PL4239694T3 - Hybrydowa dioda elektroluminescencyjna i sposób jej wytwarzania - Google Patents

Hybrydowa dioda elektroluminescencyjna i sposób jej wytwarzania

Info

Publication number
PL4239694T3
PL4239694T3 PL23152548.6T PL23152548T PL4239694T3 PL 4239694 T3 PL4239694 T3 PL 4239694T3 PL 23152548 T PL23152548 T PL 23152548T PL 4239694 T3 PL4239694 T3 PL 4239694T3
Authority
PL
Poland
Prior art keywords
manufacturing
light emitting
same
emitting diode
hybrid light
Prior art date
Application number
PL23152548.6T
Other languages
English (en)
Inventor
Czesław Skierbiszewski
Julia SLAWINSKA
Mikołaj Chlipała
Marcin Siekacz
Kacper ORESZCZUK
Aleksander RODEK
Piotr KOSSACKI
Original Assignee
Instytut Wysokich Ciśnień Polskiej Akademii Nauk
Uniwersytet Warszawski
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Instytut Wysokich Ciśnień Polskiej Akademii Nauk, Uniwersytet Warszawski filed Critical Instytut Wysokich Ciśnień Polskiej Akademii Nauk
Publication of PL4239694T3 publication Critical patent/PL4239694T3/pl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
    • H10D62/864—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
PL23152548.6T 2022-02-26 2023-01-19 Hybrydowa dioda elektroluminescencyjna i sposób jej wytwarzania PL4239694T3 (pl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL440480A PL440480A1 (pl) 2022-02-26 2022-02-26 Hybrydowa dioda elektroluminescencyjna emitująca pojedyncze fotony i sposób wytwarzania hybrydowej diody elektroluminescencyjnej emitującej pojedyncze fotony

Publications (1)

Publication Number Publication Date
PL4239694T3 true PL4239694T3 (pl) 2025-03-31

Family

ID=85571287

Family Applications (2)

Application Number Title Priority Date Filing Date
PL440480A PL440480A1 (pl) 2022-02-26 2022-02-26 Hybrydowa dioda elektroluminescencyjna emitująca pojedyncze fotony i sposób wytwarzania hybrydowej diody elektroluminescencyjnej emitującej pojedyncze fotony
PL23152548.6T PL4239694T3 (pl) 2022-02-26 2023-01-19 Hybrydowa dioda elektroluminescencyjna i sposób jej wytwarzania

Family Applications Before (1)

Application Number Title Priority Date Filing Date
PL440480A PL440480A1 (pl) 2022-02-26 2022-02-26 Hybrydowa dioda elektroluminescencyjna emitująca pojedyncze fotony i sposób wytwarzania hybrydowej diody elektroluminescencyjnej emitującej pojedyncze fotony

Country Status (2)

Country Link
EP (1) EP4239694B1 (pl)
PL (2) PL440480A1 (pl)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN120882185B (zh) * 2025-09-26 2025-12-09 微玖(苏州)光电科技有限公司 一种基于隧道结的高性能红光Micro LED外延结构及制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010014177A1 (de) * 2010-04-01 2011-10-06 Jenoptik Polymer Systems Gmbh Oberflächenemittierende Halbleiter-Leuchtdiode
US10431956B2 (en) * 2015-07-14 2019-10-01 International Business Machines Corporation Nanocavity monolayer laser monolithically integrated with LED pump
CN111261764B (zh) * 2020-01-22 2021-10-15 山西穿越光电科技有限责任公司 一种蓝光/红光双色led芯片封装结构及制备方法

Also Published As

Publication number Publication date
EP4239694B1 (en) 2024-09-25
EP4239694A1 (en) 2023-09-06
PL440480A1 (pl) 2023-08-28
EP4239694C0 (en) 2024-09-25

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