PL371753A1 - Method for manufacture of admixture epitaxial layers InxAlyGa1-x-yN, InxAlyGa1-x-yN admixture epitaxial layer and semiconductor multilayer structure containing InxAlyGa1-x-yN epitaxial layer for which 1˛ x > 0.001 and 0.999 ˛ y > 0 - Google Patents

Method for manufacture of admixture epitaxial layers InxAlyGa1-x-yN, InxAlyGa1-x-yN admixture epitaxial layer and semiconductor multilayer structure containing InxAlyGa1-x-yN epitaxial layer for which 1˛ x > 0.001 and 0.999 ˛ y > 0

Info

Publication number
PL371753A1
PL371753A1 PL371753A PL37175304A PL371753A1 PL 371753 A1 PL371753 A1 PL 371753A1 PL 371753 A PL371753 A PL 371753A PL 37175304 A PL37175304 A PL 37175304A PL 371753 A1 PL371753 A1 PL 371753A1
Authority
PL
Poland
Prior art keywords
inxalyga1
admixture
epitaxial layer
epitaxial
manufacture
Prior art date
Application number
PL371753A
Other languages
Polish (pl)
Inventor
Czesław Skierbiszewski
Sylwester Porowski
Izabella Grzegory
Piotr Perlin
Michał Leszczyński
Marcin Siekacz
Anna Feduniewicz
Tadeusz Suski
Przemysław Wiśniewski
Michał Boćkowski
Original Assignee
Instytut Wysokich Ciśnień Polskiej Akademii Nauk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Instytut Wysokich Ciśnień Polskiej Akademii Nauk filed Critical Instytut Wysokich Ciśnień Polskiej Akademii Nauk
Priority to PL371753A priority Critical patent/PL371753A1/en
Priority to EP05817699A priority patent/EP1829090A1/en
Priority to PCT/PL2005/000081 priority patent/WO2006065160A1/en
Publication of PL371753A1 publication Critical patent/PL371753A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02581—Transition metal or rare earth elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
PL371753A 2004-12-15 2004-12-15 Method for manufacture of admixture epitaxial layers InxAlyGa1-x-yN, InxAlyGa1-x-yN admixture epitaxial layer and semiconductor multilayer structure containing InxAlyGa1-x-yN epitaxial layer for which 1˛ x > 0.001 and 0.999 ˛ y > 0 PL371753A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
PL371753A PL371753A1 (en) 2004-12-15 2004-12-15 Method for manufacture of admixture epitaxial layers InxAlyGa1-x-yN, InxAlyGa1-x-yN admixture epitaxial layer and semiconductor multilayer structure containing InxAlyGa1-x-yN epitaxial layer for which 1˛ x > 0.001 and 0.999 ˛ y > 0
EP05817699A EP1829090A1 (en) 2004-12-15 2005-12-14 METHOD OF MANUFACTURING DOPED Inx AlyGa1-x-yN EPITAXIAL LAYERS, DOPED InxAlyGa1-x-yN EPITAXIAL LAYER AND SEMICONDUCTOR MULTI-LAYER STRUCTURE COMPRISING AT LEAST ONE DOPED InxALyGa1-x-yN EPITAXIAL LAYER, WHERE
PCT/PL2005/000081 WO2006065160A1 (en) 2004-12-15 2005-12-14 METHOD OF MANUFACTURING DOPED Inx AlyGa1-x-yN EPITAXIAL LAYERS, DOPED InxAlyGa1-x-yN EPITAXIAL LAYER AND SEMICONDUCTOR MULTI-LAYER STRUCTURE COMPRISING AT LEAST ONE DOPED InxALyGa1-x-yN EPITAXIAL LAYER, WHERE

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL371753A PL371753A1 (en) 2004-12-15 2004-12-15 Method for manufacture of admixture epitaxial layers InxAlyGa1-x-yN, InxAlyGa1-x-yN admixture epitaxial layer and semiconductor multilayer structure containing InxAlyGa1-x-yN epitaxial layer for which 1˛ x > 0.001 and 0.999 ˛ y > 0

Publications (1)

Publication Number Publication Date
PL371753A1 true PL371753A1 (en) 2006-06-26

Family

ID=36051512

Family Applications (1)

Application Number Title Priority Date Filing Date
PL371753A PL371753A1 (en) 2004-12-15 2004-12-15 Method for manufacture of admixture epitaxial layers InxAlyGa1-x-yN, InxAlyGa1-x-yN admixture epitaxial layer and semiconductor multilayer structure containing InxAlyGa1-x-yN epitaxial layer for which 1˛ x > 0.001 and 0.999 ˛ y > 0

