NO761442L - - Google Patents
Info
- Publication number
- NO761442L NO761442L NO761442A NO761442A NO761442L NO 761442 L NO761442 L NO 761442L NO 761442 A NO761442 A NO 761442A NO 761442 A NO761442 A NO 761442A NO 761442 L NO761442 L NO 761442L
- Authority
- NO
- Norway
- Prior art keywords
- furnace
- electric resistance
- furnaces
- rectifier
- supplied
- Prior art date
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 9
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 239000000571 coke Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 235000002639 sodium chloride Nutrition 0.000 claims description 3
- 239000011780 sodium chloride Substances 0.000 claims description 3
- 239000006004 Quartz sand Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 239000004020 conductor Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 210000005036 nerve Anatomy 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000007306 turnover Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/0019—Circuit arrangements
- H05B3/0023—Circuit arrangements for heating by passing the current directly across the material to be heated
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
- C01B32/963—Preparation from compounds containing silicon
- C01B32/97—Preparation from SiO or SiO2
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Carbon And Carbon Compounds (AREA)
- Ceramic Products (AREA)
- Resistance Heating (AREA)
- Furnace Details (AREA)
Description
Det er kjent å fremstille silisiumkarbid i teknisk målestokk ved hjelp av elektriske motstandsovner ved den fremgangsmåte som ble utviklet av Acheson i slutten av det 19.århundre. It is known to produce silicon carbide on a technical scale using electric resistance furnaces by the method developed by Acheson at the end of the 19th century.
En ovn av denne art består av to innbyrdes motstående stasjonære ildfaste murer, hvorigjennom elektroder som tilfores vekselstrom, rager inn i ovnen. De ildfaste sidevegger er beregnet på å A furnace of this type consists of two opposite stationary refractory walls, through which electrodes that are supplied with alternating current project into the furnace. The refractory side walls are designed to
rives ned etter avslutning av brenningsprosessen for uttak av ovnsinnholdet. torn down after completion of the firing process for removal of the kiln contents.
Resultantligningen for fremstilling av silisiumkarbid har fSigende sammensetning: The resulting equation for the production of silicon carbide has the following composition:
Den anvendte råblanding består av kornet kvarts og koks, fortrinnsvis blandet med sagspon og kokesalt. Andelene av hovedkomponentene i råblandingen tilsvarer det stokiometriske forhold med et lite overskudd av koks. The raw mixture used consists of granular quartz and coke, preferably mixed with sawdust and common salt. The proportions of the main components in the raw mixture correspond to the stoichiometric ratio with a small excess of coke.
Ovnen fylles så til nivå med elektrodene med den angitte råblanding. Deretter forbindes elektrodeblokkene med en varme-leder (nerve) bestående av en koks/grafit-blanding, og resten av råblandingen innfores i ovnen. Omsetningsprosessen er avsluttet etter 25 til 36 timer. Deretter tillates en avkjolingstid på flere dager. Ovnens sidevegger demonteres så og den dannede sylinderformede skorpe adskilles fra den ikke omsatte del av råblandingen. The furnace is then filled to the level of the electrodes with the specified raw mixture. The electrode blocks are then connected with a heat conductor (nerve) consisting of a coke/graphite mixture, and the rest of the raw mixture is fed into the furnace. The turnover process is completed after 25 to 36 hours. A cooling-off period of several days is then allowed. The side walls of the oven are then dismantled and the formed cylindrical crust is separated from the unreacted part of the raw mixture.
Under denne fremgangsmåte oppstår fint utformede SiC-krystallerDuring this process, finely shaped SiC crystals are formed
i temperaturområdet fra ca. 2000°C til ca. 2300°C. Over ca.2300°C spaltes SiC, og det silisium som frembringes ved spaltingen, slår seg ned i ovnens koldeste soner, mens det gjenværende forholdsvis rene grafit forurenser det fremstilte silisiumkarbid. in the temperature range from approx. 2000°C to approx. 2300°C. Above about 2300°C, SiC splits, and the silicon produced by the splitting settles in the coldest zones of the furnace, while the remaining relatively pure graphite contaminates the silicon carbide produced.
