PL53969B1 - - Google Patents
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- Publication number
- PL53969B1 PL53969B1 PL114804A PL11480466A PL53969B1 PL 53969 B1 PL53969 B1 PL 53969B1 PL 114804 A PL114804 A PL 114804A PL 11480466 A PL11480466 A PL 11480466A PL 53969 B1 PL53969 B1 PL 53969B1
- Authority
- PL
- Poland
- Prior art keywords
- alloy
- modifier
- base
- silicon
- alloy according
- Prior art date
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- 239000000956 alloy Substances 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 3
- 239000003607 modifier Substances 0.000 claims 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 229910052787 antimony Inorganic materials 0.000 claims 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Description
Stop dy- fundujac do obszaru bazy obniza czas zycia nos¬ ników pradu, co jest w przypadku technologii diod szybkich procesem celowym.Stop ten ma drobnoziarnista i jednorodna strukture. W atmosferze redukujacej dobrze zwilza i roztwarza molibden bedacy podstawo¬ wym materialem stosowanym na odprowadzenie elektrody bazy w diodzie krzemowej. Równiez dobrze sie lutuje z cyna oraz po zatopieniu do krzemu nie powoduje powstawania duzych na¬ prezen mechanicznych. Ponadto daje sie latwo obrabiac plastycznie. PL
Claims (3)
- Zastrzezenia patentowe 1. Stop do wytwarzania kontaktu omowego bazy przyrzadów pólprzewodnikowych o szybkim dzialaniu, w szczególnosci diod krzemowych, znamienny tym, ze zawiera 20—30% Cu, 78— 68°/o Ag oraz 2% modyfikatora. 5396953969 3
- 2. Stop wedlug zastrz. 1 znamienny tym, ze mo¬ dyfikatorem jest pierwiastek donorowy (na przyklad antymon) lub akceptorowy (na przy¬ klad gal). 4
- 3. Stop wedlug zastrz. 1—2, znamienny tym, ze modyfikator zawiera dodatek pierwiastka na przyklad germanu, ograniczajacego roztwa- rzalnosc krzemu przez stop bazy. PZG w Pab., zam. 828-67, nakl. 400 egz. PL
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PL53969B1 true PL53969B1 (pl) | 1967-08-25 |
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