an n-type channel conductivity nMOP of the transistor (Q1) (14) (Fig. 6) of the 2OR-NOT logic element (2) (Fig. 5). The implementation of condition (1) entails the appearance in the volume of a semiconductor material with n-type conductivity nMOP transistor (Q1) (14) (Fig. 6) of a mechanism for converting the energy of a power source into the energy of alternating electrical vibrations. The generated ultrahigh electrical oscillation, reaching the generator output, enters the input of the positive feedback circuit, consisting of the input resistance nMOP of the transistor (Q4) (15) (Fig. 6) of the second input (b) of the 2 OR-NOT logic element (2) (Fig. 5) and the equivalent resistance Z _equiv , which is formed by the elements (Fig. 8): the output capacitance C of the _{output of the} generator of rectangular manipulating pulses (10), the resistor R1 (13), the capacitor C5 (12), as well as the elements of the nMOP transistor (Q9) ( 11) [6, page 61.] C. _tightened - the gate capacitance C _gc - gate-drain capacitance, R _i - internal resistance, C _si - drain-source capacitance. The positive feedback circuit ensures that the phase balance and amplitude balance in the generator are fulfilled. As a result, the inventive generator implements a stationary mode of generation of ultra-high harmonic oscillations not manipulated in frequency.

The generation of electromagnetic waves under the influence of a strong electric field in a sample of a semiconductor material with electronic conductivity physically reflects the mechanism for converting the energy of the power source into the energy of alternating electrical vibrations in the volume of a semiconductor material with n-type conductivity. This phenomenon of the generation of electromagnetic waves is called the Gunn effect.

The Gunn effect is due to the fact that it periodically arises in a sample (semiconductor material with n-type conductivity), moves along it with a speed (v) close to the electron drift velocity outside the domain, and the region of a strong electric field, which is called the electric domain, disappears. If the field outside the domain exceeds E ₁ (1), then a new domain begins to form at the cathode, the current density decreases and the process repeats. “Usually, a domain is formed in the immediate vicinity of the cathode, since the concentration of inhomogeneities is greater near the contacts” [7, p. 73]. In this case, the "cathode" is the source of the nMOP transistor (Q1) (14) (Fig. 6) with the induced channel of the 2 OR-NOT logic element (2) (Fig. 6). “The domain arises due to the instability of the uniform distribution of the electric field during the manifestation of negative differential conductivity” [4, p. 34].

The generation in the inventive CMOS transistor of ultrahigh frequency-harmonic oscillations not manipulated by frequency is inherently similar to the generation of high-frequency oscillations in a semiconductor material with electronic conductivity "detected by Hann" [5, p. 288].

The mechanism of frequency manipulation (changing the frequency value) of generation is as follows. Under the action of voltage drops 1 → 0, 0 → 1 of the voltage of the control oscillator (10) applied to the gate of the nMOP transistor Q9 (11) with an induced channel, the channel resistance of this transistor changes sharply depending on the magnitude of the control voltage of the manipulating generator (10). The resistance nMOP of the transistor with the induced channel Q9 (11) “depending on the control voltage, can take two values: R _vT = R _us → 0 if VT is on, and R _vT = R _zap → ∞ if VT is off” [6, p. . 410]. This leads to a change in the equivalent resistance Z _{equiv of} block (9) (Fig. 5). The implementation of the unit for changing the frequency of the generated components in the frequency-manipulated output harmonic signal is shown in (Fig. 7). As a result, the transit time of the signal from the output (d) of the second LE LE (4) to (b) the second LE 2OR-NOT LE input (Fig. 5) changes, all this entails a change in the frequencies of the generated components in the output signal frequency-manipulated (Fig. 9). In particular, when a voltage equal to the logic zero level is supplied to the gate of the nMOP transistor with the induced channel Q9 (11), R _vT = R _zap → ∞. Therefore, the signal from the output of the second LE is NOT supplied to the second input of the LE 2 OR NOT with a delay due to the capacitor C5 (12) and the resistance R _equiv , which is formed by the parallel connection of the drain-source resistance of the closed transistor Q9 (11) R _vT = R _zap → ∞ and resistor R1 (13). The resistance value R _equiv in this case is close to the resistance value R1 (13). In this case, the frequency of generation of harmonic oscillations has a value of f ₁ . When the gate receives an nMOP transistor with an induced channel Q9 (11), a voltage equal to the level of a logical unit, R _vT = R _us → 0. Therefore, the signal from the output (d) of the second LE LE (4) practically without delay arrives at (b) the second input of the LE 2 OR NOT (2). A change (in this case, a decrease) in the signal propagation time from the output of the second LE LE (4) to the second input of the LE 2IL-NOT (2) LE entails a change (in this case, an increase) in the frequency of harmonic oscillations, which takes the value f ₂ . Thus, the generation frequencies f ₂ and f _{1 of the} output frequency-manipulated harmonic signal are in the ratio

Under the influence of voltage drops 1 → 0, 0 → 1 of the voltage of the manipulating generator (10) on the gate of a MOS transistor with an induced channel of n-type Q9 (11), the frequency of the generated oscillations by the claimed generator changes without breaking the phase of the generated signal.

