NZ191335A - Ii-v semiconductor optical waveguide device with lateral photoelectric waveguiding construction - Google Patents

Ii-v semiconductor optical waveguide device with lateral photoelectric waveguiding construction

Info

Publication number
NZ191335A
NZ191335A NZ191335A NZ19133579A NZ191335A NZ 191335 A NZ191335 A NZ 191335A NZ 191335 A NZ191335 A NZ 191335A NZ 19133579 A NZ19133579 A NZ 19133579A NZ 191335 A NZ191335 A NZ 191335A
Authority
NZ
New Zealand
Prior art keywords
waveguiding
construction
optical waveguide
semiconductor optical
waveguide device
Prior art date
Application number
NZ191335A
Other languages
English (en)
Inventor
P Kirkby
Original Assignee
Int Standard Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Int Standard Electric Corp filed Critical Int Standard Electric Corp
Publication of NZ191335A publication Critical patent/NZ191335A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
NZ191335A 1978-08-18 1979-08-17 Ii-v semiconductor optical waveguide device with lateral photoelectric waveguiding construction NZ191335A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB7833856A GB2029083B (en) 1978-08-18 1978-08-18 Semiconductor waveguide devices

Publications (1)

Publication Number Publication Date
NZ191335A true NZ191335A (en) 1981-12-15

Family

ID=10499146

Family Applications (1)

Application Number Title Priority Date Filing Date
NZ191335A NZ191335A (en) 1978-08-18 1979-08-17 Ii-v semiconductor optical waveguide device with lateral photoelectric waveguiding construction

Country Status (4)

Country Link
AU (1) AU4977879A (xx)
DE (1) DE2933149A1 (xx)
GB (1) GB2029083B (xx)
NZ (1) NZ191335A (xx)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4663761A (en) * 1983-10-12 1987-05-05 The General Electric Company, P.L.C. Semiconductor diode lasers
US4733927A (en) * 1984-11-14 1988-03-29 Hughes Aircraft Company Stress waveguides in bulk crystalline materials
KR970007142B1 (ko) * 1988-01-06 1997-05-02 텔스트라 코오포레이숀 리미티드 전류 주입 레이저
DE3903120A1 (de) * 1989-02-02 1990-08-16 Licentia Gmbh Halbleiter-wellenleiter mit spannungsangepasster wellenbegrenzung
JP2002500446A (ja) 1997-12-29 2002-01-08 コアテック・インコーポレーテッド マイクロエレクトロメカニカル的に同調可能な共焦型の垂直キャビティ表面放出レーザ及びファブリー・ペローフィルタ
US6584126B2 (en) 1998-06-26 2003-06-24 Coretek, Inc. Tunable Fabry-Perot filter and tunable vertical cavity surface emitting laser
DE102017112242B4 (de) * 2016-06-20 2019-10-24 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser
CN109361140B (zh) * 2018-12-14 2023-09-01 中国地质大学（武汉） 一种2μm耗散孤子共振锁模光纤激光器

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1530323A (en) * 1975-12-22 1978-10-25 Standard Telephones Cables Ltd Semiconductor waveguide structures

Also Published As

Publication number Publication date
DE2933149A1 (de) 1980-02-21
GB2029083A (en) 1980-03-12
GB2029083B (en) 1982-08-11
AU4977879A (en) 1980-02-21

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