PT3408865T - Suporte de componente compreendendo câmaras de contacto para um dispositivo optoeletrónico - Google Patents

Suporte de componente compreendendo câmaras de contacto para um dispositivo optoeletrónico

Info

Publication number
PT3408865T
PT3408865T PT177072303T PT17707230T PT3408865T PT 3408865 T PT3408865 T PT 3408865T PT 177072303 T PT177072303 T PT 177072303T PT 17707230 T PT17707230 T PT 17707230T PT 3408865 T PT3408865 T PT 3408865T
Authority
PT
Portugal
Prior art keywords
component carrier
contact chambers
optoelectronic apparatus
optoelectronic
chambers
Prior art date
Application number
PT177072303T
Other languages
English (en)
Original Assignee
Vishay Semiconductor Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vishay Semiconductor Gmbh filed Critical Vishay Semiconductor Gmbh
Publication of PT3408865T publication Critical patent/PT3408865T/pt

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/02002Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0203Containers; Encapsulations, e.g. encapsulation of photodiodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0232Optical elements or arrangements associated with the device
    • H01L31/02325Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0232Optical elements or arrangements associated with the device
    • H01L31/02327Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Led Device Packages (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Switches Operated By Changes In Physical Conditions (AREA)
PT177072303T 2016-02-23 2017-02-22 Suporte de componente compreendendo câmaras de contacto para um dispositivo optoeletrónico PT3408865T (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102016103136.4A DE102016103136A1 (de) 2016-02-23 2016-02-23 Optoelektronische Vorrichtung

Publications (1)

Publication Number Publication Date
PT3408865T true PT3408865T (pt) 2022-02-16

Family

ID=58162553

Family Applications (1)

Application Number Title Priority Date Filing Date
PT177072303T PT3408865T (pt) 2016-02-23 2017-02-22 Suporte de componente compreendendo câmaras de contacto para um dispositivo optoeletrónico

Country Status (14)

Country Link
US (1) US10923605B2 (pt)
EP (1) EP3408865B1 (pt)
JP (1) JP7036747B2 (pt)
KR (1) KR102644801B1 (pt)
CN (1) CN108701723B (pt)
DE (1) DE102016103136A1 (pt)
DK (1) DK3408865T3 (pt)
ES (1) ES2906256T3 (pt)
HU (1) HUE057669T2 (pt)
IL (1) IL261305B (pt)
PL (1) PL3408865T3 (pt)
PT (1) PT3408865T (pt)
TW (1) TWI742044B (pt)
WO (1) WO2017144538A1 (pt)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7319088B2 (ja) * 2019-05-27 2023-08-01 スタンレー電気株式会社 受発光装置