A useful model of the generator was simulated on CMOS transistors of ultrahigh frequency-manipulated harmonic oscillations.

Three capacitors are directly responsible for the generation of ultra-high oscillations: C1 (6), C2 (7), C3 (8) and three logical elements: LE 2OR-NOT (2), the first LE NOT (3), the second LE NOT (4) (Fig. 5). The change of frequencies in the composition of the frequency-manipulated oscillation provides block 9 (Fig. 5). The vibration frequencies were varied by changing the capacitance values of the capacitors C1 (6), C2 (7), C3 (8), as well as by changing the equivalent resistance (Z _equiv ) of the positive feedback circuit of the claimed generator. In the logic element 2OR-NOT (2), the first LE NOT (3), the second LE NOT (4), CMOS transistors with induced channels are used, as the Q9 (11) transistor (Fig. 7) an nMOP induced-channel transistor is used. Channel parameters of MOS transistors: channel length l = 0.18u, channel width w = 0.22u. Accepted: With _section (5) = 0.1pF. The parameters of the generator (10) of rectangular pulses: frequency F = 3 MHz, duration 45%, voltage 4 V. To power the logic elements OR-NOT (2), NOT (3), NOT (4) of the claimed generator, implemented according to the block diagram ( Fig. 8), a Digital Power (VCC) source with a voltage of 5 V was used. Logical levels of the signal at the gate of the nMOP transistor Q9 (11), the values of the generation frequencies with variation, the values of the elements C1 (6), C2 (7), C3 ( 8), C5 (12), R1 (13). The capacitor values were specified in pF. The measurement results are shown in the table. The amplitude of the output voltage of the generation device was about 2.25 V.

The data obtained in the table allow us to conclude:

- the generation frequency with a voltage drop of 1 → 0 at the gate of the transistor Q9 (11) decreases. This is due to a sharp increase in the channel resistance of the nMOP transistor with an induced channel. Therefore, the equivalent resistance R _{equiv of the} parallel-connected resistor R1 and transistor Q9 (11) increases, becoming close in magnitude to the value of the resistance R1. All this leads to a decrease in the frequency of generation;

- an increase in the value of any of the capacitors (6), (7), (8), (12) leads to a decrease in the generation frequency. This is because an increase in the capacitance of the capacitor increases the time for transients (in particular, the charge and discharge of the capacitor) when the current passes through the capacitor. As a result, the generation frequency decreases. With a decrease in the capacitance of the capacitor for the same reason, the generation frequency increases;

- reducing the value of the resistor R1 of the L-shaped RC filter reduces the signal transit time from the input of the block (9) to (b) the second input of the LE 2 OR NOT (2) (Fig. 5). This leads to an increase in the generation frequency;

- a simultaneous change (for example, an increase) in the values of two elements, one of which is any capacitor (6), (7), (8), (12), and the second - resistor R1 (13), leads to a more significant change (in this in case of a decrease) in the generation frequency than when changing the value of only one of the above elements. This is due to a more dramatic change (in this case, an increase) in the signal transit time along the entire generator circuit.

Thus, it is possible to adjust the values of the generation frequencies f ₂ and f ₁ by changing the values of the capacitors C1, C2, C3, C5 and changing the resistance value of the resistor R1. In particular, when the voltage drops of the rectangular pulse generator V2 (10) 0 → 1 or 1 → 0, an increase in the value of the capacitor C1 reduces the generation frequency f ₂ and f ₁ (exp. No. 1, 2), an increase in the value of the capacitor C2 reduces the generation frequency f ₂ and f ₁ (exp. No. 3, 1), an increase in the value of the capacitor C3 reduces the generation frequency f ₂ and f ₁ (exp. No. 4, 1), an increase in the value of the capacitor C5 reduces the generation frequency f ₂ and f ₁ (exp No. 6, 1), an increase in the value of the resistor R1 reduces the generation frequencies f ₂ and f ₁ (exp. No. 2, 8), a simultaneous increase in the value of the resistor R1 and the value of any (or any) condensate (capacitors), for example, C1 (6), leads to more significant changes in the values of the generation frequencies f ₂ and f ₁ (exp. 1, 8).

A generator based on CMOS transistors of ultrahigh-frequency-manipulated harmonic oscillations can be implemented integrally in submicron technologies; it does not contain the classical ones characteristic of a generator with self-excitation frequency-selective systems. Providing a stationary mode of generation due to the introduction of positive feedback in the inventive generator.

Frequency manipulation of ultra-high harmonic signals generated without phase discontinuity with frequencies of harmonic components of the output oscillations with frequencies f ₂ and f ₁ , with f ₂ > f ₁ being realized with spasmodic changes, drops 0 → 1 and 1 → 0 of the control voltage from an external generator ( 10) rectangular control pulses entering the gate of the transistor Q9 (11), standing in the positive feedback circuit of the generator on CMOS transistors ultra-high frequency-manipulated oscillations. The time intervals of the duration of the voltage drops 1 → 0 and 0 → 1 are determined by the corresponding encoding of the transmitted information.

