NO900847L - Innretning for dosering av en silisiumsmelte. - Google Patents

Innretning for dosering av en silisiumsmelte.

Info

Publication number
NO900847L
NO900847L NO90900847A NO900847A NO900847L NO 900847 L NO900847 L NO 900847L NO 90900847 A NO90900847 A NO 90900847A NO 900847 A NO900847 A NO 900847A NO 900847 L NO900847 L NO 900847L
Authority
NO
Norway
Prior art keywords
dosing
silicide
melt
silicide melt
Prior art date
Application number
NO90900847A
Other languages
English (en)
Other versions
NO900847D0 (no
NO173810B (no
NO173810C (no
Inventor
Horst Lange
Klaus Gebauer
Original Assignee
Bayer Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bayer Ag filed Critical Bayer Ag
Publication of NO900847D0 publication Critical patent/NO900847D0/no
Publication of NO900847L publication Critical patent/NO900847L/no
Publication of NO173810B publication Critical patent/NO173810B/no
Publication of NO173810C publication Critical patent/NO173810C/no

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22DCASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D41/00Casting melt-holding vessels, e.g. ladles, tundishes, cups or the like
    • B22D41/14Closures
    • B22D41/16Closures stopper-rod type, i.e. a stopper-rod being positioned downwardly through the vessel and the metal therein, for selective registry with the pouring opening
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002Crucibles or containers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Fuses (AREA)
NO900847A 1989-03-11 1990-02-22 Anordning for dosering av en silisiumsmelte NO173810C (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE3907916A DE3907916A1 (de) 1989-03-11 1989-03-11 Vorrichtung zum dosieren von siliciumschmelzen

Publications (4)

Publication Number Publication Date
NO900847D0 NO900847D0 (no) 1990-02-22
NO900847L true NO900847L (no) 1990-09-12
NO173810B NO173810B (no) 1993-11-01
NO173810C NO173810C (no) 1994-02-09

Family

ID=6376092

Family Applications (1)

Application Number Title Priority Date Filing Date
NO900847A NO173810C (no) 1989-03-11 1990-02-22 Anordning for dosering av en silisiumsmelte

Country Status (3)

Country Link
EP (1) EP0387574B1 (no)
DE (2) DE3907916A1 (no)
NO (1) NO173810C (no)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005002633A1 (de) * 2005-01-13 2006-07-20 Deutsches Zentrum für Luft- und Raumfahrt e.V. Verfahren und Vorrichtung zur Carbidbildner-Infiltration eines porösen kohlenstoffhaltigen Vorkörpers
DE102011115081B4 (de) * 2011-09-19 2017-08-31 Baufeld-Mineralölraffinerie GmbH Verfahren zur Gewinnung von Solarsilizium aus Sägeabfällen

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2893847A (en) * 1954-02-23 1959-07-07 Siemens Ag Apparatus for preparing rod-shaped, crystalline bodies, particularly semiconductor bodies
FR2430917A1 (fr) * 1978-07-11 1980-02-08 Comp Generale Electricite Procede et dispositif d'elaboration de silicium polycristallin
US4219139A (en) * 1978-11-01 1980-08-26 Albany International Corp. Bottom pouring crucible
DE2925679A1 (de) * 1979-06-26 1981-01-22 Heliotronic Gmbh Verfahren zur herstellung von siliciumstaeben
US4561486A (en) * 1981-04-30 1985-12-31 Hoxan Corporation Method for fabricating polycrystalline silicon wafer
JPS61236604A (ja) * 1985-04-11 1986-10-21 Toshiba Ceramics Co Ltd β−Si↓3N↓4の合成方法
DE3629231A1 (de) * 1986-08-28 1988-03-03 Heliotronic Gmbh Verfahren zum aufschmelzen von in einen schmelztiegel chargiertem siliciumpulver und schmelztiegel zur durchfuehrung des verfahrens
DE3639335A1 (de) * 1986-11-18 1988-05-26 Bayer Ag Gegenueber metall- und salzschmelzen resistente werkstoffe, ihre herstellung und deren verwendung

Also Published As

Publication number Publication date
NO900847D0 (no) 1990-02-22
EP0387574B1 (de) 1993-06-02
EP0387574A1 (de) 1990-09-19
NO173810B (no) 1993-11-01
NO173810C (no) 1994-02-09
DE3907916A1 (de) 1990-09-13
DE59001583D1 (de) 1993-07-08

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