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4972089A (en) * 1989-04-03 1990-11-20 Motorola Inc. Single package electro-optic transmitter-receiver
JP3261280B2 (ja) * 1994-09-08 2002-02-25 シャープ株式会社 反射型フォトインタラプタおよびその製造方法
US6020632A (en) * 1997-02-26 2000-02-01 Motorola, Inc. Electronic component including an adjustable cap
US6764158B2 (en) 2001-10-02 2004-07-20 Hewlett-Packard Development Company, L.P. Compact optical sensing system
JP3862723B2 (ja) * 2002-10-25 2006-12-27 森山産業株式会社 発光モジュール
JP2004200593A (ja) * 2002-12-20 2004-07-15 Sharp Corp 反射形フォトインタラプタ及びそれを用いた電子機器
JP2005169689A (ja) * 2003-12-08 2005-06-30 Canon Inc 液体残量検出システムおよびその容器
DE102004040218B4 (de) * 2004-08-19 2008-04-17 Diehl Bgt Defence Gmbh & Co. Kg Annäherungssensoranordnung
US7652244B2 (en) * 2004-10-05 2010-01-26 Finisar Corporation Combined laser transmitter and photodetector receiver package
JP4902114B2 (ja) 2004-12-16 2012-03-21 日亜化学工業株式会社 発光装置
US8052303B2 (en) * 2006-09-12 2011-11-08 Huizhou Light Engine Ltd. Integrally formed single piece light emitting diode light wire and uses thereof
JP5185683B2 (ja) * 2008-04-24 2013-04-17 パナソニック株式会社 Ledモジュールの製造方法および照明器具の製造方法
US8089140B2 (en) * 2008-09-25 2012-01-03 Silitek Electronic (Guangzhou) Co., Ltd. Lead frame assembly, lead frame and insulating housing combination, and led module having the same
TWI485878B (zh) 2009-04-01 2015-05-21 Lite On Technology Corp 形成發光二極體之透鏡結構之方法及其相關架構
EP3214662B1 (en) 2010-01-29 2018-09-26 Japan Aviation Electronics Industry, Ltd. Light-emitting apparatus
MY155671A (en) * 2010-01-29 2015-11-13 Toshiba Kk LED package and method for manufacturing same
TWI415309B (zh) 2010-03-31 2013-11-11 Lingsen Precision Ind Ltd Preform Molded Polycrystalline Bearing Modules with Lead Frame Type
KR101543333B1 (ko) 2010-04-23 2015-08-11 삼성전자주식회사 발광소자 패키지용 리드 프레임, 발광소자 패키지, 및 발광소자 패키지를 채용한 조명장치
KR101064036B1 (ko) * 2010-06-01 2011-09-08 엘지이노텍 주식회사 발광 소자 패키지 및 조명 시스템
US8492720B2 (en) * 2010-06-08 2013-07-23 Avago Technologies General Ip (Singapore) Pte. Ltd. Small low-profile optical proximity sensor
US8937377B2 (en) * 2010-10-08 2015-01-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Package-on-package proximity sensor module
JP2012248742A (ja) 2011-05-30 2012-12-13 Sharp Corp 光結合装置、光結合装置の製造方法および光結合装置を備える産業機器
KR20130045687A (ko) * 2011-10-26 2013-05-06 엘지이노텍 주식회사 발광 장치 및 이를 구비한 조명 장치
US8587103B2 (en) * 2011-10-27 2013-11-19 Lite-On Singapore Pte. Ltd. Integrated sensing package structure
US10224352B2 (en) 2012-04-23 2019-03-05 Raytron Co., Ltd. Integral optical sensor package
DE102012109183A1 (de) 2012-09-27 2014-03-27 Osram Opto Semiconductors Gmbh Optoelektronische Vorrichtung
JP5943882B2 (ja) 2013-07-26 2016-07-05 京セラドキュメントソリューションズ株式会社 トナー量検知センサー
DE102014117879A1 (de) * 2014-12-04 2016-06-09 Osram Opto Semiconductors Gmbh Pulsoxymetrie-Vorrichtung und Verfahren zum Betreiben einer Pulsoxymetrie-Vorrichtung
US9752925B2 (en) * 2015-02-13 2017-09-05 Taiwan Biophotonic Corporation Optical sensor

Also Published As

Publication number Publication date
KR102644801B1 (ko) 2024-03-07
CN108701723B (zh) 2022-03-01
EP3408865A1 (de) 2018-12-05
IL261305B (en) 2021-09-30
US10923605B2 (en) 2021-02-16
ES2906256T3 (es) 2022-04-13
JP2019508907A (ja) 2019-03-28
PL3408865T3 (pl) 2022-05-30
DK3408865T3 (da) 2022-03-21
EP3408865B1 (de) 2022-01-26
TW201803134A (zh) 2018-01-16
KR20180115316A (ko) 2018-10-22
WO2017144538A1 (de) 2017-08-31
IL261305A (en) 2018-10-31
TWI742044B (zh) 2021-10-11
HUE057669T2 (hu) 2022-06-28
JP7036747B2 (ja) 2022-03-15
DE102016103136A1 (de) 2017-08-24
CN108701723A (zh) 2018-10-23
US20190067494A1 (en) 2019-02-28

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