PL396428A1 - Method for producing nanowires from palladium silicide - Google Patents
Method for producing nanowires from palladium silicideInfo
- Publication number
- PL396428A1 PL396428A1 PL396428A PL39642811A PL396428A1 PL 396428 A1 PL396428 A1 PL 396428A1 PL 396428 A PL396428 A PL 396428A PL 39642811 A PL39642811 A PL 39642811A PL 396428 A1 PL396428 A1 PL 396428A1
- Authority
- PL
- Poland
- Prior art keywords
- palladium
- temperature
- exceeding
- substrate
- layer
- Prior art date
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising silicides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
- H01L2221/1068—Formation and after-treatment of conductors
- H01L2221/1094—Conducting structures comprising nanotubes or nanowires
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Silicon Compounds (AREA)
Abstract
Sposób wytwarzania, nanodrutów z krzemku palladu polega na tym, że w I etapie w procesie fizycznego odparowania w próżni prekursorów warstwy wyjściowej: fullerenu C60 i octanu palladu na podłoże Si nanosi się kompozytową warstwę węglowo-palladową zawierającą w matrycy węglowej nanoziarna Pd. Następnie w II etapie warstwę kompozytową modyfikuje się w procesie chemicznego osadzania z par, przy czym czynnikami modyfikującymi są ksylen i temperatura. W wyniku modyfikacji na podłożu Si w ograniczonych obszarach wyrastają nanodruty z krzemku palladu, które następnie separuje się poprzez wypalanie matrycy węglowej w powietrzu. Temperatura wypalania matrycy węglowej nie przekracza 750°C. Proces fizycznego odparowania w próżni prowadzi się w warunkach dynamicznej próżni o wartości co najmniej ~10-5 tor, z temperaturą podłoża Si nie przekraczającą 110°C z zastosowaniem dwóch oddzielnych źródeł dla prekursorów warstwy: fullerenu C60 i octanu palladu PdC4H6O. Proces chemicznego osadzania z par prowadzi się w ciśnieniu atmosferycznym i w przepływie argonu jako gazu nośnego dla par ksylenu z temperaturą modyfikacji nie przekraczającą 700°C i czasem trwania nie przekraczającym 60 minut.The method of producing palladium silicide nanowires consists in the fact that in the first stage, in the process of physical evaporation in a vacuum of the precursors of the starting layer: fullerene C60 and palladium acetate, a composite carbon-palladium layer containing Pd nanograins in a carbon matrix is deposited on the Si substrate. Then, in the second stage, the composite layer is modified in the process of chemical vapor deposition, with the modifying factors being xylene and temperature. As a result of modifications on the Si substrate, palladium silicide nanowires grow in limited areas, which are then separated by burning the carbon matrix in air. The carbon matrix firing temperature does not exceed 750°C. The process of physical evaporation in a vacuum is carried out in a dynamic vacuum of at least ~10-5 Torr, with the Si substrate temperature not exceeding 110°C, using two separate sources for the layer precursors: fullerene C60 and palladium acetate PdC4H6O. The chemical vapor deposition process is carried out at atmospheric pressure and in a flow of argon as the carrier gas for xylene vapor with a modification temperature not exceeding 700°C and a duration not exceeding 60 minutes.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PL396428A PL219413B1 (en) | 2011-09-26 | 2011-09-26 | Method for producing nanowires from palladium silicide |
PCT/PL2012/050031 WO2013048270A1 (en) | 2011-09-26 | 2012-09-23 | Method for forming palladium silicide nanowires |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PL396428A PL219413B1 (en) | 2011-09-26 | 2011-09-26 | Method for producing nanowires from palladium silicide |
Publications (2)
Publication Number | Publication Date |
---|---|
PL396428A1 true PL396428A1 (en) | 2013-04-02 |
PL219413B1 PL219413B1 (en) | 2015-04-30 |
Family
ID=47143248
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PL396428A PL219413B1 (en) | 2011-09-26 | 2011-09-26 | Method for producing nanowires from palladium silicide |
Country Status (2)
Country | Link |
---|---|
PL (1) | PL219413B1 (en) |
WO (1) | WO2013048270A1 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9613859B2 (en) | 2015-01-09 | 2017-04-04 | Applied Materials, Inc. | Direct deposition of nickel silicide nanowire |
US10016752B1 (en) * | 2017-09-25 | 2018-07-10 | King Saud University | Method of making palladium nanoparticles |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5776832A (en) | 1980-10-31 | 1982-05-14 | Toshiba Corp | Method for forming palladium silicide |
US4687537A (en) | 1986-04-15 | 1987-08-18 | Rca Corporation | Epitaxial metal silicide layers |
US5624867A (en) | 1995-05-24 | 1997-04-29 | National Science Council | Low temperature formation of palladium silicided shallow junctions using implant through metal/silicide technology |
US6376342B1 (en) | 2000-09-27 | 2002-04-23 | Vanguard International Semiconductor Corporation | Method of forming a metal silicide layer on a source/drain region of a MOSFET device |
US6534402B1 (en) | 2001-11-01 | 2003-03-18 | Winbond Electronics Corp. | Method of fabricating self-aligned silicide |
US20070221993A1 (en) | 2006-03-27 | 2007-09-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for making a thermally stable silicide |
US7803707B2 (en) * | 2006-08-17 | 2010-09-28 | Wisconsin Alumni Research Foundation | Metal silicide nanowires and methods for their production |
US20080315430A1 (en) * | 2007-06-22 | 2008-12-25 | Qimonda Ag | Nanowire vias |
KR100883531B1 (en) | 2007-10-24 | 2009-02-12 | 한국기계연구원 | The field emission with silicide nanowires and the device fabrication method |
-
2011
- 2011-09-26 PL PL396428A patent/PL219413B1/en unknown
-
2012
- 2012-09-23 WO PCT/PL2012/050031 patent/WO2013048270A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2013048270A1 (en) | 2013-04-04 |
PL219413B1 (en) | 2015-04-30 |
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