PL112708B1 - Integrated logic circuit - Google Patents

Integrated logic circuit Download PDF

Info

Publication number
PL112708B1
PL112708B1 PL1978203795A PL20379578A PL112708B1 PL 112708 B1 PL112708 B1 PL 112708B1 PL 1978203795 A PL1978203795 A PL 1978203795A PL 20379578 A PL20379578 A PL 20379578A PL 112708 B1 PL112708 B1 PL 112708B1
Authority
PL
Poland
Prior art keywords
integrated logic
logic circuit
transistor
unipolar transistor
gates
Prior art date
Application number
PL1978203795A
Other languages
English (en)
Polish (pl)
Other versions
PL203795A1 (pl
Inventor
Artases R Nazarjan
Vjaceslav J Kremlev
Vil Iam N Kokin
Nikolaj M Manza
Original Assignee
Vil Iam N Kokin
Kremlev V J
Nikolaj M Manza
Artases R Nazarjan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vil Iam N Kokin, Kremlev V J, Nikolaj M Manza, Artases R Nazarjan filed Critical Vil Iam N Kokin
Publication of PL203795A1 publication Critical patent/PL203795A1/xx
Publication of PL112708B1 publication Critical patent/PL112708B1/pl

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/09403—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors
    • H03K19/09414—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors with gate injection or static induction [STIL]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/091—Integrated injection logic or merged transistor logic
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/09403—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors
    • H03K19/09418—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors in combination with bipolar transistors [BIFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices
    • H10D89/217—Design considerations for internal polarisation in field-effect devices comprising arrangements for charge injection in static induction transistor logic [SITL] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
PL1978203795A 1977-01-06 1978-01-04 Integrated logic circuit PL112708B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU772438345A SU619066A1 (ru) 1977-01-06 1977-01-06 Интегральный логический элемент

Publications (2)

Publication Number Publication Date
PL203795A1 PL203795A1 (pl) 1978-08-28
PL112708B1 true PL112708B1 (en) 1980-10-31

Family

ID=20689964

Family Applications (1)

Application Number Title Priority Date Filing Date
PL1978203795A PL112708B1 (en) 1977-01-06 1978-01-04 Integrated logic circuit

Country Status (11)

Country Link
US (1) US4160918A (en, 2012)
JP (1) JPS53108271A (en, 2012)
CH (1) CH618547A5 (en, 2012)
CS (1) CS196933B1 (en, 2012)
DD (1) DD134169A1 (en, 2012)
DE (1) DE2800336A1 (en, 2012)
FR (1) FR2377122A1 (en, 2012)
GB (1) GB1550793A (en, 2012)
NL (1) NL7800042A (en, 2012)
PL (1) PL112708B1 (en, 2012)
SU (1) SU619066A1 (en, 2012)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5919476B2 (ja) * 1978-05-16 1984-05-07 工業技術院長 半導体集積回路
JPS5546548A (en) * 1978-09-28 1980-04-01 Semiconductor Res Found Electrostatic induction integrated circuit
US4300064A (en) * 1979-02-12 1981-11-10 Rockwell International Corporation Schottky diode FET logic integrated circuit
US4405870A (en) * 1980-12-10 1983-09-20 Rockwell International Corporation Schottky diode-diode field effect transistor logic
GB2130790B (en) * 1982-10-26 1986-04-16 Plessey Co Plc Integrated injection logic device
US5467050A (en) * 1994-01-04 1995-11-14 Texas Instruments Incorporated Dynamic biasing circuit for semiconductor device
US5495198A (en) * 1994-01-04 1996-02-27 Texas Instruments Incorporated Snubbing clamp network

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7015520A (en, 2012) * 1970-10-23 1972-04-25
US3816758A (en) * 1971-04-14 1974-06-11 Ibm Digital logic circuit
DE2356301C3 (de) * 1973-11-10 1982-03-11 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierte, logische Schaltung
NL7414273A (nl) * 1974-11-01 1976-05-04 Philips Nv Logische schakeling.
SU597094A1 (ru) 1974-11-27 1978-03-05 Московский институт электронной техники Инжекционный логический элемент
DE2509530C2 (de) * 1975-03-05 1985-05-23 Ibm Deutschland Gmbh, 7000 Stuttgart Halbleiteranordnung für die Grundbausteine eines hochintegrierbaren logischen Halbleiterschaltungskonzepts basierend auf Mehrfachkollektor-Umkehrtransistoren
US4053923A (en) * 1976-09-23 1977-10-11 Motorola, Inc. Integrated logic elements with improved speed-power characteristics

Also Published As

Publication number Publication date
GB1550793A (en) 1979-08-22
JPS53108271A (en) 1978-09-20
FR2377122B1 (en, 2012) 1980-07-18
PL203795A1 (pl) 1978-08-28
DE2800336A1 (de) 1978-07-13
CH618547A5 (en, 2012) 1980-07-31
FR2377122A1 (fr) 1978-08-04
DD134169A1 (de) 1979-02-07
NL7800042A (nl) 1978-07-10
SU619066A1 (ru) 1979-03-15
CS196933B1 (en) 1980-04-30
US4160918A (en) 1979-07-10

Similar Documents

Publication Publication Date Title
Bowler et al. High current regimes in transistor collector regions
Fossum et al. An analytic model for minority-carrier transport in heavily doped regions of silicon devices
US3482111A (en) High speed logical circuit
PL112708B1 (en) Integrated logic circuit
US4833347A (en) Charge disturbance resistant logic circuits utilizing true and complement input control circuits
GB1502639A (en) High-speed low consumption integrated logic circuit
US2920215A (en) Switching circuit
US2895058A (en) Semiconductor devices and systems
Birrittella et al. The effect of backgating on the design and performance of GaAs digital integrated circuits
Thoidis et al. Quaternary voltage-mode CMOS circuits for multiple-valued logic
GB1286991A (en) Capacitor pull-up shift register bit
US3524996A (en) Multiplexer switch using an isolation device
US3287577A (en) Low dissipation logic gates
US3254238A (en) Current steering logic circuits having negative resistance diodes connected in the output biasing networks of the amplifying devices
Guckel et al. Transition region behavior in abrupt, forward-biased pn-junctions
DE69332388T2 (de) Steuerungsvorrichtung für Halbleitervorrichtung mit doppeltem Gate
US3452216A (en) Logic circuit
Tarui et al. Transistor Schottky-barrier-diode integrated logic circuit
US3035213A (en) Flip flop diode with current dependent current amplification
US3204128A (en) High speed turnoff gate driven by a gating means
US2990479A (en) Switching circuits using constant current source
US3234399A (en) Logic circuit
EP0492339B1 (en) Noise reduction technique for breakdown diodes
US3161781A (en) Anti-coincidence circuit using tunnel diodes
KR900001812B1 (ko) 단락방지 버퍼회로