Ved direkte motstandsoppvarming påtrykkes elektrisk spenning direkte på varmelederen. Vanligvis er denne spenning meget lav og den frembragte strSm meget hSy. Hvis det imidlertid onskes jevnt fordelt oppvarming, og dette tilstrebes alltid, så må varmegodsets motstand være jevnt fordelt over hele strSmbanens tverrsnitt. Det må således ikke forekomme uregelmessigheter hverken i sammenfSyninger eller i tverrsnitt, og begge disse forutsetninger er vanskelige å oppfylle. Kontaktsporsmålet utgjSr?;en ytterligere betraktelig vanskelighet. Det forlanges således ikke bare en meget god elektrisk kontakt med minst In direct resistance heating, electrical voltage is applied directly to the heating conductor. Usually this voltage is very low and the produced strSm very hSy. If, however, evenly distributed heating is desired, and this is always strived for, then the resistance of the heating material must be evenly distributed over the entire cross-section of the conductor. Thus, there must be no irregularities either in joints or in cross-sections, and both of these conditions are difficult to fulfill. The contact trace goal represents a further considerable difficulty. It is therefore not only a very good electrical contact with at least that is required
mulig overgangsmotstand, men også en jevnt fordelt strSmovergang. Ved de hSye foreliggende stromstyrker på noen tusen amper forer en overgangsmotstand på bare brSkdeler av en ohm .til betraktelig varmeutvikling, som må bortfores ved hjelp av særlig kjSling av kontaktstedet og inngår som et tap i energibalansen. Ved anvendelse av vekselstrSm, og bare denne strSmart kommer på tale i praksis, da den alene på enkel måte tillater uttak av de nSdvendige store strSmstyrker fra nettet, må det også tas hensyn til virkningen av de frembragte sterke magnetfelt,(Ullmann 1951, bind 1, side 191) . possible transition resistance, but also an evenly distributed current transition. At the high present current strengths of a few thousand amperes, a transition resistance of only fractions of an ohm leads to considerable heat development, which must be removed by means of special heating of the contact point and is included as a loss in the energy balance. When using alternating current, and only this current comes into question in practice, as it alone allows the withdrawal of the necessary large currents from the network in a simple way, the effect of the strong magnetic fields produced must also be taken into account (Ullmann 1951, volume 1 , page 191) .
Oppnåelse av god varmeutnyttelse og dermed hSyt energiutbytte forutsetter minst mulig blind-effekt (Cosi/*) . Denne, forutsetning er imidlertid bare i meget utilstrekkelig grad oppfylt i de kjente SiC-mostandsovner. For å holde; . nevnte blind-effekt så lav som mulig, innkobles på«:kjent måte kondensatorer. Men også ved forkoblede kondensatorer vil det for sådanne ovner foreligge grenser med hensyn til tverrsnitt og lengdeutstrekning, da blind-effekten Sker raskt med stigende tverrsnitt og lengde. ;For det meste kobles tre sådanne ovner i parallell for å oppnå symmetrisk belastning av generatorer og nett. ;Det er imidlertid nå funnet at det kan oppnås likeartet ovnsdrift og forhoyet energiutbytte (liten blind-effekt) også ved ovner med store dimensjoner, når ovnene drives med likestrom. ;På denne bakgrunn går foreliggende oppfinnelse ut på fremstilling av silisiumkarbid ved omsetning av kvarts-sand med koks, fortrinnsvis i nærvær av kokesalt og sagspon i elektriske motstandsovner, idet oppfinnelsens særtrekk består i at nevnte omsetning utfores i en. elektrisk motstandsovn hvis varmekjerne tilfores likestrom. ;Hensiktsmessig utfores dette i praksis på den måte at det;mellom nett og ovn innkobles en likeretterenhet og transformator, fortrinnsvis en forflyttbar sammenstilling av Si-likerettede og en transformator. Ved hjelp av en sådan anordning kan strom fra alle tre faser i et trefasenett likerettes. Ved at likeretter/ transformator-enheten er forflyttbar, kan denne enhet bringes helt frem til vedkommende ovner. Tap på grunn av lange tilledninger bortfaller, og ensidig belastning av nettet forekommer ikke. ;En ytterligere fordel består i at en anordning a* denne art er lett å regulere og så-ledes bare små energitap forekommer. Achieving good heat utilization and thus high energy yield requires the least possible blind effect (Cosi/*) . However, this condition is only met to a very insufficient extent in the known SiC resistance furnaces. To hold; . mentioned blind effect as low as possible, capacitors are connected in the known manner. But also with pre-connected condensers, there will be limits for such ovens with regard to cross-section and length extension, as the blind effect occurs quickly with increasing cross-section and length. For the most part, three such furnaces are connected in parallel to achieve symmetrical loading of generators and grids. However, it has now been found that similar furnace operation and increased energy yield (small blind effect) can also be achieved with furnaces with large dimensions, when the furnaces are operated with direct current. Against this background, the present invention is concerned with the production of silicon carbide by reacting quartz sand with coke, preferably in the presence of common salt and sawdust in electric resistance furnaces, the distinctive feature of the invention being that said reaction is carried out in a. electric resistance furnace whose heating core is supplied with direct current. Appropriately, this is carried out in practice in such a way that a rectifier unit and transformer, preferably a movable assembly of Si rectifiers and a transformer, are connected between the mains and the oven. With the help of such a device, current from all three phases in a three-phase network can be rectified. As the rectifier/transformer unit is movable, this unit can be brought all the way to the respective ovens. Losses due to long connections are eliminated, and one-sided loading of the network does not occur. A further advantage consists in the fact that a device of this type is easy to regulate and thus only small energy losses occur.
