NZ201906A - Surface coating plastics substrates in high intensity pulsed gas plasma - Google Patents
Surface coating plastics substrates in high intensity pulsed gas plasmaInfo
- Publication number
- NZ201906A NZ201906A NZ20190682A NZ20190682A NZ201906A NZ 201906 A NZ201906 A NZ 201906A NZ 20190682 A NZ20190682 A NZ 20190682A NZ 20190682 A NZ20190682 A NZ 20190682A NZ 201906 A NZ201906 A NZ 201906A
- Authority
- NZ
- New Zealand
- Prior art keywords
- substrate
- plasma
- high intensity
- layer
- gas
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
- C08J7/12—Chemical modification
- C08J7/123—Treatment by wave energy or particle radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B5/00—Electrostatic spraying apparatus; Spraying apparatus with means for charging the spray electrically; Apparatus for spraying liquids or other fluent materials by other electric means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
- B05B7/16—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed
- B05B7/22—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed electrically, magnetically or electromagnetically, e.g. by arc
- B05B7/222—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed electrically, magnetically or electromagnetically, e.g. by arc using an arc
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/14—Surface shaping of articles, e.g. embossing; Apparatus therefor by plasma treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
- C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
- C23C16/029—Graded interfaces
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29L—INDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
- B29L2031/00—Other particular articles
- B29L2031/30—Vehicles, e.g. ships or aircraft, or body parts thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Plasma & Fusion (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
Description
201906
ORIGINAL
i Priority Date(8): /viT3. r.W!
1 ;
i j * * "
! Complete Specification Filed: th. .c?....
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Publication Da tec M .5. PEQ . V$5.
P.O. Journal, No: ... /P? .........
NEW ZEALAND THE PATENTS ACT, 1953
COMPLETE SPECIFICATION
"SURFACE PROCESSING OF A SUBSTRATE MATERIAL"
WE, INTERNATIONAL STANDARD ELECTRIC CORPORATION, a Corporation of the State of Delaware, United States of America, of 320 Park Avenue, New York 22, New York, United States of America, hereby declare the invention, for which we pray that a patent may be granted to us, and the method by which it is to be performed, to be particularly described in and by the following statement:
201906
The present invention relates to the surface processing of a substrate material. Plasma processing and in particular low temperature glow discharge plasma processing is potentially a very useful process for the surface processing of substrate materials. As a source of high energy radiation it can promote both physical and chemical changes at the surface of the substrate and can be used for etching, roughening, polymerisation, cross-linking, adhesion promotion, grafting and coating of the surface. It is possible to include more than one of these processes during a treatment so that one can sequentially carry out surface etching, cross-linking and layer or multilayer deposition of a substrate by simply changing the gas composition. Such a process ensures the maximum possible adherence and compatibility between different deposited layers and avoids other problems such as internal optical reflection caused by abrupt interfaces.
However, the deposition of good inorganic coatings in normal discharges requires substrate temperatures in excess of 250°C (too high for most plastic substrates (for example). The reason for this is probably the relatively low degree of molecular dissociation in the normal discharges. The species arriving at the substrate surface therefore requires additional energy for further decomposition and for structural arrangement of the coating. This has therefore limited the use of plasma in surface processing of many materials and in particular heat sensitive materials such as plastics.
2
2 3 JUL 1985
201906
By using a plasma of low average power thereby minimising the problems of heating we may use a high intensity plasma on a heat sensitive substrate. One way in which we can achieve this is by using a mark-space ratio of less than unity (i.e. longer space than mark) and we can vary the mark-space ratio of the pulses to suit the substrate, the plasma and desired effect concerned.
We may provide pulses of various mark-space ratios for example 1:1 downwards and preferably less than 1:10 and in certain instances the mark-space ratio may be as low as 1:10,000.
In a particular arrangement the pulse length may be lOys to 1 ms at a pulse frequency of 10 ys to Is intervals ("s" = second).
The pulse frequency may be 50 KHz to 30 MHz.
The process may be used for coating, etching, cross-linking, surface heating, grafting, roughening or adhesion promotion.
