NO930155L - Reaktiv gass for plasma-assistert etsing og fremgangsmaatefor stabil etsing av substrater over kanter - Google Patents

Reaktiv gass for plasma-assistert etsing og fremgangsmaatefor stabil etsing av substrater over kanter

Info

Publication number
NO930155L
NO930155L NO93930155A NO930155A NO930155L NO 930155 L NO930155 L NO 930155L NO 93930155 A NO93930155 A NO 93930155A NO 930155 A NO930155 A NO 930155A NO 930155 L NO930155 L NO 930155L
Authority
NO
Norway
Prior art keywords
cutting
substrates
plasma
procedure
edge
Prior art date
Application number
NO93930155A
Other languages
English (en)
Norwegian (no)
Other versions
NO930155D0 (no
Inventor
Lynn D Bollinger
George N Steinberg
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of NO930155D0 publication Critical patent/NO930155D0/no
Publication of NO930155L publication Critical patent/NO930155L/no

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
NO93930155A 1992-01-31 1993-01-18 Reaktiv gass for plasma-assistert etsing og fremgangsmaatefor stabil etsing av substrater over kanter NO930155L (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US82999592A 1992-01-31 1992-01-31

Publications (2)

Publication Number Publication Date
NO930155D0 NO930155D0 (no) 1993-01-18
NO930155L true NO930155L (no) 1993-08-02

Family

ID=25256069

Family Applications (1)

Application Number Title Priority Date Filing Date
NO93930155A NO930155L (no) 1992-01-31 1993-01-18 Reaktiv gass for plasma-assistert etsing og fremgangsmaatefor stabil etsing av substrater over kanter

Country Status (4)

Country Link
EP (1) EP0554079A2 (de)
JP (1) JPH05339762A (de)
IL (1) IL104268A0 (de)
NO (1) NO930155L (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3612158B2 (ja) * 1996-11-18 2005-01-19 スピードファム株式会社 プラズマエッチング方法及びその装置
JPH11302878A (ja) * 1998-04-21 1999-11-02 Speedfam-Ipec Co Ltd ウエハ平坦化方法，ウエハ平坦化システム及びウエハ

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5460236A (en) * 1977-10-21 1979-05-15 Mitsubishi Electric Corp Etching method
JPS6074349A (ja) * 1983-09-30 1985-04-26 Hitachi Maxell Ltd 酸化第二銀電池
JPS6482533A (en) * 1987-09-25 1989-03-28 Toshiba Corp Dry etching
JPH02246113A (ja) * 1989-03-17 1990-10-01 Matsushita Electric Ind Co Ltd ドライエッチング装置

Also Published As

Publication number Publication date
EP0554079A2 (de) 1993-08-04
JPH05339762A (ja) 1993-12-21
NO930155D0 (no) 1993-01-18
IL104268A0 (en) 1993-05-13

Similar Documents

Publication Publication Date Title
AU7832194A (en) Gas permeable bioreactor and method of use
IL67460A0 (en) Single crystal articles particularly useful for making gas turbine components and methods of making same
AU2407492A (en) Compounds and methods for inhibition of hiv and related viruses
DK243689A (da) Plantevaekstregulerende middel og fremgangsmaade til styring af plantevaekst
AU5850894A (en) Novel agents for inhibition of hiv infectivity and use therefor
HU902082D0 (en) Fungicide preparations containing inhibitor of crystallization
NO930155L (no) Reaktiv gass for plasma-assistert etsing og fremgangsmaatefor stabil etsing av substrater over kanter
AU1393295A (en) Purification of natural gas
DK571289D0 (da) Fremgangsmaade til behandling af spildgas
AU3302193A (en) Process and device for growing and keeping plants having little or no capability of standing on their own
NO924630L (no) Fremgangsmaate og innretning for dyrking og utplanting av stiklinger
DK299989A (da) Fremgangsmaade og anlaeg til fjernelse af asbestholdige materialer
AU2491095A (en) Compositions and methods for inhibiting growth or replication of viruses
NO940153D0 (no) Fremgangsmaate og materiale for aa kontrollere veksten av mikroorga nismer
AU2910595A (en) Glutathione n-hydroxycarbamoyl thioesters and method of inhibiting neoplastic growth
AU652171B2 (en) Inactivation of gene transcription in plants using altered transcriptional activators
DK476188A (da) Anlaeg til belaegning og pillering af kornformige materialer
GB9000869D0 (en) Vapour of gas containing plant
AU6225294A (en) Method and means for planting of tree plants
AU8930191A (en) Methods for protection and treatment of plants exposed to chilling temperatures
AU2623597A (en) Preservation of hop plants and plant material
DK560988D0 (da) Emne til optimering af plantekulturers beskyttelse og overlevelse
NO921011D0 (no) Fremgangsmaate for fjerning av belegg og middel for fremgangsmaatens utfoerelse
AU4844797A (en) Method for preparation and transplantation of volute grafts and surgical instrument therefor
AU1774997A (en) A portable apparatus for containing and controlling the environment and fertilisation of vegetation