PL112708B1 - Integrated logic circuit - Google Patents

Integrated logic circuit Download PDF

Info

Publication number
PL112708B1
PL112708B1 PL1978203795A PL20379578A PL112708B1 PL 112708 B1 PL112708 B1 PL 112708B1 PL 1978203795 A PL1978203795 A PL 1978203795A PL 20379578 A PL20379578 A PL 20379578A PL 112708 B1 PL112708 B1 PL 112708B1
Authority
PL
Poland
Prior art keywords
transistor
gates
unipolar
unipolar transistor
integrated logic
Prior art date
Application number
PL1978203795A
Other languages
English (en)
Polish (pl)
Other versions
PL203795A1 (pl
Inventor
Artases R Nazarjan
Vjaceslav J Kremlev
Vil Iam N Kokin
Nikolaj M Manza
Original Assignee
Vil Iam N Kokin
Kremlev V J
Nikolaj M Manza
Artases R Nazarjan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vil Iam N Kokin, Kremlev V J, Nikolaj M Manza, Artases R Nazarjan filed Critical Vil Iam N Kokin
Publication of PL203795A1 publication Critical patent/PL203795A1/xx
Publication of PL112708B1 publication Critical patent/PL112708B1/pl

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/09403Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors
    • H03K19/09414Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors with gate injection or static induction [STIL]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0214Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • H01L27/0225Charge injection in static induction transistor logic structures [SITL]
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/091Integrated injection logic or merged transistor logic
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/09403Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors
    • H03K19/09418Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors in combination with bipolar transistors [BIFET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Logic Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
PL1978203795A 1977-01-06 1978-01-04 Integrated logic circuit PL112708B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU772438345A SU619066A1 (ru) 1977-01-06 1977-01-06 Интегральный логический элемент

Publications (2)

Publication Number Publication Date
PL203795A1 PL203795A1 (pl) 1978-08-28
PL112708B1 true PL112708B1 (en) 1980-10-31

Family

ID=20689964

Family Applications (1)

Application Number Title Priority Date Filing Date
PL1978203795A PL112708B1 (en) 1977-01-06 1978-01-04 Integrated logic circuit

Country Status (11)

Country Link
US (1) US4160918A (US08080257-20111220-C00005.png)
JP (1) JPS53108271A (US08080257-20111220-C00005.png)
CH (1) CH618547A5 (US08080257-20111220-C00005.png)
CS (1) CS196933B1 (US08080257-20111220-C00005.png)
DD (1) DD134169A1 (US08080257-20111220-C00005.png)
DE (1) DE2800336A1 (US08080257-20111220-C00005.png)
FR (1) FR2377122A1 (US08080257-20111220-C00005.png)
GB (1) GB1550793A (US08080257-20111220-C00005.png)
NL (1) NL7800042A (US08080257-20111220-C00005.png)
PL (1) PL112708B1 (US08080257-20111220-C00005.png)
SU (1) SU619066A1 (US08080257-20111220-C00005.png)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5919476B2 (ja) * 1978-05-16 1984-05-07 工業技術院長 半導体集積回路
JPS5546548A (en) * 1978-09-28 1980-04-01 Semiconductor Res Found Electrostatic induction integrated circuit
US4300064A (en) * 1979-02-12 1981-11-10 Rockwell International Corporation Schottky diode FET logic integrated circuit
US4405870A (en) * 1980-12-10 1983-09-20 Rockwell International Corporation Schottky diode-diode field effect transistor logic
GB2130790B (en) * 1982-10-26 1986-04-16 Plessey Co Plc Integrated injection logic device
US5467050A (en) * 1994-01-04 1995-11-14 Texas Instruments Incorporated Dynamic biasing circuit for semiconductor device
US5495198A (en) * 1994-01-04 1996-02-27 Texas Instruments Incorporated Snubbing clamp network

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7015520A (US08080257-20111220-C00005.png) * 1970-10-23 1972-04-25
US3816758A (en) * 1971-04-14 1974-06-11 Ibm Digital logic circuit
DE2356301C3 (de) * 1973-11-10 1982-03-11 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierte, logische Schaltung
NL7414273A (nl) * 1974-11-01 1976-05-04 Philips Nv Logische schakeling.
DE2509530C2 (de) * 1975-03-05 1985-05-23 Ibm Deutschland Gmbh, 7000 Stuttgart Halbleiteranordnung für die Grundbausteine eines hochintegrierbaren logischen Halbleiterschaltungskonzepts basierend auf Mehrfachkollektor-Umkehrtransistoren
US4053923A (en) * 1976-09-23 1977-10-11 Motorola, Inc. Integrated logic elements with improved speed-power characteristics

Also Published As

Publication number Publication date
JPS53108271A (en) 1978-09-20
CS196933B1 (en) 1980-04-30
GB1550793A (en) 1979-08-22
FR2377122B1 (US08080257-20111220-C00005.png) 1980-07-18
DE2800336A1 (de) 1978-07-13
FR2377122A1 (fr) 1978-08-04
NL7800042A (nl) 1978-07-10
DD134169A1 (de) 1979-02-07
CH618547A5 (US08080257-20111220-C00005.png) 1980-07-31
PL203795A1 (pl) 1978-08-28
US4160918A (en) 1979-07-10
SU619066A1 (ru) 1979-03-15

Similar Documents

Publication Publication Date Title
CN101034884B (zh) 带有晶体管衬底偏置的集成电路的抑制闩锁电路
US2712065A (en) Gate circuitry for electronic computers
GB945112A (en) Improvements in or relating to signal translating arrangements using two terminal negative resistance semi-conductive devices
US4028556A (en) High-speed, low consumption integrated logic circuit
PL112708B1 (en) Integrated logic circuit
US2920215A (en) Switching circuit
US3247399A (en) Anti-race flip-flop
US4833347A (en) Charge disturbance resistant logic circuits utilizing true and complement input control circuits
US2895058A (en) Semiconductor devices and systems
US3473047A (en) High speed digital logic circuit having non-saturating output transistor
US3524996A (en) Multiplexer switch using an isolation device
US3287577A (en) Low dissipation logic gates
US3254238A (en) Current steering logic circuits having negative resistance diodes connected in the output biasing networks of the amplifying devices
US3521081A (en) Logical circuit element comprising an mos field effect transistor
CN102655406A (zh) 接收电路
US3253165A (en) Current steering logic circuit employing negative resistance devices in the output networks of the amplifying devices
Lehovec GaAs enhancement mode FET-tunnel diode ultra-fast low power inverter and memory cell
Hwang et al. Second breakdown prediction by two-dimensonal numerical analysis of BJT turnoff
US3299290A (en) Two terminal storage circuit employing single transistor and diode combination
US2945134A (en) Bistable semiconductor circuit
CN100414838C (zh) 标准逻辑工艺上的负电压有效传输电路
US3204128A (en) High speed turnoff gate driven by a gating means
US4806795A (en) Transfer gate circuit protected from latch up
US3035213A (en) Flip flop diode with current dependent current amplification
US3191057A (en) Current adder type logic circuit