RU1499622C - Method of chemical-mechanical polishing of plate surfaces - Google Patents

Abstract

The invention relates to semiconductor technology and can be used in the chemical-mechanical polishing of wafers made of semiconductor and dielectric materials, such as gallium arsenide, indium, lithium niobate. The purpose of the invention is to improve the quality of the surface being machined and the performance of polishing. The method of chemical-mechanical polishing of the surfaces of the plates includes a separate supply of a polishing composition containing a polishing component, an etchant, a stabilizing additive, and a chemically active CO14POSITION to the polishing pad. As a chemically active composition, a solution of ethylenediaminetetraacetic acid or its salts is used. A 0.1-10.0% solution of disodium salt of ethylenediaminetetraacetic acid (trilon B) is used; the goal is achieved when the costs of the polishing composition and trilon B solution are taken at a volume ratio (1-20): 1 respectively. When processing the plates, it is possible to reduce the likelihood of interaction of the komsheksobrazuyuschego substance with the components of the polishing composition and to increase the effect of the polishing pad and {SI supplied to it components on the processed surface of the plates. 5 1 C.p. f-ls, 1 yl.

Description

The invention relates to semiconductor technology and can be used for chemical mechanical polishing (CMP) of wafers made of semiconductor and dielectric materials, such as gallium arsenide, indium phosphide, lithium niobate.

The aim of the invention is to improve the quality of the machined surface and the polishing performance.

The drawing shows a dosing schedule of the polishing composition and the chemically active composition in the processing zone of the plates.

Machined plates 2 are placed on the polishing pad 1, previously glued to the faceplate 3. The polishing composition is supplied from the container 4, the chemically active composition from the container 5.

The essence of the method lies in the fact that in the case of CMP njjacTHH, a polishing composition containing a polishing compound, an etchant, a stabilizing additive, and a chemically acti- vated n-itts are separately supplied.

YU

. 3. t / t99622 tsn (for the form of a solution of ethyleidiamimtet-Retoacetic acid (EDTL) or its salts. At the same time, the efficiency of nopedey solutions of complex%

cofiOH ia processes the first surface due to the reduced ability to use the complex with co-polishing compound polishing practically with both acidic and alkaline media. Hack, JQ, when using a 0.1-105 0% solution of a disodium salt of etch.enda- aNSHHTsrpiJiyKcycHott acid (trnloia B) p-staleine and the purpose of the processing was achieved. This occurs when the costs of polishing the composition of Trilom B solution N are taken at the corresponding volumes (1-20): 1, respectively.

When creating an opportunity oOpadoTi Mjra -. example ,, such as shown in n%,. ,,. .20 current, the indicated complexing agents have been shown to be versatile for various semiconductor and dielectric materials and have a combined effect on verification. 7.5. The lamellar nature of the plate, as a result of which U1 1 ceases, the rigidity of chemical bonds between surface atoms, which contributes to faster removal. The ratio increases. the rate of material trailing on the surface protrusions to the etching rate in the depressions due to an appreciable decrease in the diM ultrasound velocity through the film in suspensions inside the depressions, which is associated with much larger sizes of the conplexon molecules in comparison with other Active Components. This circumstance with GPO contributes to a faster and better exhalation. At the same time, the formation of oxides and hydroxide / C films on stoBP-pJ HocTn is suppressed due to tipe property imaging of solution-complex compounds with elements of the material being processed,

Examples 1-9 are as follows. . constant constant polishing

fifty

thirty

35

40

200 rpm g / cm2

Q

0 .5

.

0

0

5

0

55

tava

Polishing material

The amount of removal during polishing.

V „- 15- - 20 Ш1 / MIN

Suede Arts - On

(plates

preliminarily

Treated with a free abrasive with a grain size of 5 microns) 10-15 microns.

Example 1. For polishing plates of an indi-type phosphide of orientation (100), polishing is used5 (composition, per 1 liter of water in which 200 g of SiOj, 80% glycerol / 60 ml of a 30% solution of hydrogen peroxide are present, 100 ml of 25% - of an aqueous solution of ammrhak, A 0.1% solution of Trilon B is used as a more active composition, which is dosed: on a polisher in a volume of V. ,, 2 ml / min 5. ratio of the volume of polishing composition to the volume of solution -ora trilon B equal

After polishing, the removal rate and the surface quality are evaluated using a profilograph-profiloneter. The pick-up speed is W = 0.0.6 µm / min. Microroughness height hSOjOl μm.

