PT3408865T - Suporte de componente compreendendo câmaras de contacto para um dispositivo optoeletrónico - Google Patents
Suporte de componente compreendendo câmaras de contacto para um dispositivo optoeletrónicoInfo
- Publication number
- PT3408865T PT3408865T PT177072303T PT17707230T PT3408865T PT 3408865 T PT3408865 T PT 3408865T PT 177072303 T PT177072303 T PT 177072303T PT 17707230 T PT17707230 T PT 17707230T PT 3408865 T PT3408865 T PT 3408865T
- Authority
- PT
- Portugal
- Prior art keywords
- component carrier
- contact chambers
- optoelectronic apparatus
- optoelectronic
- chambers
- Prior art date
Links
- 230000005693 optoelectronics Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Led Device Packages (AREA)
- Optical Couplings Of Light Guides (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Switches Operated By Changes In Physical Conditions (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102016103136.4A DE102016103136A1 (de) | 2016-02-23 | 2016-02-23 | Optoelektronische Vorrichtung |
Publications (1)
Publication Number | Publication Date |
---|---|
PT3408865T true PT3408865T (pt) | 2022-02-16 |
Family
ID=58162553
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PT177072303T PT3408865T (pt) | 2016-02-23 | 2017-02-22 | Suporte de componente compreendendo câmaras de contacto para um dispositivo optoeletrónico |
Country Status (14)
Country | Link |
---|---|
US (1) | US10923605B2 (pt) |
EP (1) | EP3408865B1 (pt) |
JP (1) | JP7036747B2 (pt) |
KR (1) | KR102644801B1 (pt) |
CN (1) | CN108701723B (pt) |
DE (1) | DE102016103136A1 (pt) |
DK (1) | DK3408865T3 (pt) |
ES (1) | ES2906256T3 (pt) |
HU (1) | HUE057669T2 (pt) |
IL (1) | IL261305B (pt) |
PL (1) | PL3408865T3 (pt) |
PT (1) | PT3408865T (pt) |
TW (1) | TWI742044B (pt) |
WO (1) | WO2017144538A1 (pt) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7319088B2 (ja) * | 2019-05-27 | 2023-08-01 | スタンレー電気株式会社 | 受発光装置 |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4972089A (en) * | 1989-04-03 | 1990-11-20 | Motorola Inc. | Single package electro-optic transmitter-receiver |
JP3261280B2 (ja) * | 1994-09-08 | 2002-02-25 | シャープ株式会社 | 反射型フォトインタラプタおよびその製造方法 |
US6020632A (en) * | 1997-02-26 | 2000-02-01 | Motorola, Inc. | Electronic component including an adjustable cap |
US6764158B2 (en) | 2001-10-02 | 2004-07-20 | Hewlett-Packard Development Company, L.P. | Compact optical sensing system |
JP3862723B2 (ja) * | 2002-10-25 | 2006-12-27 | 森山産業株式会社 | 発光モジュール |
JP2004200593A (ja) * | 2002-12-20 | 2004-07-15 | Sharp Corp | 反射形フォトインタラプタ及びそれを用いた電子機器 |
JP2005169689A (ja) * | 2003-12-08 | 2005-06-30 | Canon Inc | 液体残量検出システムおよびその容器 |
DE102004040218B4 (de) * | 2004-08-19 | 2008-04-17 | Diehl Bgt Defence Gmbh & Co. Kg | Annäherungssensoranordnung |
US7652244B2 (en) * | 2004-10-05 | 2010-01-26 | Finisar Corporation | Combined laser transmitter and photodetector receiver package |
JP4902114B2 (ja) | 2004-12-16 | 2012-03-21 | 日亜化学工業株式会社 | 発光装置 |
US8052303B2 (en) * | 2006-09-12 | 2011-11-08 | Huizhou Light Engine Ltd. | Integrally formed single piece light emitting diode light wire and uses thereof |
JP5185683B2 (ja) * | 2008-04-24 | 2013-04-17 | パナソニック株式会社 | Ledモジュールの製造方法および照明器具の製造方法 |
US8089140B2 (en) * | 2008-09-25 | 2012-01-03 | Silitek Electronic (Guangzhou) Co., Ltd. | Lead frame assembly, lead frame and insulating housing combination, and led module having the same |
TWI485878B (zh) | 2009-04-01 | 2015-05-21 | Lite On Technology Corp | 形成發光二極體之透鏡結構之方法及其相關架構 |
