AU4977879A - Semiconductor waveguide - Google Patents
Semiconductor waveguideInfo
- Publication number
- AU4977879A AU4977879A AU49778/79A AU4977879A AU4977879A AU 4977879 A AU4977879 A AU 4977879A AU 49778/79 A AU49778/79 A AU 49778/79A AU 4977879 A AU4977879 A AU 4977879A AU 4977879 A AU4977879 A AU 4977879A
- Authority
- AU
- Australia
- Prior art keywords
- semiconductor waveguide
- waveguide
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB7833856A GB2029083B (en) | 1978-08-18 | 1978-08-18 | Semiconductor waveguide devices |
GB3385678 | 1978-08-18 |
Publications (1)
Publication Number | Publication Date |
---|---|
AU4977879A true AU4977879A (en) | 1980-02-21 |
Family
ID=10499146
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU49778/79A Abandoned AU4977879A (en) | 1978-08-18 | 1979-08-10 | Semiconductor waveguide |
Country Status (4)
Country | Link |
---|---|
AU (1) | AU4977879A (en) |
DE (1) | DE2933149A1 (en) |
GB (1) | GB2029083B (en) |
NZ (1) | NZ191335A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109361140A (en) * | 2018-12-14 | 2019-02-19 | 中国地质大学(武汉) | A kind of 2 μm of dissipative solitons resonance mode locked fiber laser |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4663761A (en) * | 1983-10-12 | 1987-05-05 | The General Electric Company, P.L.C. | Semiconductor diode lasers |
US4733927A (en) * | 1984-11-14 | 1988-03-29 | Hughes Aircraft Company | Stress waveguides in bulk crystalline materials |
ATE189748T1 (en) * | 1988-01-06 | 2000-02-15 | Telstra Corp Ltd | POWER INJECTION LASER |
DE3903120A1 (en) * | 1989-02-02 | 1990-08-16 | Licentia Gmbh | Semiconductor waveguide having strain-matched wave confinement |
CA2316858A1 (en) | 1997-12-29 | 1999-07-08 | Coretek, Inc. | Microelectromechanically, tunable, confocal, vertical cavity surface emitting laser and fabry-perot filter |
US6584126B2 (en) | 1998-06-26 | 2003-06-24 | Coretek, Inc. | Tunable Fabry-Perot filter and tunable vertical cavity surface emitting laser |
DE102017112242B4 (en) * | 2016-06-20 | 2019-10-24 | Osram Opto Semiconductors Gmbh | Edge-emitting semiconductor laser |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1530323A (en) * | 1975-12-22 | 1978-10-25 | Standard Telephones Cables Ltd | Semiconductor waveguide structures |
-
1978
- 1978-08-18 GB GB7833856A patent/GB2029083B/en not_active Expired
-
1979
- 1979-08-10 AU AU49778/79A patent/AU4977879A/en not_active Abandoned
- 1979-08-16 DE DE19792933149 patent/DE2933149A1/en not_active Withdrawn
- 1979-08-17 NZ NZ191335A patent/NZ191335A/en unknown
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109361140A (en) * | 2018-12-14 | 2019-02-19 | 中国地质大学(武汉) | A kind of 2 μm of dissipative solitons resonance mode locked fiber laser |
CN109361140B (en) * | 2018-12-14 | 2023-09-01 | 中国地质大学(武汉) | 2 mu m dissipation soliton resonance mode-locked fiber laser |
Also Published As
Publication number | Publication date |
---|---|
GB2029083B (en) | 1982-08-11 |
NZ191335A (en) | 1981-12-15 |
DE2933149A1 (en) | 1980-02-21 |
GB2029083A (en) | 1980-03-12 |
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