PT67479A - Dispositif pour coupler des transistors,operant suivant la technique i2l,a un transistor dont le courant de repos et regle sur une forte intensite - Google Patents

Dispositif pour coupler des transistors,operant suivant la technique i2l,a un transistor dont le courant de repos et regle sur une forte intensite

Info

Publication number
PT67479A
PT67479A PT67479A PT6747977A PT67479A PT 67479 A PT67479 A PT 67479A PT 67479 A PT67479 A PT 67479A PT 6747977 A PT6747977 A PT 6747977A PT 67479 A PT67479 A PT 67479A
Authority
PT
Portugal
Prior art keywords
rules
transistor
technique
high intensity
coupling transistors
Prior art date
Application number
PT67479A
Other languages
English (en)
French (fr)
Other versions
PT67479B (fr
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of PT67479A publication Critical patent/PT67479A/pt
Publication of PT67479B publication Critical patent/PT67479B/pt

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175Coupling arrangements; Interface arrangements
    • H03K19/018Coupling arrangements; Interface arrangements using bipolar transistors only
    • H03K19/01806Interface arrangements
    • H03K19/01818Interface arrangements for integrated injection logic (I2L)
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0214Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233Integrated injection logic structures [I2L]
    • H01L27/0244I2L structures integrated in combination with analog structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821Combination of lateral and vertical transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Processing Of Color Television Signals (AREA)
  • Electronic Switches (AREA)
PT67479A 1976-12-31 1977-12-29 Dispositif pour coupler des transistors operant suivant latechnique i2l a un transistor dont le courant de repos et regle sur une forte intensite PT67479B (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7614610A NL7614610A (nl) 1976-12-31 1976-12-31 Inrichting voor het koppelen van in i2l techniek bedreven transistoren met een op hogere rust- stroom ingestelde transistor.

Publications (2)

Publication Number Publication Date
PT67479A true PT67479A (fr) 1978-01-01
PT67479B PT67479B (fr) 1979-05-30

Family

ID=19827474

Family Applications (1)

Application Number Title Priority Date Filing Date
PT67479A PT67479B (fr) 1976-12-31 1977-12-29 Dispositif pour coupler des transistors operant suivant latechnique i2l a un transistor dont le courant de repos et regle sur une forte intensite

Country Status (11)

Country Link
US (1) US4158146A (pt)
JP (1) JPS5385183A (pt)
AU (1) AU505794B2 (pt)
CA (1) CA1091308A (pt)
DE (1) DE2756535C2 (pt)
ES (1) ES465557A1 (pt)
FR (1) FR2376516A1 (pt)
GB (1) GB1548118A (pt)
MX (1) MX144142A (pt)
NL (1) NL7614610A (pt)
PT (1) PT67479B (pt)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4348600A (en) * 1978-02-14 1982-09-07 Motorola, Inc. Controlled current source for I2 L to analog interfaces
JPS55145363A (en) * 1979-04-27 1980-11-12 Toshiba Corp Semiconductor device
JPS5761336A (en) * 1980-09-30 1982-04-13 Toshiba Corp Output protection circuit of integrated injection logical circuit
US4412142A (en) * 1980-12-24 1983-10-25 General Electric Company Integrated circuit incorporating low voltage and high voltage semiconductor devices
JPS5852870A (ja) * 1981-09-25 1983-03-29 Hitachi Ltd 半導体集積回路装置
DE3640276A1 (de) * 1986-11-25 1988-06-09 Telefunken Electronic Gmbh Digital-analogwandler

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE337851B (pt) * 1970-10-27 1971-08-23 Ericsson Telefon Ab L M
NL7107040A (pt) * 1971-05-22 1972-11-24
FR2244262B1 (pt) * 1973-09-13 1978-09-29 Radiotechnique Compelec
DE2450408A1 (de) * 1974-10-23 1976-04-29 Siemens Ag Schaltungsanordnung in einer komplementaer-chl-technik
NL7414273A (nl) * 1974-11-01 1976-05-04 Philips Nv Logische schakeling.
US4053923A (en) * 1976-09-23 1977-10-11 Motorola, Inc. Integrated logic elements with improved speed-power characteristics

Also Published As

Publication number Publication date
JPS5385183A (en) 1978-07-27
DE2756535A1 (de) 1978-07-06
AU505794B2 (en) 1979-11-29
MX144142A (es) 1981-08-31
JPS5517490B2 (pt) 1980-05-12
PT67479B (fr) 1979-05-30
ES465557A1 (es) 1978-10-01
AU3208377A (en) 1979-07-05
CA1091308A (en) 1980-12-09
US4158146A (en) 1979-06-12
FR2376516A1 (fr) 1978-07-28
DE2756535C2 (de) 1985-06-13
NL7614610A (nl) 1978-07-04
GB1548118A (en) 1979-07-04
FR2376516B1 (pt) 1983-11-18

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