EP3214662B1 (en) | 2010-01-29 | 2018-09-26 | Japan Aviation Electronics Industry, Ltd. | Light-emitting apparatus |
MY155671A (en) * | 2010-01-29 | 2015-11-13 | Toshiba Kk | LED package and method for manufacturing same |
TWI415309B (zh) | 2010-03-31 | 2013-11-11 | Lingsen Precision Ind Ltd | Preform Molded Polycrystalline Bearing Modules with Lead Frame Type |
KR101543333B1 (ko) | 2010-04-23 | 2015-08-11 | 삼성전자주식회사 | 발광소자 패키지용 리드 프레임, 발광소자 패키지, 및 발광소자 패키지를 채용한 조명장치 |
KR101064036B1 (ko) * | 2010-06-01 | 2011-09-08 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 조명 시스템 |
US8492720B2 (en) * | 2010-06-08 | 2013-07-23 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Small low-profile optical proximity sensor |
US8937377B2 (en) * | 2010-10-08 | 2015-01-20 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Package-on-package proximity sensor module |
JP2012248742A (ja) | 2011-05-30 | 2012-12-13 | Sharp Corp | 光結合装置、光結合装置の製造方法および光結合装置を備える産業機器 |
KR20130045687A (ko) * | 2011-10-26 | 2013-05-06 | 엘지이노텍 주식회사 | 발광 장치 및 이를 구비한 조명 장치 |
US8587103B2 (en) * | 2011-10-27 | 2013-11-19 | Lite-On Singapore Pte. Ltd. | Integrated sensing package structure |
US10224352B2 (en) | 2012-04-23 | 2019-03-05 | Raytron Co., Ltd. | Integral optical sensor package |
DE102012109183A1 (de) | 2012-09-27 | 2014-03-27 | Osram Opto Semiconductors Gmbh | Optoelektronische Vorrichtung |
JP5943882B2 (ja) | 2013-07-26 | 2016-07-05 | 京セラドキュメントソリューションズ株式会社 | トナー量検知センサー |
DE102014117879A1 (de) * | 2014-12-04 | 2016-06-09 | Osram Opto Semiconductors Gmbh | Pulsoxymetrie-Vorrichtung und Verfahren zum Betreiben einer Pulsoxymetrie-Vorrichtung |
US9752925B2 (en) * | 2015-02-13 | 2017-09-05 | Taiwan Biophotonic Corporation | Optical sensor |
-
2016
- 2016-02-23 DE DE102016103136.4A patent/DE102016103136A1/de not_active Withdrawn
-
2017
- 2017-02-22 PL PL17707230T patent/PL3408865T3/pl unknown
- 2017-02-22 PT PT177072303T patent/PT3408865T/pt unknown
- 2017-02-22 CN CN201780009670.1A patent/CN108701723B/zh active Active
- 2017-02-22 DK DK17707230.3T patent/DK3408865T3/da active
- 2017-02-22 WO PCT/EP2017/054075 patent/WO2017144538A1/de active Application Filing
- 2017-02-22 EP EP17707230.3A patent/EP3408865B1/de active Active
- 2017-02-22 KR KR1020187027520A patent/KR102644801B1/ko active IP Right Grant
- 2017-02-22 US US16/078,507 patent/US10923605B2/en active Active
- 2017-02-22 ES ES17707230T patent/ES2906256T3/es active Active
- 2017-02-22 HU HUE17707230A patent/HUE057669T2/hu unknown
- 2017-02-22 TW TW106105897A patent/TWI742044B/zh active
- 2017-02-22 JP JP2018562717A patent/JP7036747B2/ja active Active
-
2018
- 2018-08-22 IL IL261305A patent/IL261305B/en unknown
Also Published As
Publication number | Publication date |
---|---|
KR102644801B1 (ko) | 2024-03-07 |
CN108701723B (zh) | 2022-03-01 |
EP3408865A1 (de) | 2018-12-05 |
IL261305B (en) | 2021-09-30 |
US10923605B2 (en) | 2021-02-16 |
ES2906256T3 (es) | 2022-04-13 |
JP2019508907A (ja) | 2019-03-28 |
PL3408865T3 (pl) | 2022-05-30 |
DK3408865T3 (da) | 2022-03-21 |
EP3408865B1 (de) | 2022-01-26 |
TW201803134A (zh) | 2018-01-16 |
KR20180115316A (ko) | 2018-10-22 |
WO2017144538A1 (de) | 2017-08-31 |
IL261305A (en) | 2018-10-31 |
TWI742044B (zh) | 2021-10-11 |
HUE057669T2 (hu) | 2022-06-28 |
JP7036747B2 (ja) | 2022-03-15 |
DE102016103136A1 (de) | 2017-08-24 |
CN108701723A (zh) | 2018-10-23 |
US20190067494A1 (en) | 2019-02-28 |
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