201906
An electrical potential may be applied to the substrate and in a particularly preferred arrangement this electrical potential may be approximately 1000 volts. The electrical potential may be continuous or pulsed and will normally be negative with respect to the plasma voltage.
Preferred arrangements of the invention will now be described by way of example only and with reference to the accompanying drawing which shows plasma apparatus for carrying out the process of the invention.
The surface processing of a substrate material by a plasma potentially has very many uses. For example, where the present use of a material is based on its surface properties, it allows the use of a cheaper, lighter or otherwise preferred substrate material to be coated with the material whose properties are desired. For example, a plastic substrate material is often preferred for cheapness and lightness whereas the surface properties of glass which is hard and scratch resistant is preferred. The use of a plasma process to coat plastic material with a layer of glass would improve its wear and abrasion resistance, would make it water and dirt repellant, and would allow for the production of a lighter .and cheaper item. There are many uses for such a material but a particular use which is envisaged is in the side windows of motor vehicles and the reflectors and lamp covers of motor vehicles.
As well as telephones, taps and other domestic parts and
201906
plastic packaging of integrated circuits and other electrical components, other uses of plasma surface processing of plastics material include plastic bumpers and other cosmetic parts where the surface properties of the plastic can be changed so as to give an attractive appearance, abrasion and chemical resistance anti-reflection properties and^the1 like.
As has been mentioned above, it has hitherto not been possible to apply plasma technology to plastics material because they are heat sensitive. However plasma processing provides good throwing power, a low pinhole (defect) count, is flexible, not only in the file material to be coated but also in respect of the coating process.
The present invention describes a process for surface processing a substrate material (such as a plastics material) comprising exposing the surface of the substrate to a high intensity pulsed plasma. By pulsing the plasma and suitably selecting the mark-space ratio, high intensity plasma can be used but the overall energy input is sufficiently low not to adversely affect plastic material. It will be understood that although the process will be described with reference to a heat sensitive material such as plastic the principles would also apply to other materials which are less heat sensitive such as steel.
The process is particularly useful in producing articles for use in the automotive, sanitary, industrial and optical
201906
In the drawing there is shown a sealed chamber 10 in which is mounted the article 11 whose surface is to be processed. Surrounding the part of the sealed chamber 10 in which the article 11 is mounted is a coil 12 connected to a 60kw pulsed RF generator 13. A mass spectrometer 14 is arranged.,to view the gases within the chamber 10 and the article may be viewed by means of an optical system 16. The chamber 10 may be evacuated by means of a pump connected to the outlet 17 and gas may be inserted in the chamber by means of the inlet 18. A sealed chamber 19 is provided between the mass spectrometer 14 and the chamber 10 there being provided suitable windows each side of the chamber 19, and a pump may be connected to an outlet 21 of the chamber 19.
In use, the article 11 is inserted within the chamber and the chamber 10 is then evacuated by means of a pump through the outlet 17. When a pre-determined level of vacuum has been reached a desired gas may be inserted through the inlet 18. The RF generator 13 may then be switched on so as to provide a pulsed electrical field through the coils 12. The effect of : this is to ionise the gas within the chamber 10 and thereby produce a plasma. The ionised particles bombard the surface of the article 11 to carry out the surface processing desired. The mass spectrometer 14 is used in this arrangement to monitor the types and proportion of ions present in the plasma.
2 3JULJ935
6
201906
When a first coating process is completed, the gas may, if desired, be evacuated through the outlet 17 and a further gas inserted through the inlet 18 to provide a second processing step. If desired all of the gas may be removed from the chamber 10 before inserting a second gas or alternatively the second gas may be inserted at the same time as the first gas is being removed through the outlet 17. In this way two separate surface processing steps may follow one another and if the gases are charged in the second above described manner then there will be no surface discontinuities between the two surface processing steps. In the apparatus thus far described the surface of the article 11, particularly if of plastic, may be processed to provide cross-linking in the plastic surface material, polymerisation, and in some instances incorporation of the material in the gas into the surface layer.
The plasma process so far described is suitable for a number of surface processes but to extend the use of the plasma process to include other atoms of elements for which there are no suitable volatile compounds, which includes many metals, an additional processing step and part of the apparatus is provided. Installed within the chamber 10 is a suitable target material, for example silicon carbide or oxide or nitride or titanium nitride or oxide and means may be provided to fire ions at the target material. Material is sputtered from the target into the already existing plasma and is evenly distri-
|3^-: -J!
