NO2340589T3 - - Google Patents

Info

Publication number
NO2340589T3
NO2340589T3 NO09822404A NO09822404A NO2340589T3 NO 2340589 T3 NO2340589 T3 NO 2340589T3 NO 09822404 A NO09822404 A NO 09822404A NO 09822404 A NO09822404 A NO 09822404A NO 2340589 T3 NO2340589 T3 NO 2340589T3
Authority
NO
Norway
Application number
NO09822404A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NO2340589T3 publication Critical patent/NO2340589T3/no

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3422—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising type-II quantum wells or superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3077—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure plane dependent doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3415—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers containing details related to carrier capture times into wells or barriers
    • H01S5/3416—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers containing details related to carrier capture times into wells or barriers tunneling through barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
NO09822404A 2008-10-20 2009-10-07 NO2340589T3 (no)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10669308P 2008-10-20 2008-10-20
US12/402,627 US8125706B2 (en) 2008-10-20 2009-03-12 High-temperature interband cascade lasers
PCT/US2009/059769 WO2010047948A1 (en) 2008-10-20 2009-10-07 High-temperature interband cascade lasers

Publications (1)

Publication Number Publication Date
NO2340589T3 true NO2340589T3 (no) 2018-08-11

Family

ID=42108448

Family Applications (1)

Application Number Title Priority Date Filing Date
NO09822404A NO2340589T3 (no) 2008-10-20 2009-10-07

Country Status (7)

Country Link
US (2) US8125706B2 (no)
EP (2) EP2340589B1 (no)
JP (1) JP5718234B2 (no)
CA (1) CA2736265A1 (no)
NO (1) NO2340589T3 (no)
PL (2) PL2511995T3 (no)
WO (1) WO2010047948A1 (no)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8125706B2 (en) * 2008-10-20 2012-02-28 The United States Of America As Represented By The Secretary Of The Navy High-temperature interband cascade lasers
US8929417B2 (en) 2009-12-21 2015-01-06 The Board Of Regents Of The University Of Oklahoma Semiconductor interband lasers and method of forming
US8432609B2 (en) * 2010-01-20 2013-04-30 Northrop Grumman Systems Corporation Photo-pumped semiconductor optical amplifier
US8290011B2 (en) * 2010-11-22 2012-10-16 The United States Of America, As Represented By The Secretary Of The Navy Interband cascade lasers
PL2702648T3 (pl) 2011-04-20 2018-09-28 The Government Of The United States Of America As Represented By The Secretary Of The Navy Międzypasmowe lasery kaskadowe z projektowanymi gęstościami nośnika
DE102011103143B4 (de) 2011-05-25 2014-05-22 Julius-Maximilians-Universität Würzburg Interbandkaskadenlaser-Verstärkermedium
DE102011116232B4 (de) * 2011-10-17 2020-04-09 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
DE102011117278B4 (de) 2011-10-31 2014-07-10 Julius-Maximilians-Universität Würzburg Interbandkaskadenlaser-Verstärkermedium
CN102611003B (zh) * 2012-04-11 2014-01-08 中国科学院半导体研究所 量子点级联激光器
KR20140022136A (ko) * 2012-08-13 2014-02-24 삼성전자주식회사 반도체 발광소자
US9337617B2 (en) 2014-02-24 2016-05-10 The Board Of Regents Of The University Of Oklahoma Tunable semiconductor lasers
DE102014106209B3 (de) * 2014-05-05 2015-08-27 Nanoplus Nanosystems And Technologies Gmbh Interbandkaskadenlaser sowie Verfahren zur Herstellung eines Interbandkaskadenlasers umfassend ein Rückkopplungselement
JP2018518053A (ja) 2015-06-05 2018-07-05 ザ ガバメント オブ ザ ユナイテッド ステイツ オブ アメリカ，アズ リプレゼンテッド バイ ザ セクレタリー オブ ザ ネイビー 損失を低減するための低フィルファクタのトップコンタクトを有するインターバンドカスケードレーザ
FR3048561B1 (fr) * 2016-03-03 2019-03-15 Centre National De La Recherche Scientifique Laser a cascade quantique.
EP3476014A4 (en) 2016-06-24 2020-02-05 The Government Of The United States Of America As The Secretary of The Navy LOW INDEX GUIDANCE INTERBAND CASCADE LASERS HAVING UNDEVELOPED TOP COATING LAYER OR THIN TOP COATING LAYER
WO2019193487A1 (en) 2018-04-06 2019-10-10 Silanna UV Technologies Pte Ltd Semiconductor structure with chirp layer
JP7407546B2 (ja) * 2019-09-24 2024-01-04 株式会社東芝 量子カスケードレーザ
GB202002785D0 (en) * 2020-02-27 2020-04-15 Univ Surrey Reducing auger recombination in semiconductor optical devices
CN112582879A (zh) * 2020-12-11 2021-03-30 睿创微纳(无锡)技术有限公司 红外半导体激光器及其制备方法
US20230231364A1 (en) * 2022-01-04 2023-07-20 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Weak Index Guiding of Interband Cascade Lasers

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5457709A (en) 1994-04-04 1995-10-10 At&T Ipm Corp. Unipolar semiconductor laser
US5588015A (en) 1995-08-22 1996-12-24 University Of Houston Light emitting devices based on interband transitions in type-II quantum well heterostructures
US5793787A (en) 1996-01-16 1998-08-11 The United States Of America As Represented By The Secretary Of The Navy Type II quantum well laser with enhanced optical matrix
US5799026A (en) 1996-11-01 1998-08-25 The United States Of America As Represented By The Secretary Of The Navy Interband quantum well cascade laser, with a blocking quantum well for improved quantum efficiency
AU1073801A (en) 1999-10-07 2001-05-10 Maxion Technologies, Inc. Parallel cascade quantum well light emitting device
JP3778260B2 (ja) * 2000-08-16 2006-05-24 日本電気株式会社 半導体レーザとこれを用いたデジタル光通信システムと方法
US7485476B2 (en) 2003-08-06 2009-02-03 Yissum Research Development Company Of The Hebrew University Of Jerusalem Terahertz radiating device based on semiconductor coupled quantum wells
US20070008999A1 (en) * 2004-06-07 2007-01-11 Maxion Technologies, Inc. Broadened waveguide for interband cascade lasers
US7282777B1 (en) 2004-09-27 2007-10-16 California Institute Of Technology Interband cascade detectors
US7405552B2 (en) * 2006-01-04 2008-07-29 Micron Technology, Inc. Semiconductor temperature sensor with high sensitivity
US20080304531A1 (en) 2007-02-20 2008-12-11 California Institute Of Technology Integrated broadband quantum cascade laser
US8125706B2 (en) * 2008-10-20 2012-02-28 The United States Of America As Represented By The Secretary Of The Navy High-temperature interband cascade lasers

Also Published As

Publication number Publication date
JP2012507142A (ja) 2012-03-22
EP2340589A4 (en) 2014-03-05
EP2340589A1 (en) 2011-07-06
PL2511995T3 (pl) 2016-07-29
US8493654B2 (en) 2013-07-23
JP5718234B2 (ja) 2015-05-13
EP2511995A2 (en) 2012-10-17
CA2736265A1 (en) 2010-04-20
EP2511995A3 (en) 2014-03-05
US20100097690A1 (en) 2010-04-22
EP2340589B1 (en) 2018-03-14
US8125706B2 (en) 2012-02-28
PL2340589T3 (pl) 2018-10-31
WO2010047948A1 (en) 2010-04-29
US20120127564A1 (en) 2012-05-24
EP2511995B1 (en) 2016-01-20

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