PL385048A1 - Method of production the magnesium doped epitaxial layer of InxAlyGa1-x-yN of type p conductivity, for which )0 x 0,2 and 0 y 0,3 and multilayer semiconductor structures containing such epitaxial layer - Google Patents

Method of production the magnesium doped epitaxial layer of InxAlyGa1-x-yN of type p conductivity, for which )0 x 0,2 and 0 y 0,3 and multilayer semiconductor structures containing such epitaxial layer

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Publication number
PL385048A1
PL385048A1 PL385048A PL38504808A PL385048A1 PL 385048 A1 PL385048 A1 PL 385048A1 PL 385048 A PL385048 A PL 385048A PL 38504808 A PL38504808 A PL 38504808A PL 385048 A1 PL385048 A1 PL 385048A1
Authority
PL
Poland
Prior art keywords
epitaxial layer
inxalyga1
conductivity
production
type
Prior art date
Application number
PL385048A
Other languages
Polish (pl)
Inventor
Elżbieta Litwin-Staszewska
Tadeusz Suski
Piotr Perlin
Szymon Grzanka
Robert Czernecki
Lesław Dmowski
Marcin Kryśko
Michał Leszczyński
Ryszard Piotrzkowski
Izabella Grzegory
Bolesław Łucznik
Paweł Prystawko
Sylwester Porowski
Original Assignee
Topgan Spółka Z Ograniczoną Odpowiedzialnością
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Topgan Spółka Z Ograniczoną Odpowiedzialnością filed Critical Topgan Spółka Z Ograniczoną Odpowiedzialnością
Priority to PL385048A priority Critical patent/PL385048A1/en
Priority to PCT/PL2009/050007 priority patent/WO2009139654A1/en
Publication of PL385048A1 publication Critical patent/PL385048A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02389—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
    • H01S5/3063—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping using Mg
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H01S5/320275—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth semi-polar orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
PL385048A 2008-04-28 2008-04-28 Method of production the magnesium doped epitaxial layer of InxAlyGa1-x-yN of type p conductivity, for which )0 x 0,2 and 0 y 0,3 and multilayer semiconductor structures containing such epitaxial layer PL385048A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PL385048A PL385048A1 (en) 2008-04-28 2008-04-28 Method of production the magnesium doped epitaxial layer of InxAlyGa1-x-yN of type p conductivity, for which )0 x 0,2 and 0 y 0,3 and multilayer semiconductor structures containing such epitaxial layer
PCT/PL2009/050007 WO2009139654A1 (en) 2008-04-28 2009-04-27 METHOD OF MANUFACTURING OF MAGNESIUM DOPED InxAlyGa1-x-yN EPITAXIAL LAYER OF p-TYPE CONDUCTIVITY AND MANUFACTURING OF MULTILAYER SEMICONDUCTOR STRUCTURES COMPRISING SUCH LAYER

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL385048A PL385048A1 (en) 2008-04-28 2008-04-28 Method of production the magnesium doped epitaxial layer of InxAlyGa1-x-yN of type p conductivity, for which )0 x 0,2 and 0 y 0,3 and multilayer semiconductor structures containing such epitaxial layer

Publications (1)

Publication Number Publication Date
PL385048A1 true PL385048A1 (en) 2009-11-09

Family

ID=40933853

Family Applications (1)

Application Number Title Priority Date Filing Date
PL385048A PL385048A1 (en) 2008-04-28 2008-04-28 Method of production the magnesium doped epitaxial layer of InxAlyGa1-x-yN of type p conductivity, for which )0 x 0,2 and 0 y 0,3 and multilayer semiconductor structures containing such epitaxial layer

Country Status (2)

Country Link
PL (1) PL385048A1 (en)
WO (1) WO2009139654A1 (en)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3929008B2 (en) * 2000-01-14 2007-06-13 シャープ株式会社 Nitride-based compound semiconductor light-emitting device and method for manufacturing the same
US20020157596A1 (en) * 2001-04-30 2002-10-31 Stockman Stephen A. Forming low resistivity p-type gallium nitride
US7118813B2 (en) * 2003-11-14 2006-10-10 Cree, Inc. Vicinal gallium nitride substrate for high quality homoepitaxy
PL211286B1 (en) * 2004-08-15 2012-04-30 Inst Wysokich Ciśnień Polskiej Akademii Nauk Nitride laser diode and method for the manufacture of nitride laser diode
PL371753A1 (en) * 2004-12-15 2006-06-26 Instytut Wysokich Ciśnień Polskiej Akademii Nauk Method for manufacture of admixture epitaxial layers InxAlyGa1-x-yN, InxAlyGa1-x-yN admixture epitaxial layer and semiconductor multilayer structure containing InxAlyGa1-x-yN epitaxial layer for which 1˛ x > 0.001 and 0.999 ˛ y > 0
JP5638198B2 (en) * 2005-07-11 2014-12-10 クリー インコーポレイテッドＣｒｅｅ Ｉｎｃ． Laser diode orientation on miscut substrates

Also Published As

Publication number Publication date
WO2009139654A1 (en) 2009-11-19

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