Country Status (3)

Country Link
EP (1) EP1829090A1 (en)
PL (1) PL371753A1 (en)
WO (1) WO2006065160A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PL385048A1 (en) * 2008-04-28 2009-11-09 Topgan Spółka Z Ograniczoną Odpowiedzialnością Method of production the magnesium doped epitaxial layer of InxAlyGa1-x-yN of type p conductivity, for which )0 x 0,2 and 0 y 0,3 and multilayer semiconductor structures containing such epitaxial layer

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU7346396A (en) * 1995-10-13 1997-04-30 Centrum Badan Wysokocisnieniowych Method of manufacturing epitaxial layers of gan or ga(a1,in)n on single crystal gan and mixed ga(a1,in)n substrates
JP4432180B2 (en) * 1999-12-24 2010-03-17 豊田合成株式会社 Group III nitride compound semiconductor manufacturing method, group III nitride compound semiconductor device, and group III nitride compound semiconductor
US6447604B1 (en) * 2000-03-13 2002-09-10 Advanced Technology Materials, Inc. Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminum, indium, gallium) nitride ((al,in,ga)n) substrates for opto-electronic and electronic devices
JP2005508077A (en) * 2001-10-22 2005-03-24 イェール ユニバーシティ Method of hyperdoping semiconductor material, hyperdoped semiconductor material, and hyperdoped semiconductor device
WO2003094240A1 (en) * 2002-04-30 2003-11-13 Cree, Inc. High voltage switching devices and process for forming same

Also Published As

Publication number Publication date
EP1829090A1 (en) 2007-09-05
WO2006065160A8 (en) 2006-11-02
WO2006065160A1 (en) 2006-06-22

Similar Documents

Publication Publication Date Title
AU2003222003A8 (en) Methods for fabricating strained layers on semiconductor substrates
GB0708426D0 (en) Semiconductor multilayer substrate, method for producing same and light-emitting device
EP1708259B8 (en) Semiconductor device having GaN-based semiconductor layer
AU2003304129A1 (en) Methods for preserving strained semiconductor layers during oxide layer formation
GB0722572D0 (en) Group 3-5 nitride semiconductor multilayer substrate, method for manufacturing group 3-5 nitride semiconductor free-standing substrate
EP2090680A4 (en) Sapphire substrate, nitride semiconductor luminescent element using the sapphire substrate, and method for manufacturing the nitride semiconductor luminescent element
EP1635396A4 (en) Laminated semiconductor substrate and process for producing the same
EP1818971A4 (en) Method for manufacturing direct bond wafer, and direct bond wafer
HK1117270A1 (en) Substrate and method of fabricating the same, and semiconductor device and method of fabricating the same
TWI368320B (en) Solid state imaging device, manufacturing method of the same, and substrate for solid state imaging device
GB2440483B (en) Method for luminescent layer formation
PL1871928T3 (en) Method for producing iii-n layers, substrates comprising iii-n layers and use of such substrates in semiconductor devices
EP1724840A4 (en) Substrate for photoelectric converter, photoelectric converter, and multilayer photoelectric converter
EP1783824A4 (en) Method for forming p-type semiconductor region, and semiconductor element
GB0711539D0 (en) Method for synthesizing semiconductor quantom dots
EP1837922A4 (en) GaN-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR FABRICATING SAME
SG116648A1 (en) Surface protecting film for semiconductor wafer and method of protecting semiconductor wafer using the same.
SG126899A1 (en) Light-emitting device, method for making the same,and nitride semiconductor substrate
TWI340771B (en) Method for contacting conducting layers overlying magnetoelectronic elements of mram devices
HK1097350A1 (en) Nitride-based compound semiconductor, method of cleaning a compound semiconductor, method of producing the same and substrate
EP1709670A4 (en) Group iii nitride semiconductor multilayer structure
WO2004095552A3 (en) Method for producing a tensioned layer on a substrate, and a layer structure
TW200802985A (en) Radiation-emitting semiconductor body with carrier substrate and the method for fabricating the same
HK1079336A1 (en) Semiconductor wafer and manufacturing method therefor
EP1794780A4 (en) Method for fabrication of group iii nitride semiconductor

Legal Events

Date Code Title Description
REFS Decisions on refusal to grant patents (taken after the publication of the particulars of the applications)