Thus, the claimed utility model provides wider functionality of the generator of amplitude-manipulated harmonic signals on CMOS transistors [3]. This consists in the generation of ultra-high harmonic oscillations, frequency-manipulated.

Information sources

1. Dictionary of amateur radio. Edited by L.P. Kraismera and V.P. Fortunately. The fifth edition, revised and supplemented. Leningrad: "Energy", Leningrad branch. 1979.- 398 p.

2. Pakhlavyan A.N. Radio transmitting devices. - M .: Communication, 1967 .-- 567 p.

3. Mushta A.I., Shekhovtsov D.V. Patent for utility model of the Russian Federation No. 158709. "Generator of amplitude-manipulated harmonic signals." Utility Model Priority April 29, 2015. Registered in the State Register of Utility Models of the Russian Federation October 26, 2015. Published on January 20, 2016 Bull. No. 2.

4. Efimov I.E. Microelectronics. Physical and technological fundamentals, reliability. / I.E. Efimov, Yu.I. Gorbunov, I.Ya. Trump. - M .: Higher. school 1977 .-- 416 p.

5. Efimov I.E. Microelectronics. Design, types of microcircuits, new directions. / I.E. Efimov, Yu.I. Gorbunov, I.Ya. Trump. - M .: Higher. school 1978.- 312 p.

6. Opadchiy Yu.F. Analog and digital electronics. / Yu.F. Opadchiy, O.P. Gludkin, A.I. Gurov. Ed. O.P. Gludkina. - M .: Radio and communication. 1996 .-- 768 p.

7. Ovechkin Yu.A. Semiconductor devices. / Yu.A. Ovechkin. - M .: Higher. school 1987 .-- 416 p.

Claims (1)

Generator on CMOS transistors of ultrahigh-frequency-manipulated harmonic oscillations, containing constant capacitors C _div , C1, C2, C3, made on CMOS transistors with induced channels logic elements (LE): LE 2 OR-NOT, first LE NOT, second LE NOT, the output of the LE 2 OR is NOT connected to the first output of the capacitor C1 and the input of the first LE LE, the output of the first LE is NOT connected to the first output of the capacitor C2 and the input of the second LE NOT, the output of the second LE is NOT connected to the first terminals of the capacitor C3 and the isolation capacitor C _Section, the second terminals C1 capacitors C2, C3 are connected to the common bus device power source, a second terminal of the capacitor C _section is an output of the generator for CMOS transistors ultrahigh manipulated frequency harmonic oscillations, characterized in that connected to the common bus of the device power source nMOS gate transistor Q1 (14) LE 2 OR NOT (2), the output of the second LE LE (4) is also connected to the drain of the nMOS transistor Q9 (11) with the induced channel and the first output of the resistor R1, the source of the nMOS transistor Q9 (11) is connected to the second input LE 2OR-NOT (2), as well as with the second output of the resistor R1 and the first output of the capacitor C5, the second output of the capacitor C5 and the nMOS substrate of the transistor Q9 (11) are connected to the device’s power supply common bus, the potential output of the rectangular control pulse generator (10) is connected to the gate of the nMOS transistor Q9 (11), turning on the power supply of the device leads to the realization of negative differential conductivity in the volume of the material with the electronic conductivity of the channel of the nMOS transistor with the grounded gate Q1 (14) of the 2I logic element AND-NOT (2), therefore, in the channel at the source of this nMOS transistor with a grounded gate arises, moves along the channel with a speed close to the electron drift velocity outside the domain and the region of a strong electric field disappears - an electric domain, the domain is formed in the immediate vicinity of the source due to a higher concentration of inhomogeneities near the contacts, the appearance of the domain is due to the instability of the uniform distribution of the electric field during the manifestation of negative differential conductivity of the semiconductor channel channel material, this generates in the semiconductor the generation of high-frequency oscillations not manipulated by the frequency of oscillation, which is similar in nature to the generation of high-frequency oscillations in a semiconductor material with electronic conductivity "detected by Hann", the generated high-frequency oscillation, reaching the generator output, goes to the input of the positive feedback circuit connection, consisting of the input resistance nMOS transistor Q4 (15) of the second input of the logic element 2 OR NOT (2), the capacitor C3 (8) and the equivalent ntnogo impedance Z _eq, comprising: an output capacitance C _O rectangular control pulses generator (10), a resistor R1, a capacitor C5, and also elements of nMOS transistor Q9 (11); the positive feedback circuit ensures the implementation of phase balance and amplitude balance in the generator, as a result, the generator implements a stationary mode of oscillation generation, with sudden changes, changes of 0 → 1 and 1 → 0 of the control voltage, a sequence of output frequency-manipulated harmonic components is generated without breaking the signal phase oscillations with frequencies f ₂ and f _1, respectively, with f ₂ > f ₁ , you can adjust the values of the generation frequencies f ₂ and f ₁ by changing the values of the capacitors C1, C2, C3, C5 and changing the value of the resistance of the resistor R1.

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