PL209746A1 - METHOD AND DEVICE FOR SEPARATING THE SEMICONDUCTOR MATERIAL - Google Patents

METHOD AND DEVICE FOR SEPARATING THE SEMICONDUCTOR MATERIAL

Info

Publication number
PL209746A1
PL209746A1 PL20974678A PL20974678A PL209746A1 PL 209746 A1 PL209746 A1 PL 209746A1 PL 20974678 A PL20974678 A PL 20974678A PL 20974678 A PL20974678 A PL 20974678A PL 209746 A1 PL209746 A1 PL 209746A1
Authority
PL
Poland
Prior art keywords
separating
semiconductor material
semiconductor
Prior art date
Application number
PL20974678A
Other languages
Polish (pl)
Other versions
PL115365B1 (en
Inventor
Ulrich Rucha
Gerhard Barowski
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of PL209746A1 publication Critical patent/PL209746A1/en
Publication of PL115365B1 publication Critical patent/PL115365B1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
PL1978209746A 1977-09-29 1978-09-21 Apparatus for manufacturing a semiconductive material PL115365B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19772743950 DE2743950A1 (en) 1977-09-29 1977-09-29 Silicon semiconductor sepn. from reacting gases - watched using inspection tube with window protruding into reaction chamber with electrodes which avoids opacity developing on window surface

Publications (2)

Publication Number Publication Date
PL209746A1 true PL209746A1 (en) 1979-06-04
PL115365B1 PL115365B1 (en) 1981-03-31

Family

ID=6020264

Family Applications (1)

Application Number Title Priority Date Filing Date
PL1978209746A PL115365B1 (en) 1977-09-29 1978-09-21 Apparatus for manufacturing a semiconductive material

Country Status (7)

Country Link
JP (1) JPS5458350A (en)
BR (1) BR7806432A (en)
DE (1) DE2743950A1 (en)
IN (1) IN149401B (en)
IT (1) IT1099206B (en)
PL (1) PL115365B1 (en)
SU (1) SU810086A3 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3107421C2 (en) * 1981-02-27 1985-02-14 Heraeus Quarzschmelze Gmbh, 6450 Hanau Fused silica bell for the deposition of polysilicon
JPH0239525A (en) * 1988-07-29 1990-02-08 Hitachi Ltd Heat treatment device for semiconductor
US9656782B2 (en) 2010-03-18 2017-05-23 Jong Soo Park Structure for detachable coupling of containers
US8613358B2 (en) 2010-03-18 2013-12-24 Jong Soo Park Structure for detachable coupling of containers

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1221612B (en) * 1962-09-15 1966-07-28 Siemens Ag Device for keeping constant the temperature of a carrier used in a pyrolytic decomposition of a semiconductor compound
GB1209580A (en) * 1969-03-17 1970-10-21 Hamco Mach & Elect Co Automatic control for crystal growing apparatus
DE2518853C3 (en) * 1975-04-28 1979-03-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Device for separating elemental silicon from a reaction gas

Also Published As

Publication number Publication date
PL115365B1 (en) 1981-03-31
BR7806432A (en) 1979-05-08
IN149401B (en) 1981-11-28
IT1099206B (en) 1985-09-18
IT7828167A0 (en) 1978-09-28
DE2743950C2 (en) 1987-02-12
JPS5458350A (en) 1979-05-11
SU810086A3 (en) 1981-02-28
DE2743950A1 (en) 1979-04-12
JPS5639048B2 (en) 1981-09-10

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