NO900847L - Innretning for dosering av en silisiumsmelte. - Google Patents
Innretning for dosering av en silisiumsmelte.Info
- Publication number
- NO900847L NO900847L NO90900847A NO900847A NO900847L NO 900847 L NO900847 L NO 900847L NO 90900847 A NO90900847 A NO 90900847A NO 900847 A NO900847 A NO 900847A NO 900847 L NO900847 L NO 900847L
- Authority
- NO
- Norway
- Prior art keywords
- dosing
- silicide
- melt
- silicide melt
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D41/00—Casting melt-holding vessels, e.g. ladles, tundishes, cups or the like
- B22D41/14—Closures
- B22D41/16—Closures stopper-rod type, i.e. a stopper-rod being positioned downwardly through the vessel and the metal therein, for selective registry with the pouring opening
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Fuses (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE3907916A DE3907916A1 (de) | 1989-03-11 | 1989-03-11 | Vorrichtung zum dosieren von siliciumschmelzen |
Publications (4)
Publication Number | Publication Date |
---|---|
NO900847D0 NO900847D0 (no) | 1990-02-22 |
NO900847L true NO900847L (no) | 1990-09-12 |
NO173810B NO173810B (no) | 1993-11-01 |
NO173810C NO173810C (no) | 1994-02-09 |
Family
ID=6376092
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NO900847A NO173810C (no) | 1989-03-11 | 1990-02-22 | Anordning for dosering av en silisiumsmelte |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0387574B1 (no) |
DE (2) | DE3907916A1 (no) |
NO (1) | NO173810C (no) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005002633A1 (de) * | 2005-01-13 | 2006-07-20 | Deutsches Zentrum für Luft- und Raumfahrt e.V. | Verfahren und Vorrichtung zur Carbidbildner-Infiltration eines porösen kohlenstoffhaltigen Vorkörpers |
DE102011115081B4 (de) * | 2011-09-19 | 2017-08-31 | Baufeld-Mineralölraffinerie GmbH | Verfahren zur Gewinnung von Solarsilizium aus Sägeabfällen |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2893847A (en) * | 1954-02-23 | 1959-07-07 | Siemens Ag | Apparatus for preparing rod-shaped, crystalline bodies, particularly semiconductor bodies |
FR2430917A1 (fr) * | 1978-07-11 | 1980-02-08 | Comp Generale Electricite | Procede et dispositif d'elaboration de silicium polycristallin |
US4219139A (en) * | 1978-11-01 | 1980-08-26 | Albany International Corp. | Bottom pouring crucible |
DE2925679A1 (de) * | 1979-06-26 | 1981-01-22 | Heliotronic Gmbh | Verfahren zur herstellung von siliciumstaeben |
US4561486A (en) * | 1981-04-30 | 1985-12-31 | Hoxan Corporation | Method for fabricating polycrystalline silicon wafer |
JPS61236604A (ja) * | 1985-04-11 | 1986-10-21 | Toshiba Ceramics Co Ltd | β−Si↓3N↓4の合成方法 |
DE3629231A1 (de) * | 1986-08-28 | 1988-03-03 | Heliotronic Gmbh | Verfahren zum aufschmelzen von in einen schmelztiegel chargiertem siliciumpulver und schmelztiegel zur durchfuehrung des verfahrens |
DE3639335A1 (de) * | 1986-11-18 | 1988-05-26 | Bayer Ag | Gegenueber metall- und salzschmelzen resistente werkstoffe, ihre herstellung und deren verwendung |
-
1989
- 1989-03-11 DE DE3907916A patent/DE3907916A1/de not_active Withdrawn
-
1990
- 1990-02-22 NO NO900847A patent/NO173810C/no unknown
- 1990-02-25 EP EP90103638A patent/EP0387574B1/de not_active Expired - Lifetime
- 1990-02-25 DE DE9090103638T patent/DE59001583D1/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
NO900847D0 (no) | 1990-02-22 |
EP0387574B1 (de) | 1993-06-02 |
EP0387574A1 (de) | 1990-09-19 |
NO173810B (no) | 1993-11-01 |
NO173810C (no) | 1994-02-09 |
DE3907916A1 (de) | 1990-09-13 |
DE59001583D1 (de) | 1993-07-08 |
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