EXAMPLE 2. To polish indium p-type phosphide plates of orientation (100), the same polishing composition as in Example 1 is used. An aqueous solution, co., Is used as a chemically active composition. holding on May 5 L Trilon B and 9 wt.% potassium hydroxide (V, 5 ml / min). Moreover, the ratio, W 0.8 NKM / U1N ,, h $ 0.02 μm

Example 3. Polishing p-1pR. (100) is carried out analogously to example 1, as a chemically active composition, a 0.5% solution of ZDTA is used. Processing Results: 10: 1. W - 0.1 μm / min, L 0.02 μm.

Example 4. For polishing n-GaAs - (lOd), a polishable composition is used in which 150 ml of SiO, 60 ml of glycerol are contained in 1 liter of water, 60 ml of a 30% solution of 40 ml of a 25% solution are used.

B. The plate processing zone is fed a 2% solution of Trilon B at a rate of V of 2-3 ml / min. results

5

Processing: 7: 1, W 1,5 1.5 μm / cue, h bO, 01 μm.

Example 5c Chemical

 g

mechanical full plasti. lithium niobate LiNbOjj (Z-slice). Use a polishable composition in which. 1 liter of water contains 250 g of SiOj ill. 00 g of ZfO., 100 ml of glycerin, 60 No. 1 of a 30% solution., 20 ml of a 25% -1% aqueous ammonia solution and 70 t-AOZ-Horo potassium hydroxide solution, B The processing zone of the plates serves a 10% solution of trilop B with a speed of VK t5-20 ml / min. The results | 5 of the processing: Vf,: V c "1: 1, W O, A. MKM / MI, 1) - $ 0.05 microns,

. Example 6. When polishing LiNbOj plates (Z-slice), the composition according to Example 5, 20 is used: the flow rate of a 1% solution of Tg-Shon E is V ,,, - 1 f-W / kin. Processing results:. „:: 3: 1, W - - 0.2 μm / min, h 0,, 02 μm.

For example, p-7, Polishing of a 25 gt gallium-gadolinium garnet (001) plastin is carried out analogously to Example 6 .. W. 0.2 μm / min, 03 μm, Example 8, When polished

80 np of glycerol, 60 ml of 10% -1% HjOj thief, 100 g 2. solution, 2 g of Trilon F and 1000 ml of water

Consumption of polishing compound V 20 ml / min. The removal rate W "0.05 μm / min,, 02 μm.

The efficiency of the method of hit-polishing mechanical polishing consists in increasing the productivity of processing when a high surface quality is achieved.

Claims (2)

1. A method of chemical-mechanical polishing of the surfaces of the plates, comprising separately feeding the polishing composition and the active aqueous composition to the polishing pad, exposing the polished composition of the polishing composition of the active aqueous composition to the surface of the plates, wherein, in order to improve the quality of the surface to be treated and ligation performance, a solution is used as an active aqueous composition n-InP (100) wafers polishing with ethylene diamine tetraacetic acid In addition, as shown in Example I, a 2% solution of Trilon T, V j, 1.5-2.0 ml / min. The processing results: V f,: V 10: 1, W 0.25 μm / min; , 01 μm.  PRI me R-9 (base object). When polishing n-InP (100) plates, a polishing compound is used, in which Trilon B is introduced. The polishing composition contains 200 g of SiO, 35 or its salts. 2. The method according to claim 1, with the fact that, as salt in the active aqueous composition, trylof B is used in an amount of 0.1-10 Mat;,% j, and feed to rotate the polishing pad of the polishing composition of the active aqueous composition is in volume ratio (1-20): 1, respectively.  . Q | 5 twenty 25 99622 80 np of glycerol, 60 ml of a 10% -I1 p solution of HjOj, 100 g of 2. solution, 2 g of Trilon F and 1000 ml of water. Consumption of polishing compound V 20 ml / min. The removal rate W "0.05 μm / min,, 02 μm. The effectiveness of the hitps mechanical polishing method is to increase the processing productivity while achieving a high surface quality, The claims "G .-7 1. A method of chemical-mechanical polishing of the surfaces of the plates, comprising separately supplying a polishing polisher to a rotating polisher. composition and active water composition, the impact on the surface of the wafers with a polishing pad, components of the polishing composition and active water composition, characterized in that, in order to improve the quality of the surface to be treated and the polishing performance, a solution is used as the active water composition ethylenediaminetetraacetic acid 5 or its salts. 2. The method according to claim 1, with the fact that, as salt in the active aqueous composition, trylof B is used in an amount of 0.1-10 Mat;,% j, and feed to rotate a polishing pad of a polishing composition and an active aqueous composition is carried out at a volume ratio of (1-20): 1, respectively.