NO20072357L - Method for initial start-up of the reaction by direct chlorination of silicon metal or a silicon-containing material at a low temperature - Google Patents

Method for initial start-up of the reaction by direct chlorination of silicon metal or a silicon-containing material at a low temperature

Info

Publication number
NO20072357L
NO20072357L NO20072357A NO20072357A NO20072357L NO 20072357 L NO20072357 L NO 20072357L NO 20072357 A NO20072357 A NO 20072357A NO 20072357 A NO20072357 A NO 20072357A NO 20072357 L NO20072357 L NO 20072357L
Authority
NO
Norway
Prior art keywords
silicon
reaction
containing material
temperature
ignition
Prior art date
Application number
NO20072357A
Other languages
Norwegian (no)
Inventor
Per Bakke
Jorild Margrete Svalestuen
Robert Gibala
Grete Viddal Oi
Original Assignee
Norsk Hydro As
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Norsk Hydro As filed Critical Norsk Hydro As
Priority to NO20072357A priority Critical patent/NO20072357L/en
Priority to PCT/NO2008/000155 priority patent/WO2008136682A1/en
Priority to TW97116566A priority patent/TW200904750A/en
Publication of NO20072357L publication Critical patent/NO20072357L/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes
    • C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
    • C01B33/10715—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by reacting chlorine with silicon or a silicon-containing material
    • C01B33/10721—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by reacting chlorine with silicon or a silicon-containing material with the preferential formation of tetrachloride
    • C01B33/10726—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by reacting chlorine with silicon or a silicon-containing material with the preferential formation of tetrachloride from silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes
    • C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
    • C01B33/10715—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by reacting chlorine with silicon or a silicon-containing material
    • C01B33/10721—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by reacting chlorine with silicon or a silicon-containing material with the preferential formation of tetrachloride

Abstract

Fremgangsmåte til oppstart av reaksjonen for produksjon av silisiumtetraklorid ved at silisiummetall, ferrosilisium, silisiumoksyd og/eller silisiumkarbid reagerer med klorid i reaktorer med virvelsjikt, stasjonært sjikt eller oppløselig sjikt. Temperaturen ved begynnelsen av kloreringen (tenning) ligger på eller nær romtemperatur, slik at en liten mengde av en tenn- eller reaksjonsstartsubstans som for eksempel en legering og/eller en forbindelse som lett reagerer eksotermt med klor ved eller nær romtemperatur, øker temperaturen i silisiumet eller det silisiumholdige materialet i omgivelsene til over kloreringstenntemperaturen for silisiumet eller det silisiumholdige stoffet.Process for starting the reaction for production of silicon tetrachloride by reacting silicon metal, ferrosilicon, silica and / or silicon carbide with chloride in reactors with fluidized bed, stationary layer or soluble layer. The temperature at the beginning of the chlorination (ignition) is at or near room temperature, so that a small amount of an ignition or reaction starting substance such as an alloy and / or a compound that readily reacts exothermically with chlorine at or near room temperature increases the temperature of the silicon or the silicon-containing material in the environment above the chlorination ignition temperature of the silicon or silicon-containing substance.

NO20072357A 2007-05-07 2007-05-07 Method for initial start-up of the reaction by direct chlorination of silicon metal or a silicon-containing material at a low temperature NO20072357L (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
NO20072357A NO20072357L (en) 2007-05-07 2007-05-07 Method for initial start-up of the reaction by direct chlorination of silicon metal or a silicon-containing material at a low temperature
PCT/NO2008/000155 WO2008136682A1 (en) 2007-05-07 2008-05-02 Method for the initial start of reaction in a process for the direct chlorination of silicon metal or a silicon containing material at a low temperature
TW97116566A TW200904750A (en) 2007-05-07 2008-05-06 Method for the initial start of reaction in a process for the direct chlorination of silicon metal or a silicon containing meterial at a low temperature

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NO20072357A NO20072357L (en) 2007-05-07 2007-05-07 Method for initial start-up of the reaction by direct chlorination of silicon metal or a silicon-containing material at a low temperature

Publications (1)

Publication Number Publication Date
NO20072357L true NO20072357L (en) 2008-11-10

Family

ID=39943707

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20072357A NO20072357L (en) 2007-05-07 2007-05-07 Method for initial start-up of the reaction by direct chlorination of silicon metal or a silicon-containing material at a low temperature

Country Status (3)

Country Link
NO (1) NO20072357L (en)
TW (1) TW200904750A (en)
WO (1) WO2008136682A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102976338B (en) * 2012-12-24 2015-02-18 宁夏胜蓝化工环保科技有限公司 Gas phase chlorination method of dichlorosilane
CN107601512B (en) * 2017-11-02 2020-08-21 成都蜀菱科技发展有限公司 Mixture and production method of silicon tetrachloride

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BR8905023A (en) * 1989-09-29 1991-04-02 Fundacao Centro Tecnologico De PROCESS AND EQUIPMENT FOR SYNTHESIS AND PURIFICATION OF SILICON TETRACLORIDE FOR THE MANUFACTURE OF OPTICAL FIBERS

Also Published As

Publication number Publication date
WO2008136682A1 (en) 2008-11-13
TW200904750A (en) 2009-02-01

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FC2A Withdrawal, rejection or dismissal of laid open patent application