PL4289008T3 - Detektor podczerwieni ulepszony poprzez inżynierię masy efektywnej nośników ładunków - Google Patents

Detektor podczerwieni ulepszony poprzez inżynierię masy efektywnej nośników ładunków

Info

Publication number
PL4289008T3
PL4289008T3 PL22706740.2T PL22706740T PL4289008T3 PL 4289008 T3 PL4289008 T3 PL 4289008T3 PL 22706740 T PL22706740 T PL 22706740T PL 4289008 T3 PL4289008 T3 PL 4289008T3
Authority
PL
Poland
Prior art keywords
charge carriers
infrared detector
effective mass
improved via
via engineering
Prior art date
Application number
PL22706740.2T
Other languages
English (en)
Inventor
Axel EVIRGEN
Jean-Luc Reverchon
Virgnie TRINITE
Original Assignee
Lynred
Commissariat à l'Energie Atomique et aux Energies Alternatives
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lynred, Commissariat à l'Energie Atomique et aux Energies Alternatives filed Critical Lynred
Publication of PL4289008T3 publication Critical patent/PL4289008T3/pl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2215—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
PL22706740.2T 2021-02-05 2022-02-01 Detektor podczerwieni ulepszony poprzez inżynierię masy efektywnej nośników ładunków PL4289008T3 (pl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2101135A FR3119710B1 (fr) 2021-02-05 2021-02-05 Détecteur infrarouge amélioré via l'ingénierie de la masse effective des porteurs de charges.
PCT/EP2022/052347 WO2022167419A2 (fr) 2021-02-05 2022-02-01 Detecteur infrarouge ameliore via l'ingenierie de la masse effective des porteurs de charges

Publications (1)

Publication Number Publication Date
PL4289008T3 true PL4289008T3 (pl) 2025-05-05

Family

ID=75953975

Family Applications (1)

Application Number Title Priority Date Filing Date
PL22706740.2T PL4289008T3 (pl) 2021-02-05 2022-02-01 Detektor podczerwieni ulepszony poprzez inżynierię masy efektywnej nośników ładunków

Country Status (7)

Country Link
US (1) US12272718B2 (pl)
EP (1) EP4289008B1 (pl)
KR (1) KR20230137438A (pl)
FR (1) FR3119710B1 (pl)
IL (1) IL304678B1 (pl)
PL (1) PL4289008T3 (pl)
WO (1) WO2022167419A2 (pl)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3141283A1 (fr) * 2022-10-20 2024-04-26 Thales Procédé de fabrication de photodiodes à hétérojonctions durcies aux irradiations

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03174790A (ja) * 1989-09-26 1991-07-29 Fujitsu Ltd 光半導体素子
JPH06151940A (ja) * 1992-11-12 1994-05-31 Nec Corp 半導体受光素子
JPH08160472A (ja) * 1994-12-09 1996-06-21 Fujikura Ltd 歪多重量子井戸型光偏向素子
US6812495B2 (en) * 2002-06-19 2004-11-02 Massachusetts Institute Of Technology Ge photodetectors
IL156744A (en) 2003-07-02 2011-02-28 Semi Conductor Devices An Elbit Systems Rafael Partnership Depletion-less photodiode with suppressed dark current
FR3053836B1 (fr) 2016-07-08 2019-07-05 Thales Detecteur de rayonnement et omageur associe

Also Published As

Publication number Publication date
IL304678A (en) 2023-09-01
WO2022167419A2 (fr) 2022-08-11
US12272718B2 (en) 2025-04-08
EP4289008A2 (fr) 2023-12-13
US20240136384A1 (en) 2024-04-25
KR20230137438A (ko) 2023-10-04
FR3119710A1 (fr) 2022-08-12
EP4289008B1 (fr) 2025-03-26
WO2022167419A3 (fr) 2022-11-10
IL304678B1 (en) 2026-04-01
EP4289008C0 (fr) 2025-03-26
US20240234473A9 (en) 2024-07-11
FR3119710B1 (fr) 2023-04-28

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