PL4175079T3 - Sposób wytwarzania obszaru o regularnie zmiennym współczynniku załamania światła w warstwowej strukturze półprzewodnikowej - Google Patents

Sposób wytwarzania obszaru o regularnie zmiennym współczynniku załamania światła w warstwowej strukturze półprzewodnikowej

Info

Publication number
PL4175079T3
PL4175079T3 PL22461628.4T PL22461628T PL4175079T3 PL 4175079 T3 PL4175079 T3 PL 4175079T3 PL 22461628 T PL22461628 T PL 22461628T PL 4175079 T3 PL4175079 T3 PL 4175079T3
Authority
PL
Poland
Prior art keywords
regulary
fabrication
region
refractive index
semiconductor structure
Prior art date
Application number
PL22461628.4T
Other languages
English (en)
Inventor
Marta SAWICKA
Grzegorz Muzioł
Natalia FIUCZEK
Mateusz HAJDEL
Czesław Skierbiszewski
Original Assignee
Instytut Wysokich Ciśnień Polskiej Akademii Nauk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Instytut Wysokich Ciśnień Polskiej Akademii Nauk filed Critical Instytut Wysokich Ciśnień Polskiej Akademii Nauk
Publication of PL4175079T3 publication Critical patent/PL4175079T3/pl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1231—Grating growth or overgrowth details
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1861—Reflection gratings characterised by their structure, e.g. step profile, contours of substrate or grooves, pitch variations, materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/61—Electrolytic etching
    • H10P50/617—Electrolytic etching of Group III-V materials

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
PL22461628.4T 2021-10-30 2022-10-30 Sposób wytwarzania obszaru o regularnie zmiennym współczynniku załamania światła w warstwowej strukturze półprzewodnikowej PL4175079T3 (pl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL439368A PL439368A1 (pl) 2021-10-30 2021-10-30 Sposób wytwarzania obszaru o regularnie zmiennym współczynniku załamania światła w wybranej warstwie warstwowej struktury półprzewodnikowej

Publications (1)

Publication Number Publication Date
PL4175079T3 true PL4175079T3 (pl) 2025-12-15

Family

ID=84785385

Family Applications (2)

Application Number Title Priority Date Filing Date
PL439368A PL439368A1 (pl) 2021-10-30 2021-10-30 Sposób wytwarzania obszaru o regularnie zmiennym współczynniku załamania światła w wybranej warstwie warstwowej struktury półprzewodnikowej
PL22461628.4T PL4175079T3 (pl) 2021-10-30 2022-10-30 Sposób wytwarzania obszaru o regularnie zmiennym współczynniku załamania światła w warstwowej strukturze półprzewodnikowej

Family Applications Before (1)

Application Number Title Priority Date Filing Date
PL439368A PL439368A1 (pl) 2021-10-30 2021-10-30 Sposób wytwarzania obszaru o regularnie zmiennym współczynniku załamania światła w wybranej warstwie warstwowej struktury półprzewodnikowej

Country Status (2)

Country Link
EP (1) EP4175079B1 (pl)
PL (2) PL439368A1 (pl)

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2486251A1 (fr) * 1980-07-03 1982-01-08 Commissariat Energie Atomique Procede de realisation d'un reseau optique
US4777148A (en) 1985-01-30 1988-10-11 Massachusetts Institute Of Technology Process for making a mesa GaInAsP/InP distributed feedback laser
US4722092A (en) 1985-01-30 1988-01-26 Massachusetts Institute Of Technology GaInAsP/InP distributed feedback laser
DE29815522U1 (de) 1998-08-31 1998-12-03 Forchel, Alfred, Prof. Dr., 97074 Würzburg Halbleiterlaser mit Gitterstruktur
CA2254275C (en) * 1998-11-20 2007-06-26 Patrik Schmuki Selective electrochemical process for creating semiconductor nano- and micro-patterns
EP1094345A1 (en) 1999-10-19 2001-04-25 BRITISH TELECOMMUNICATIONS public limited company Method of making a photonic band gap structure
US6365428B1 (en) 2000-06-15 2002-04-02 Sandia Corporation Embedded high-contrast distributed grating structures
US6649439B1 (en) 2002-08-01 2003-11-18 Northrop Grumman Corporation Semiconductor-air gap grating fabrication using a sacrificial layer process
US8823057B2 (en) 2006-11-06 2014-09-02 Cree, Inc. Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices
CN102782818B (zh) 2010-01-27 2016-04-27 耶鲁大学 用于GaN装置的基于导电性的选择性蚀刻和其应用
US9583353B2 (en) 2012-06-28 2017-02-28 Yale University Lateral electrochemical etching of III-nitride materials for microfabrication
US11137536B2 (en) * 2018-07-26 2021-10-05 Facebook Technologies, Llc Bragg-like gratings on high refractive index material
PL3767762T3 (pl) 2019-07-14 2022-12-12 Instytut Wysokich Ciśnień Polskiej Akademii Nauk Dioda laserowa z rozłożonym sprzężeniem zwrotnym i sposób wytwarzania takiej diody
WO2021150304A1 (en) * 2020-01-23 2021-07-29 Yale University Stacked high contrast gratings and methods of making and using thereof

Also Published As

Publication number Publication date
EP4175079B1 (en) 2025-09-10
PL439368A1 (pl) 2023-05-02
EP4175079C0 (en) 2025-09-10
EP4175079A1 (en) 2023-05-03

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