2 3JuL:X! i
201906
buted within the plasma by diffusion. In this way atoms or ions of the target material are produced within the plasma which can thereby be coated onto the article 11. The beam bias directed at the target may be continuous although if preferred may be pulsed, but the plasma will be pulsed as in the preceding example. Such a sputtering process may be carried out by a magnetron and the sputtering process may be carried out throughout the process or may be provided for only part of the process. Furthermore the target material may be changed so as to provide a different coating material.
Normally the article 11, during the process will be at a bias voltage of about 1000 volts, which is negative with respect to the plasma. The frequency of the electrical field producing the plasma is chosen depending upon the materials
'
•
involved but may typically be between 50KHz and 30MHz and the mark-space ratio may be chosen to be greater than 1:1 and will normally be between 1:10 and 1:10000. The pulse intervals will normally be lOOys to Is. For plastic materials the pulse length may be lOys to 1ms a 10 ms to Is intervals which will restrict the average power density to a few hundred watts per litre.
It is believed that although the plasma is pulsed, reactive species are available during the off periods. The chamber 10 should be maintained at about 0.01 torr and power levels of at least a few kW per litre are required.
u,z. PA7BJT ornoe _ 8 - 2 3JUL 1985
RvO:/:v
201906
The range of materials to which the process may be applied is not limited. However, the process is particularly suited for the treatment of heat sensitive materials, both organic and inorganic. It may also be used, however, for surface treating other materials such as steel or aluminium.
The gas chosen will depend upon the process required. Lower substrate temperatures can be used. Atomic species have the advantage of having much higher chemical energies and structural symmetry. Such discharges have further advantages as sources for ultra-violet radiation which will be beneficial to the production of strong cross-linking of plastic surfaces. The article 11 may be made of a wide range of materials including plastics such a sacrylics and carbonates. The processing envisaged includes surface cleaning and activation, graft polymer of matching optical properties, gradually phasing into wear resistant hard material of high refractive index such as silicon carbide or silicon ditride, a quarter wave (A/ 4) inorganic layer of suitable refractive index of, for example, SiC^r and a gradual layer of thin optically matched water repellant flurocarbon.
The use of this process is particularly preferred to arrange a moisture impervious layer for, for example infra red lenses, and may be used to coat particles in a fluidised bed arrangement. A magnetic field may be applied to enhance the degree of ionisation. Additional internal and external heating sources may be applied to create the right thermal conditions
201906
for article 11. The coupling as illustrated in the drawing between the article and the power source will generally be inductive.
In certain processes, for example when etching, it may be preferable to place the article 11 outside the active region.
In certain arrangements it may be preferred to pulse the gas supply. In a particular arrangement, the process may be used to provide impermeable coatings for plastics for cables.
As an example of the use of the apparatus, a very thin 0.15 ym film of titanium nitride has been coated by means of the plasma process of the invention on an underlayer of 3 um thick titatium on PVC plastic. Such a plastic material shows substantial improvements in wear performance.
In a pin-on-disc test, in which the substrate was worn against steel ball bearings, there was an improvement by a factor of 20 and in a reciprocating wear test, using a glass loaded poly-tetra-fluorethylene stud with sand and fast curring alumina-interposed showed a sixty fold improvement.
Fif-ir^jVED '
' - I ir-itr. -j}
Claims (12)
1. A process for depositing at least one layer of desired material onto a substrate, comprising exposing said substrate to a pulsed gas plasma whereby ionized particles produced thereby are deposited on said substrate to form said layer of desired material, the said plasma's average power being determined by selecting a pulse mark-space ratio of less than 1:1.
2. A process as claimed in claim 1 wherein the mark-space ratio is less than 1:10.
3. A process as claimed in claim 1 or 2, wherein the pulse length is between 10 ys and 1 ms at intervals between 10 us and Is.
4. A process as claimed in any one of the preceding claims, wherein the plasma is produced by an electric field with a frequency between 50 KHz and 30 MHz.
