PL417119A1 - Current sensor with the semiconductor measuring element, preferably in the application for inbuilding into an integrated circuit - Google Patents
Current sensor with the semiconductor measuring element, preferably in the application for inbuilding into an integrated circuitInfo
- Publication number
- PL417119A1 PL417119A1 PL417119A PL41711916A PL417119A1 PL 417119 A1 PL417119 A1 PL 417119A1 PL 417119 A PL417119 A PL 417119A PL 41711916 A PL41711916 A PL 41711916A PL 417119 A1 PL417119 A1 PL 417119A1
- Authority
- PL
- Poland
- Prior art keywords
- transistor
- current
- current sensor
- inbuilding
- application
- Prior art date
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Measurement Of Current Or Voltage (AREA)
Abstract
Przedmiotem wynalazku jest czujnik prądu, w którym główny prąd w obwodzie mierzonym przepływa przez tranzystor. Do pomiaru wykorzystuje się prąd bazy tranzystora (1) proporcjonalny do prądu płynącego przez ten tranzystor w ten sposób, że w podobnym, symetrycznym układzie zbudowanym na identycznym tranzystorze wywoływany jest wielokrotnie mniejszy prąd. Prąd kolektora tranzystora obwodu symetrycznego jest tyle razy mniejszy od prądu kolektora tranzystora pomiarowego, ile razy większa jest wartość rezystora w obwodzie bazy tranzystora symetrycznego od rezystora w obwodzie bazy tranzystora pomiarowego.The subject of the invention is a current sensor in which the main current in the measured circuit flows through the transistor. The measurement uses the base current of the transistor (1) proportional to the current flowing through the transistor in such a way that a similarly symmetrical arrangement built on an identical transistor produces a much smaller current. The collector current of the symmetrical circuit transistor is as many times smaller than the collector current of the measuring transistor as much as the value of the resistor in the symmetrical transistor base is greater than the resistor in the base of the measuring transistor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PL417119A PL229623B1 (en) | 2016-05-05 | 2016-05-05 | Current sensor with the semiconductor measuring element, preferably in the application for inbuilding into an integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PL417119A PL229623B1 (en) | 2016-05-05 | 2016-05-05 | Current sensor with the semiconductor measuring element, preferably in the application for inbuilding into an integrated circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
PL417119A1 true PL417119A1 (en) | 2017-02-27 |
PL229623B1 PL229623B1 (en) | 2018-08-31 |
Family
ID=58092024
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PL417119A PL229623B1 (en) | 2016-05-05 | 2016-05-05 | Current sensor with the semiconductor measuring element, preferably in the application for inbuilding into an integrated circuit |
Country Status (1)
Country | Link |
---|---|
PL (1) | PL229623B1 (en) |
-
2016
- 2016-05-05 PL PL417119A patent/PL229623B1/en unknown
Also Published As
Publication number | Publication date |
---|---|
PL229623B1 (en) | 2018-08-31 |
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