PL435019A1 - Complex semiconductor structure - Google Patents

Complex semiconductor structure

Info

Publication number
PL435019A1
PL435019A1 PL435019A PL43501918A PL435019A1 PL 435019 A1 PL435019 A1 PL 435019A1 PL 435019 A PL435019 A PL 435019A PL 43501918 A PL43501918 A PL 43501918A PL 435019 A1 PL435019 A1 PL 435019A1
Authority
PL
Poland
Prior art keywords
semiconductor structure
complex semiconductor
substrate
epitaxial layers
active
Prior art date
Application number
PL435019A
Other languages
Polish (pl)
Other versions
PL241027B1 (en
Inventor
Marek Ekielski
Maciej Kamiński
Artur Trajnerowicz
Andrzej Taube
Original Assignee
Sieć Badawcza Łukasiewicz - Instytut Technologii Elektronowej
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sieć Badawcza Łukasiewicz - Instytut Technologii Elektronowej filed Critical Sieć Badawcza Łukasiewicz - Instytut Technologii Elektronowej
Priority to PL435019A priority Critical patent/PL241027B1/en
Publication of PL435019A1 publication Critical patent/PL435019A1/en
Publication of PL241027B1 publication Critical patent/PL241027B1/en

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Thin Film Transistor (AREA)

Abstract

Przedmiotem wynalazku jest złożona struktura półprzewodnikowa, zwłaszcza struktura tranzystora mocy. Struktura posiada podłoże, w postaci objętościowego monokrystalicznego azotku galu, które pokryte jest na jednej ze stron warstwami epitaksjalnymi. W strukturze tej przez podłoże (1), i przez warstwy epitaksjalne (2) przechodzi co najmniej jeden otwór przelotowy. Na powierzchni warstwy epitaksjalnej (2) może znajdować się element aktywny (3), element bierny, ścieżka przewodząca (4) lub układ elektroniczny złożony z wielu elementów aktywnych i biernych połączonych ścieżkami przewodzącymi.The invention relates to a complex semiconductor structure, in particular a power transistor structure. The structure has a substrate in the form of bulk monocrystalline gallium nitride, which is covered on one side with epitaxial layers. In this structure, at least one through-hole passes through the substrate (1) and through the epitaxial layers (2). On the surface of the epitaxial layer (2) there may be an active element (3), a passive element, a conducting track (4) or an electronic circuit composed of a number of active and passive elements connected by conducting tracks.

PL435019A 2018-03-09 2018-03-09 Complex semiconductor structure PL241027B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PL435019A PL241027B1 (en) 2018-03-09 2018-03-09 Complex semiconductor structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL435019A PL241027B1 (en) 2018-03-09 2018-03-09 Complex semiconductor structure

Publications (2)

Publication Number Publication Date
PL435019A1 true PL435019A1 (en) 2021-04-06
PL241027B1 PL241027B1 (en) 2022-07-18

Family

ID=75297942

Family Applications (1)

Application Number Title Priority Date Filing Date
PL435019A PL241027B1 (en) 2018-03-09 2018-03-09 Complex semiconductor structure

Country Status (1)

Country Link
PL (1) PL241027B1 (en)

Also Published As

Publication number Publication date
PL241027B1 (en) 2022-07-18

Similar Documents

Publication Publication Date Title
Clark et al. High temperature silicon carbide CMOS integrated circuits
Ryu et al. Digital CMOS IC's in 6H-SiC operating on a 5-V power supply
PH12022553613A1 (en) INTEGRATED CIRCUITS (ICs) EMPLOYING FRONT SIDE (FS) BACK END-OF-LINE (BEOL) INPUT/OUTPUT (I/O) ROUTING AND BACK SIDE (BS) BEOL (BS-BEOL) POWER ROUTING FOR CURRENT FLOW ORGANIZATION, AND RELATED METHODS
Young et al. High temperature digital and analogue integrated circuits in silicon carbide
TWI256072B (en) Semiconductor integrated circuits with stacked node contact structures and methods of fabricating such devices
Kashyap et al. Silicon carbide integrated circuits for extreme environments
ATE434840T1 (en) INTEGRATED PASSIVE COMPONENTS PRODUCED BY USING MULTI-LAYER ORGANIC LAMINATES
TW200611389A (en) Integrated circuit package device and method for manufacturing the same
BR112014018350A8 (en) SEMICONDUCTOR ARRANGEMENT WITH ACTIVE DRIFT ZONE
EP4155281A4 (en) ASSEMBLED BODY, CERAMIC COPPER CIRCUIT SUBSTRATE AND SEMICONDUCTOR DEVICE
EP4568466A3 (en) Low footprint resonator in flip chip geometry
SG10201804909VA (en) Chip structure including heating element
MY152270A (en) Methods and systems for packaging integrated circuits with integrated passive components
Kato et al. 250° C-Operated sandwich-structured all-SiC power module
SG10201805590VA (en) Semiconductor devices
Chu et al. High-performance GaN-on-diamond HEMTs fabricated by low-temperature device transfer process
WO2018191047A3 (en) Complementary metal oxide semiconductor (mos) (cmos) standard cell circuits employing metal lines in a first metal layer used for routing, and related methods
US20160036434A1 (en) Semiconductor integrated circuit device
PL435019A1 (en) Complex semiconductor structure
SG10201807506VA (en) Semiconductor Devices With Bent Portions
MY201277A (en) Extended stiffener for platform miniaturization
MY167837A (en) Integrated circuit film and method of manufacturing the same
Schmid et al. High temperature performance of NMOS integrated inverters and ring oscillators in 6H-SiC
MY201132A (en) Flexible shield for semiconductor devices and methods
CN104810406A (en) Silicon-on-insulator radio frequency switching device structure