PL417119A1 - Current sensor with the semiconductor measuring element, preferably in the application for inbuilding into an integrated circuit - Google Patents

Current sensor with the semiconductor measuring element, preferably in the application for inbuilding into an integrated circuit

Info

Publication number
PL417119A1
PL417119A1 PL417119A PL41711916A PL417119A1 PL 417119 A1 PL417119 A1 PL 417119A1 PL 417119 A PL417119 A PL 417119A PL 41711916 A PL41711916 A PL 41711916A PL 417119 A1 PL417119 A1 PL 417119A1
Authority
PL
Poland
Prior art keywords
transistor
current
current sensor
inbuilding
application
Prior art date
Application number
PL417119A
Other languages
Polish (pl)
Other versions
PL229623B1 (en
Inventor
Andrzej Podlaszewski
Original Assignee
Andrzej Podlaszewski
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Andrzej Podlaszewski filed Critical Andrzej Podlaszewski
Priority to PL417119A priority Critical patent/PL229623B1/en
Publication of PL417119A1 publication Critical patent/PL417119A1/en
Publication of PL229623B1 publication Critical patent/PL229623B1/en

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  • Semiconductor Integrated Circuits (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Measurement Of Current Or Voltage (AREA)

Abstract

Przedmiotem wynalazku jest czujnik prądu, w którym główny prąd w obwodzie mierzonym przepływa przez tranzystor. Do pomiaru wykorzystuje się prąd bazy tranzystora (1) proporcjonalny do prądu płynącego przez ten tranzystor w ten sposób, że w podobnym, symetrycznym układzie zbudowanym na identycznym tranzystorze wywoływany jest wielokrotnie mniejszy prąd. Prąd kolektora tranzystora obwodu symetrycznego jest tyle razy mniejszy od prądu kolektora tranzystora pomiarowego, ile razy większa jest wartość rezystora w obwodzie bazy tranzystora symetrycznego od rezystora w obwodzie bazy tranzystora pomiarowego.The subject of the invention is a current sensor in which the main current in the measured circuit flows through the transistor. The measurement uses the base current of the transistor (1) proportional to the current flowing through the transistor in such a way that a similarly symmetrical arrangement built on an identical transistor produces a much smaller current. The collector current of the symmetrical circuit transistor is as many times smaller than the collector current of the measuring transistor as much as the value of the resistor in the symmetrical transistor base is greater than the resistor in the base of the measuring transistor.

PL417119A 2016-05-05 2016-05-05 Current sensor with the semiconductor measuring element, preferably in the application for inbuilding into an integrated circuit PL229623B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PL417119A PL229623B1 (en) 2016-05-05 2016-05-05 Current sensor with the semiconductor measuring element, preferably in the application for inbuilding into an integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL417119A PL229623B1 (en) 2016-05-05 2016-05-05 Current sensor with the semiconductor measuring element, preferably in the application for inbuilding into an integrated circuit

Publications (2)

Publication Number Publication Date
PL417119A1 true PL417119A1 (en) 2017-02-27
PL229623B1 PL229623B1 (en) 2018-08-31

Family

ID=58092024

Family Applications (1)

Application Number Title Priority Date Filing Date
PL417119A PL229623B1 (en) 2016-05-05 2016-05-05 Current sensor with the semiconductor measuring element, preferably in the application for inbuilding into an integrated circuit

Country Status (1)

Country Link
PL (1) PL229623B1 (en)

Also Published As

Publication number Publication date
PL229623B1 (en) 2018-08-31

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