5. A process as claimed in any one of the preceding claims, wherein an electric potential is applied to the substrate.
6. A process as claimed in claim 5, wherein the electric potential applied to the substrate is approximately 1000 volts.
7. A process as claimed in any one of the preceding claims, wherein a succession of layers is coated onto the substrate by changing the gas or gas mixture with time.
8. A process as claimed in any one of the preceding claims, wherein the at least one layer of material deposited by the 2019 0& plasma is provided by particles of material produced by a high intensity beam of particles directed at a target material and diffused into said plasma.
9. A process as claimed in claim 8 in which the high intensity beam of particles is provided by a magnetron.
10. A process as claimed in any one of the preceding claims, wherein said substrate is a plastic material.
11. A process as claimed in claim 1 substantially as hereinbefore described.
12. A substrate with at least one layer of material deposited thereon by the process of any one of claims 1 to 11. INTERNATIONAL STANDARD ELECTRIC CORPORATION P.M. Conrick Authorized Agent P5/1/1466
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB08127798A GB2105729B (en) | 1981-09-15 | 1981-09-15 | Surface processing of a substrate material |
Publications (1)
Publication Number | Publication Date |
---|---|
NZ201906A true NZ201906A (en) | 1985-12-13 |
Family
ID=10524509
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NZ20190682A NZ201906A (en) | 1981-09-15 | 1982-09-14 | Surface coating plastics substrates in high intensity pulsed gas plasma |
Country Status (3)
Country | Link |
---|---|
AU (1) | AU554813B2 (en) |
GB (1) | GB2105729B (en) |
NZ (1) | NZ201906A (en) |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2144343A (en) * | 1983-08-02 | 1985-03-06 | Standard Telephones Cables Ltd | Optical fibre manufacture |
GB2155024A (en) * | 1984-03-03 | 1985-09-18 | Standard Telephones Cables Ltd | Surface treatment of plastics materials |
ATE52814T1 (en) * | 1984-03-03 | 1990-06-15 | Stc Plc | COATING PROCESS. |
EP0154483B1 (en) * | 1984-03-03 | 1989-12-27 | Stc Plc | Improved pulsed plasma process |
US4749589A (en) * | 1984-12-13 | 1988-06-07 | Stc Plc | Method of surface treatment |
GB8431422D0 (en) * | 1984-12-13 | 1985-01-23 | Standard Telephones Cables Ltd | Plasma reactor vessel |
GB8516537D0 (en) * | 1985-06-29 | 1985-07-31 | Standard Telephones Cables Ltd | Pulsed plasma apparatus |
GB2208656B (en) * | 1985-06-29 | 1990-01-17 | Stc Plc | Pulsed radio frequency plasma apparatus and process |
NZ218128A (en) * | 1985-11-01 | 1990-04-26 | Biotech Australia Pty Ltd | Etched substrate having improved binding capacity |
US4985112A (en) * | 1987-02-09 | 1991-01-15 | International Business Machines Corporation | Enhanced plasma etching |
FR2612204A1 (en) * | 1987-03-12 | 1988-09-16 | Vac Tec Syst | METHOD AND APPARATUS FOR VACUUM ELECTRIC ARC PLASMA DEPOSITION OF DECORATIVE COATINGS AND WEAR RESISTANT COATINGS |
FR2637607B1 (en) * | 1988-10-07 | 1994-06-03 | Cibie Projecteurs | PROCESS FOR MAKING ABRASION RESISTANT PLASTIC ICE AND PLASTIC ABRASION RESISTANT ICE |
DE3841730C2 (en) * | 1988-12-10 | 1997-06-19 | Widia Gmbh | Process for coating a metallic base body with a non-conductive coating material |
IT1229221B (en) * | 1989-03-31 | 1991-07-26 | Tecnopart Srl | ARTICLES FORMED OF POLYMERIC MATERIAL HAVING IMPROVED WETNESS AND ADHESIVITY AND PROCESS FOR THEIR PRODUCTION. |
