RU1380309C - Installation for blowing chamber - Google Patents

Description

(46) 15.07 „93o Bksh ,, P 26

(21) 4023121/26

(22) P, 02.86

(72) V.N. Glushchenko, K.I. “Gordienko, G.I. Grischuk, V.AoZharikov and V.F.Kolesnikov

(56) Burger R., Donovan R. Fundamentals of silicon integrated circuit technology — oxidation, diffusion, eptaxi. M ,: Mir, 1969, cJ80-8I, fig. 4.15, s. 261-263, rice 7.4 „

(54) CAMERA PURGE DEVICE

(57) The invention relates to means for cleaning the reaction chambers (k) used for carrying out chemical and chemical processes, and provides an increase in the cleaning efficiency of the kit K “The device contains a pipe (p) with a reflector fixed in front of the outlet P. Reflector equipped with a lid located at the end of P. Apertures are made along the perimeter of the lid at an angle of 35-80 to the axis of P. The total cross-sectional area of the cover openings is equal to or less than the cross-sectional area of the outlet P. The distance between the openings krshki and E and between the wall K and not more than three times the diameter of the holes in the dust free chamber soglasno.izobreteniyu obtained Lodzatvornke dielectrics silica tol1 1inoy 7§0 A § 4-5 with a porosity of pore cm. I ill.

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 11380309

The invention relates to a microproduct and can be used when carrying out chemical and technical processes in reaction chambers

The aim of the invention is to increase the efficiency of cleaning steppes of primeval

The drawing shows a device, native section

The device consists of a gas supply pipe 1, equipped with a reflector 2 fixed in front of the water outlet 3 of the pipe 1, the reflector 2 is equipped with a cover 4, located at the end of the outlet 3 of the pipe 1 - About the perimeter of the cover 4, holes 5 are made at an angle of 35 80 ° to the axis of the pipe 1 The device is installed. With the possibility of axial movement in the chamber 20 6, having a pipe 7 for supplying gas. To remove the gas from the chamber 6, a clearance was made into the chamber in the end face of the chamber. 6 and a shutter 9 „The camera is equipped with iiarpeBaTenet 10

The total cross-sectional area of the hole 5 in the cover 4 is equal to or less than the cross-sectional area of the outlet 3 of the nozzle 1 “The distance between the holes 3 and between them and the wall of the chamber is no more than the tripled diameter of the hole 5, The arrow shows the direction of the gas streams -.

The device operates as follows.

In the intervals between the technological processes, the device is inserted into the chamber 6 Through the pipe 1 it is fed. a note provides 1) 1 lg of gas under excess pressure. BLACK: with pipe 7 B chamber 6 also serves green gas. The walls of the chambers, I 6 - are heated with a heater 10. Gas flow, outlet - D1n from holes 5, blows the walls of the chamber at an angle of 35 -80, which provides the) 1 most eGM lens to clean the walls of the NIP generated

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as a result of recrystallization of the walls of the chamber 6 during technological processes. It has been empirically established that the distance between the holes 5 and the gap to the walls of the chamber 6 should be at the level of no more than three times the diameter of the hole 5. Then, slowly pulling the device out of the chamber 6, blow it off and thus clean the walls of the chamber 6 from dust. At the outlet of the gas stream through the gap 8, the particles of the drink are carried away by reinforced exhaust ventilation

Carrying out in the chamber, dust-free using the invention, the process of obtaining a gate gas-insulated dielectric of silicon dioxide with a thickness of 750 L allows the oxide porosity to be reduced from 6-8 ppm / cm to 4-5 pores / cm - the remainder, the exact level of which is determined by the manufacturing process word about

Claims (1)

The claims Device for purging a chamber for chemical-thermal treatment of semiconductors, Containing a pipe for supplying gas, air mounted in the chamber and equipped with a reflector fixed in front of the outlet of the pipe, characterized the fact that, in order to increase the cleaning efficiency of the chamber walls, the reflector is equipped with a cover placed on the end of the inlet of the nozzle and having holes made along its perimeter at an angle of 35-80 to the axis of the nozzle, and the total cross-sectional area of the holes in the roof is equal to or less the cross-sectional area of the outlet of the nozzle, and the distance between the openings of the cover and between them and the wall of the chamber does not exceed three times the diameter of the hole.