NO2340589T3 - - Google Patents
Info
- Publication number
- NO2340589T3 NO2340589T3 NO09822404A NO09822404A NO2340589T3 NO 2340589 T3 NO2340589 T3 NO 2340589T3 NO 09822404 A NO09822404 A NO 09822404A NO 09822404 A NO09822404 A NO 09822404A NO 2340589 T3 NO2340589 T3 NO 2340589T3
- Authority
- NO
- Norway
Links
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3422—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising type-II quantum wells or superlattices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3077—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure plane dependent doping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3415—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers containing details related to carrier capture times into wells or barriers
- H01S5/3416—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers containing details related to carrier capture times into wells or barriers tunneling through barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10669308P | 2008-10-20 | 2008-10-20 | |
US12/402,627 US8125706B2 (en) | 2008-10-20 | 2009-03-12 | High-temperature interband cascade lasers |
PCT/US2009/059769 WO2010047948A1 (en) | 2008-10-20 | 2009-10-07 | High-temperature interband cascade lasers |
Publications (1)
Publication Number | Publication Date |
---|---|
NO2340589T3 true NO2340589T3 (no) | 2018-08-11 |
Family
ID=42108448
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NO09822404A NO2340589T3 (no) | 2008-10-20 | 2009-10-07 |
Country Status (7)
Country | Link |
---|---|
US (2) | US8125706B2 (no) |
EP (2) | EP2511995B1 (no) |
JP (1) | JP5718234B2 (no) |
CA (1) | CA2736265A1 (no) |
NO (1) | NO2340589T3 (no) |
PL (2) | PL2511995T3 (no) |
WO (1) | WO2010047948A1 (no) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8125706B2 (en) * | 2008-10-20 | 2012-02-28 | The United States Of America As Represented By The Secretary Of The Navy | High-temperature interband cascade lasers |
US8929417B2 (en) | 2009-12-21 | 2015-01-06 | The Board Of Regents Of The University Of Oklahoma | Semiconductor interband lasers and method of forming |
US8432609B2 (en) * | 2010-01-20 | 2013-04-30 | Northrop Grumman Systems Corporation | Photo-pumped semiconductor optical amplifier |
US8290011B2 (en) | 2010-11-22 | 2012-10-16 | The United States Of America, As Represented By The Secretary Of The Navy | Interband cascade lasers |
US8798111B2 (en) | 2011-04-20 | 2014-08-05 | The United States Of America, As Represented By The Secretary Of The Navy | Interband cascade lasers with engineered carrier densities |
DE102011103143B4 (de) | 2011-05-25 | 2014-05-22 | Julius-Maximilians-Universität Würzburg | Interbandkaskadenlaser-Verstärkermedium |
DE102011116232B4 (de) * | 2011-10-17 | 2020-04-09 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung |
DE102011117278B4 (de) * | 2011-10-31 | 2014-07-10 | Julius-Maximilians-Universität Würzburg | Interbandkaskadenlaser-Verstärkermedium |
CN102611003B (zh) * | 2012-04-11 | 2014-01-08 | 中国科学院半导体研究所 | 量子点级联激光器 |
KR20140022136A (ko) * | 2012-08-13 | 2014-02-24 | 삼성전자주식회사 | 반도체 발광소자 |
US9337617B2 (en) | 2014-02-24 | 2016-05-10 | The Board Of Regents Of The University Of Oklahoma | Tunable semiconductor lasers |
DE102014106209B3 (de) * | 2014-05-05 | 2015-08-27 | Nanoplus Nanosystems And Technologies Gmbh | Interbandkaskadenlaser sowie Verfahren zur Herstellung eines Interbandkaskadenlasers umfassend ein Rückkopplungselement |
JP2018518053A (ja) | 2015-06-05 | 2018-07-05 | ザ ガバメント オブ ザ ユナイテッド ステイツ オブ アメリカ,アズ リプレゼンテッド バイ ザ セクレタリー オブ ザ ネイビー | 損失を低減するための低フィルファクタのトップコンタクトを有するインターバンドカスケードレーザ |
FR3048561B1 (fr) * | 2016-03-03 | 2019-03-15 | Centre National De La Recherche Scientifique | Laser a cascade quantique. |