GB9010000D0 (en) * | 1990-05-03 | 1990-06-27 | Stc Plc | Phosphide films |
KR930011413B1 (en) | 1990-09-25 | 1993-12-06 | 가부시키가이샤 한도오따이 에네루기 겐큐쇼 | Plasma cvd method for using pulsed waveform |
DE69218820T2 (en) * | 1991-03-07 | 1997-10-02 | Minnesota Mining & Mfg | Polymer with a cross-linked area |
US5389195A (en) * | 1991-03-07 | 1995-02-14 | Minnesota Mining And Manufacturing Company | Surface modification by accelerated plasma or ions |
DE59206558D1 (en) * | 1991-12-23 | 1996-07-18 | Balzers Hochvakuum | Process for plasma treatment of a workpiece surface, vacuum treatment plant for its execution and use of the process or plant and painted, previously plasma-treated plastic part |
US5405808A (en) * | 1993-08-16 | 1995-04-11 | Lsi Logic Corporation | Fluid-filled and gas-filled semiconductor packages |
DE69408405T2 (en) * | 1993-11-11 | 1998-08-20 | Nissin Electric Co Ltd | Plasma CVD method and device |
US6794301B2 (en) | 1995-10-13 | 2004-09-21 | Mattson Technology, Inc. | Pulsed plasma processing of semiconductor substrates |
US6253704B1 (en) | 1995-10-13 | 2001-07-03 | Mattson Technology, Inc. | Apparatus and method for pulsed plasma processing of a semiconductor substrate |
US5983828A (en) * | 1995-10-13 | 1999-11-16 | Mattson Technology, Inc. | Apparatus and method for pulsed plasma processing of a semiconductor substrate |
GB9712338D0 (en) | 1997-06-14 | 1997-08-13 | Secr Defence | Surface coatings |
JPH1180975A (en) * | 1997-09-04 | 1999-03-26 | Speedfam Co Ltd | Corrosion resistance system of plasma etching apparatus and method therefor |
ATE458261T1 (en) | 1998-12-11 | 2010-03-15 | Surface Technology Systems Plc | PLASMA TREATMENT DEVICE |
DE10029905A1 (en) * | 2000-06-17 | 2002-01-03 | Schott Auer Gmbh | Reflector, in particular for use in a motor vehicle |
DE10044841B4 (en) * | 2000-09-11 | 2006-11-30 | Osram Opto Semiconductors Gmbh | Plasma encapsulation for electronic and microelectronic components such as OLEDs and method for its production |
GB0406049D0 (en) | 2004-03-18 | 2004-04-21 | Secr Defence | Surface coatings |
DE102006012302A1 (en) | 2006-03-15 | 2007-09-27 | Seaquist Perfect Dispensing Gmbh | dispenser |
US8240518B2 (en) | 2006-05-16 | 2012-08-14 | Seaquist Perfect Dispensing Gmbh | Dispensing device and container for a cosmetic liquid |
DE102006027042A1 (en) | 2006-06-08 | 2007-12-13 | Seaquist Perfect Dispensing Gmbh | dispenser |
EP2099572B1 (en) | 2006-09-07 | 2014-07-23 | Aptar Dortmund GmbH | Dispensing device |
DE102007049614B4 (en) | 2007-03-15 | 2015-03-05 | Aptar Dortmund Gmbh | dispenser |
ES2436002T3 (en) | 2008-06-20 | 2013-12-26 | Aptar Dortmund Gmbh | Distribution device |
US8286839B2 (en) | 2008-08-12 | 2012-10-16 | Aptar Dortmund Gmbh | Dispensing device |
DE102008038654B4 (en) | 2008-08-12 | 2019-09-19 | Aptar Dortmund Gmbh | Dispensing head with swiveling valve element |
DE102009030627B4 (en) | 2009-06-25 | 2020-03-12 | Aptar Dortmund Gmbh | Valve and dispenser |
-
1981
- 1981-09-15 GB GB08127798A patent/GB2105729B/en not_active Expired
-
1982
- 1982-09-09 AU AU88154/82A patent/AU554813B2/en not_active Expired
- 1982-09-14 NZ NZ20190682A patent/NZ201906A/en unknown
Also Published As
Publication number | Publication date |
---|---|
GB2105729A (en) | 1983-03-30 |
GB2105729B (en) | 1985-06-12 |
AU554813B2 (en) | 1986-09-04 |
AU8815482A (en) | 1983-03-24 |
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