Den omtalte likeretter/tranformator-enhet utfores hensiktsmessig programmerbar for åu styres av et forut oppstilt program som tilsvarer ovnens vanlige energiopptak. The mentioned rectifier/transformer unit is suitably designed to be programmable in order to be controlled by a prearranged program that corresponds to the oven's usual energy consumption.
Ved et utforelseseksempel i henhold til foreliggende oppfinnelse ble det i motstandovner drevet med ca. 80 KA oppnådd en ydelse på 350 til 400 kW per meter.~ovnslengde. Produktutbyttet belop In an exemplary embodiment according to the present invention, resistance furnaces were operated with approx. 80 KA achieved a performance of 350 to 400 kW per meter.~furnace length. Product yield amount
seg herunder til ca. 40 kg fint krystallisert SiC per time og meter ovnslengde. themselves below to approx. 40 kg of finely crystallized SiC per hour and meter of furnace length.
Claims (3)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH552575A CH595283A5 (en) | 1975-04-29 | 1975-04-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
NO761442L true NO761442L (en) | 1976-11-01 |
Family
ID=4295077
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NO761442A NO761442L (en) | 1975-04-29 | 1976-04-27 |
Country Status (11)
Country | Link |
---|---|
BE (1) | BE841291A (en) |
CA (1) | CA1082422A (en) |
CH (1) | CH595283A5 (en) |
DE (1) | DE2617647A1 (en) |
ES (1) | ES447420A1 (en) |
FR (1) | FR2309469A1 (en) |
GB (1) | GB1476916A (en) |
IT (1) | IT1058237B (en) |
NL (1) | NL182394C (en) |
NO (1) | NO761442L (en) |
ZA (1) | ZA762478B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0171858A3 (en) * | 1984-08-14 | 1989-06-14 | AGIP S.p.A. | Method of making silicon carbide and coatings of silicon carbide on carbonaceous substrates |
DE4226867C1 (en) * | 1992-08-13 | 1993-11-25 | Kempten Elektroschmelz Gmbh | Resistance heated open furnace for silicon carbide prodn. - has multi-limb resistive core connected to poly phase supply |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR327189A (en) * | 1902-12-09 | 1903-06-16 | Acheson Edward Goodrich | Improved method and apparatus for reduction of compounds by electric heating |
GB383540A (en) * | 1931-05-11 | 1932-11-17 | Aurele Louis Mingard | A process for manufacturing hard objects of carbon silicide or like substances |
US2005956A (en) * | 1931-12-02 | 1935-06-25 | Norton Co | Method of making abrasive metal carbides and an apparatus therefor |
FR887377A (en) * | 1941-11-26 | 1943-11-11 | Deutsche Edelstahlwerke Ag | Method and device for obtaining reactions between metal oxides or oxidic ores and coal |
-
1975
- 1975-04-29 CH CH552575A patent/CH595283A5/xx not_active IP Right Cessation
-
1976
- 1976-04-22 DE DE19762617647 patent/DE2617647A1/en not_active Ceased
- 1976-04-22 NL NLAANVRAGE7604277,A patent/NL182394C/en not_active IP Right Cessation
- 1976-04-26 ZA ZA762478A patent/ZA762478B/en unknown
- 1976-04-27 GB GB1700776A patent/GB1476916A/en not_active Expired
- 1976-04-27 IT IT49204/76A patent/IT1058237B/en active
- 1976-04-27 NO NO761442A patent/NO761442L/no unknown
- 1976-04-28 ES ES447420A patent/ES447420A1/en not_active Expired
- 1976-04-29 BE BE166582A patent/BE841291A/en not_active IP Right Cessation
- 1976-04-29 CA CA251,448A patent/CA1082422A/en not_active Expired
- 1976-04-29 FR FR7612762A patent/FR2309469A1/en active Granted
Also Published As
Publication number | Publication date |
---|---|
GB1476916A (en) | 1977-06-16 |
ES447420A1 (en) | 1977-07-01 |
CH595283A5 (en) | 1978-02-15 |
DE2617647A1 (en) | 1976-11-11 |
BE841291A (en) | 1976-10-29 |
ZA762478B (en) | 1977-04-27 |
IT1058237B (en) | 1982-04-10 |
NL7604277A (en) | 1976-11-02 |
CA1082422A (en) | 1980-07-29 |
FR2309469A1 (en) | 1976-11-26 |
NL182394C (en) | 1988-03-01 |
FR2309469B1 (en) | 1981-09-25 |
NL182394B (en) | 1987-10-01 |
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