PL3146087T3 - Pokrywa z układem czujników dla konfigurowalnego układu pomiarowego do konfigurowalnego układu napylania jonowego - Google Patents

Pokrywa z układem czujników dla konfigurowalnego układu pomiarowego do konfigurowalnego układu napylania jonowego

Info

Publication number
PL3146087T3
PL3146087T3 PL15817332T PL15817332T PL3146087T3 PL 3146087 T3 PL3146087 T3 PL 3146087T3 PL 15817332 T PL15817332 T PL 15817332T PL 15817332 T PL15817332 T PL 15817332T PL 3146087 T3 PL3146087 T3 PL 3146087T3
Authority
PL
Poland
Prior art keywords
configurable
cover
sputtering
sensor
measuring
Prior art date
Application number
PL15817332T
Other languages
English (en)
Inventor
Ivan Van De Putte
Niek DEWILDE
Guy Gobin
Wilmert De Bosscher
Original Assignee
Soleras Advanced Coatings Bvba
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soleras Advanced Coatings Bvba filed Critical Soleras Advanced Coatings Bvba
Publication of PL3146087T3 publication Critical patent/PL3146087T3/pl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3476—Testing and control
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3492—Variation of parameters during sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
    • C23C14/547—Controlling the film thickness or evaporation rate using measurement on deposited material using optical methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32899—Multiple chambers, e.g. cluster tools
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/347—Thickness uniformity of coated layers or desired profile of target erosion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/3473—Composition uniformity or desired gradient

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Physical Vapour Deposition (AREA)
PL15817332T 2015-01-11 2015-12-21 Pokrywa z układem czujników dla konfigurowalnego układu pomiarowego do konfigurowalnego układu napylania jonowego PL3146087T3 (pl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
BE2015/5011A BE1022682B1 (nl) 2015-01-11 2015-01-11 Een deksel met een sensorsysteem voor een configureerbaar meetsysteem voor een configureerbaar sputtersysteem
PCT/EP2015/080897 WO2016110407A1 (en) 2015-01-11 2015-12-21 A cover with a sensor system for a configurable measuring system for a configurable sputtering system
EP15817332.8A EP3146087B1 (en) 2015-01-11 2015-12-21 A cover with a sensor system for a configurable measuring system for a configurable sputtering system

Publications (1)

Publication Number Publication Date
PL3146087T3 true PL3146087T3 (pl) 2018-11-30

Family

ID=53177047

Family Applications (1)

Application Number Title Priority Date Filing Date
PL15817332T PL3146087T3 (pl) 2015-01-11 2015-12-21 Pokrywa z układem czujników dla konfigurowalnego układu pomiarowego do konfigurowalnego układu napylania jonowego

Country Status (8)

Country Link
US (1) US20160362780A1 (pl)
EP (1) EP3146087B1 (pl)
BE (1) BE1022682B1 (pl)
DK (1) DK3146087T3 (pl)
ES (1) ES2686877T3 (pl)
HU (1) HUE039502T2 (pl)
PL (1) PL3146087T3 (pl)
WO (1) WO2016110407A1 (pl)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3346023A1 (en) * 2017-01-05 2018-07-11 Essilor International Method for layer by layer optimization of a thin film
FR3074906B1 (fr) * 2017-12-07 2024-01-19 Saint Gobain Procede et dispositif de determination automatique de valeurs d'ajustement de parametres de fonctionnement d'une ligne de depot
DE102018101173B4 (de) 2018-01-19 2022-09-01 VON ARDENNE Asset GmbH & Co. KG Verfahren
BE1025541B1 (nl) * 2018-05-10 2019-04-03 Soleras Advanced Coatings Bvba Weergave-inrichting
DE102019200761A1 (de) * 2019-01-22 2020-07-23 TRUMPF Hüttinger GmbH + Co. KG Verfahren zur Kompensation von Prozessschwankungen eines Plasmaprozesses und Regler für einen Leistungsgenerator zur Versorgung eines Plasmaprozesses
EP4063083A1 (en) * 2021-03-26 2022-09-28 Siemens Aktiengesellschaft Method, device and system for configuring a coating machine
DE102022205971A1 (de) * 2022-06-13 2023-12-14 Carl Zeiss Smt Gmbh Verfahren zum Beschichten eines Spiegelsubstrats mit einer für Nutz- Wellenlängen hochreflektierenden Mehrlagen-Beschichtung sowie Beschichtungsanlage zur Durchführung eines derartigen Verfahrens

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55500588A (pl) * 1978-08-18 1980-09-04
JPH01268859A (ja) * 1988-04-20 1989-10-26 Casio Comput Co Ltd 透明導電膜の形成方法および形成装置
KR0165470B1 (ko) * 1995-11-08 1999-02-01 김광호 반도체 소자의 박막형성 프로그램의 자동보정 시스템
GB9616853D0 (en) * 1996-08-10 1996-09-25 Vorgem Limited An improved thickness monitor
US6103069A (en) * 1997-03-31 2000-08-15 Applied Materials, Inc. Chamber design with isolation valve to preserve vacuum during maintenance
US6866255B2 (en) * 2002-04-12 2005-03-15 Xerox Corporation Sputtered spring films with low stress anisotropy
US20060260938A1 (en) * 2005-05-20 2006-11-23 Petrach Philip M Module for Coating System and Associated Technology
WO2012024278A1 (en) * 2010-08-16 2012-02-23 First Solar, Inc. Measurement system and method
WO2014105557A1 (en) * 2012-12-27 2014-07-03 First Solar, Inc. Method and system for in-line real-time measurements of layers of multilayered front contacts of photovoltaic devices and calculation of opto-electronic properties and layer thicknesses thereof

Also Published As

Publication number Publication date
EP3146087B1 (en) 2018-06-13
DK3146087T3 (en) 2018-09-24
EP3146087A1 (en) 2017-03-29
HUE039502T2 (hu) 2019-01-28
BE1022682A1 (nl) 2016-07-14
US20160362780A1 (en) 2016-12-15
WO2016110407A1 (en) 2016-07-14
ES2686877T3 (es) 2018-10-22
BE1022682B1 (nl) 2016-07-14

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