RO60829A2 - - Google Patents
Info
- Publication number
- RO60829A2 RO60829A2 RO7689173A RO7689173A RO60829A2 RO 60829 A2 RO60829 A2 RO 60829A2 RO 7689173 A RO7689173 A RO 7689173A RO 7689173 A RO7689173 A RO 7689173A RO 60829 A2 RO60829 A2 RO 60829A2
- Authority
- RO
- Romania
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RO7689173A RO60829A2 (ro) | 1973-12-05 | 1973-12-05 | |
| DE19742452209 DE2452209C3 (de) | 1973-12-05 | 1974-11-04 | Metall-Halbleiterdiode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RO7689173A RO60829A2 (ro) | 1973-12-05 | 1973-12-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| RO60829A2 true RO60829A2 (ro) | 1976-08-15 |
Family
ID=20092997
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RO7689173A RO60829A2 (ro) | 1973-12-05 | 1973-12-05 |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE2452209C3 (ro) |
| RO (1) | RO60829A2 (ro) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2460040A1 (fr) * | 1979-06-22 | 1981-01-16 | Thomson Csf | Procede pour realiser une diode schottky a tenue en tension amelioree |
| DE3219598A1 (de) * | 1982-05-25 | 1983-12-01 | Siemens AG, 1000 Berlin und 8000 München | Schottky-leistungsdiode |
| JPS59232467A (ja) * | 1983-06-16 | 1984-12-27 | Toshiba Corp | ガ−ドリング付きシヨツトキ−バリヤ−ダイオ−ド |
-
1973
- 1973-12-05 RO RO7689173A patent/RO60829A2/ro unknown
-
1974
- 1974-11-04 DE DE19742452209 patent/DE2452209C3/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2452209C3 (de) | 1979-01-25 |
| DE2452209B2 (de) | 1978-05-24 |
| DE2452209A1 (de) | 1975-07-17 |