EP3476014A4 (en) | 2016-06-24 | 2020-02-05 | The Government Of The United States Of America As The Secretary of The Navy | LOW INDEX GUIDANCE INTERBAND CASCADE LASERS HAVING UNDEVELOPED TOP COATING LAYER OR THIN TOP COATING LAYER |
WO2019193487A1 (en) * | 2018-04-06 | 2019-10-10 | Silanna UV Technologies Pte Ltd | Semiconductor structure with chirp layer |
JP7407546B2 (ja) * | 2019-09-24 | 2024-01-04 | 株式会社東芝 | 量子カスケードレーザ |
GB202002785D0 (en) * | 2020-02-27 | 2020-04-15 | Univ Surrey | Reducing auger recombination in semiconductor optical devices |
CN112582879A (zh) * | 2020-12-11 | 2021-03-30 | 睿创微纳(无锡)技术有限公司 | 红外半导体激光器及其制备方法 |
WO2023133392A2 (en) * | 2022-01-04 | 2023-07-13 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Weak index guiding of interband cascade lasers |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5457709A (en) | 1994-04-04 | 1995-10-10 | At&T Ipm Corp. | Unipolar semiconductor laser |
US5588015A (en) * | 1995-08-22 | 1996-12-24 | University Of Houston | Light emitting devices based on interband transitions in type-II quantum well heterostructures |
US5793787A (en) * | 1996-01-16 | 1998-08-11 | The United States Of America As Represented By The Secretary Of The Navy | Type II quantum well laser with enhanced optical matrix |
US5799026A (en) * | 1996-11-01 | 1998-08-25 | The United States Of America As Represented By The Secretary Of The Navy | Interband quantum well cascade laser, with a blocking quantum well for improved quantum efficiency |
US6404791B1 (en) * | 1999-10-07 | 2002-06-11 | Maxion Technologies, Inc. | Parallel cascade quantum well light emitting device |
JP3778260B2 (ja) * | 2000-08-16 | 2006-05-24 | 日本電気株式会社 | 半導体レーザとこれを用いたデジタル光通信システムと方法 |
US7485476B2 (en) * | 2003-08-06 | 2009-02-03 | Yissum Research Development Company Of The Hebrew University Of Jerusalem | Terahertz radiating device based on semiconductor coupled quantum wells |
US20070008999A1 (en) * | 2004-06-07 | 2007-01-11 | Maxion Technologies, Inc. | Broadened waveguide for interband cascade lasers |
US7282777B1 (en) * | 2004-09-27 | 2007-10-16 | California Institute Of Technology | Interband cascade detectors |
US7405552B2 (en) * | 2006-01-04 | 2008-07-29 | Micron Technology, Inc. | Semiconductor temperature sensor with high sensitivity |
US20080304531A1 (en) * | 2007-02-20 | 2008-12-11 | California Institute Of Technology | Integrated broadband quantum cascade laser |
US8125706B2 (en) * | 2008-10-20 | 2012-02-28 | The United States Of America As Represented By The Secretary Of The Navy | High-temperature interband cascade lasers |
-
2009
- 2009-03-12 US US12/402,627 patent/US8125706B2/en active Active
- 2009-10-07 PL PL12167206T patent/PL2511995T3/pl unknown
- 2009-10-07 EP EP12167206.7A patent/EP2511995B1/en active Active
- 2009-10-07 JP JP2011533218A patent/JP5718234B2/ja active Active
- 2009-10-07 WO PCT/US2009/059769 patent/WO2010047948A1/en active Application Filing
- 2009-10-07 EP EP09822404.1A patent/EP2340589B1/en active Active
- 2009-10-07 PL PL09822404T patent/PL2340589T3/pl unknown
- 2009-10-07 CA CA2736265A patent/CA2736265A1/en not_active Abandoned
- 2009-10-07 NO NO09822404A patent/NO2340589T3/no unknown
-
2012
- 2012-01-19 US US13/353,770 patent/US8493654B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
EP2511995A2 (en) | 2012-10-17 |
EP2340589B1 (en) | 2018-03-14 |
WO2010047948A1 (en) | 2010-04-29 |
PL2511995T3 (pl) | 2016-07-29 |
PL2340589T3 (pl) | 2018-10-31 |
JP2012507142A (ja) | 2012-03-22 |
US20100097690A1 (en) | 2010-04-22 |
CA2736265A1 (en) | 2010-04-20 |
EP2511995B1 (en) | 2016-01-20 |
JP5718234B2 (ja) | 2015-05-13 |
EP2340589A4 (en) | 2014-03-05 |
US20120127564A1 (en) | 2012-05-24 |
EP2340589A1 (en) | 2011-07-06 |
US8493654B2 (en) | 2013-07-23 |
EP2511995A3 (en) | 2014-03-05 |
US8125706B2 (en) | 2012-02-28 |