NO20015815D0 - Matriseadresserbart apparat med en eller flere minneinnretninger - Google Patents

Matriseadresserbart apparat med en eller flere minneinnretninger

Info

Publication number
NO20015815D0
NO20015815D0 NO20015815A NO20015815A NO20015815D0 NO 20015815 D0 NO20015815 D0 NO 20015815D0 NO 20015815 A NO20015815 A NO 20015815A NO 20015815 A NO20015815 A NO 20015815A NO 20015815 D0 NO20015815 D0 NO 20015815D0
Authority
NO
Norway
Prior art keywords
memory devices
matrix addressable
addressable apparatus
matrix
memory
Prior art date
Application number
NO20015815A
Other languages
English (en)
Other versions
NO314373B1 (no
NO20015815A (no
Inventor
Hans Gude Gudesen
Original Assignee
Hans Gude Gudesen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hans Gude Gudesen filed Critical Hans Gude Gudesen
Priority to NO20015815A priority Critical patent/NO20015815A/no
Publication of NO20015815D0 publication Critical patent/NO20015815D0/no
Priority to PCT/NO2002/000390 priority patent/WO2003046995A1/en
Priority to KR1020047007083A priority patent/KR100623143B1/ko
Priority to JP2003548312A priority patent/JP2005510879A/ja
Priority to EP02780190A priority patent/EP1461833A1/en
Priority to CA002467189A priority patent/CA2467189A1/en
Priority to RU2004118417/28A priority patent/RU2261500C2/ru
Priority to AU2002343261A priority patent/AU2002343261B2/en
Priority to CNA02823510XA priority patent/CN1592971A/zh
Priority to US10/293,341 priority patent/US6775173B2/en
Publication of NO314373B1 publication Critical patent/NO314373B1/no
Publication of NO20015815A publication Critical patent/NO20015815A/no

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B53/00Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/202Integrated devices comprising a common active layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
NO20015815A 2001-11-28 2001-11-28 Matriseadresserbart apparat med en eller flere minneinnretninger NO20015815A (no)

Priority Applications (10)

Application Number Priority Date Filing Date Title
NO20015815A NO20015815A (no) 2001-11-28 2001-11-28 Matriseadresserbart apparat med en eller flere minneinnretninger
CNA02823510XA CN1592971A (zh) 2001-11-28 2002-10-29 带有一个或多个存储装置的矩阵可寻址设备
EP02780190A EP1461833A1 (en) 2001-11-28 2002-10-29 Matrix-addressable apparatus with one or more memory devices
KR1020047007083A KR100623143B1 (ko) 2001-11-28 2002-10-29 하나 이상의 메모리 장치를 구비한 매트릭스-어드레싱가능장치
JP2003548312A JP2005510879A (ja) 2001-11-28 2002-10-29 1つ以上のメモリ装置付きマトリクス・アドレッサブル機器
PCT/NO2002/000390 WO2003046995A1 (en) 2001-11-28 2002-10-29 Matrix-addressable apparatus with one or more memory devices
CA002467189A CA2467189A1 (en) 2001-11-28 2002-10-29 Matrix-addressable apparatus with one or more memory devices
RU2004118417/28A RU2261500C2 (ru) 2001-11-28 2002-10-29 Прибор с матричной адресацией, содержащий одно или несколько запоминающих устройств
AU2002343261A AU2002343261B2 (en) 2001-11-28 2002-10-29 Matrix-addressable apparatus with one or more memory devices
US10/293,341 US6775173B2 (en) 2001-11-28 2002-11-14 Matrix-addressable apparatus with one or more memory devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NO20015815A NO20015815A (no) 2001-11-28 2001-11-28 Matriseadresserbart apparat med en eller flere minneinnretninger

Publications (3)

Publication Number Publication Date
NO20015815D0 true NO20015815D0 (no) 2001-11-28
NO314373B1 NO314373B1 (no) 2003-03-10
NO20015815A NO20015815A (no) 2003-03-10

Family

ID=19913077

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20015815A NO20015815A (no) 2001-11-28 2001-11-28 Matriseadresserbart apparat med en eller flere minneinnretninger

Country Status (9)

Country Link
EP (1) EP1461833A1 (no)
JP (1) JP2005510879A (no)
KR (1) KR100623143B1 (no)
CN (1) CN1592971A (no)
AU (1) AU2002343261B2 (no)
CA (1) CA2467189A1 (no)
NO (1) NO20015815A (no)
RU (1) RU2261500C2 (no)
WO (1) WO2003046995A1 (no)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6649504B2 (en) 2001-12-14 2003-11-18 Thin Film Electronics Asa Method for fabricating high aspect ratio electrodes
US7015504B2 (en) * 2003-11-03 2006-03-21 Advanced Micro Devices, Inc. Sidewall formation for high density polymer memory element array
NO321280B1 (no) 2004-07-22 2006-04-18 Thin Film Electronics Asa Organisk, elektronisk krets og fremgangsmate til dens fremstilling
US7808024B2 (en) * 2004-09-27 2010-10-05 Intel Corporation Ferroelectric polymer memory module
NO20052128L (no) * 2005-04-29 2006-10-30 Thin Film Electronics Asa Minneinnretning og fremgangsmater for drift av denne
US11139426B2 (en) * 2015-12-21 2021-10-05 Koninklijke Philips N.V. Actuator device based on an electroactive polymer

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0902465B1 (en) * 1997-08-27 2008-10-15 STMicroelectronics S.r.l. Process for manufacturing electronic virtual-ground memory devices
US6117760A (en) * 1997-11-12 2000-09-12 Advanced Micro Devices, Inc. Method of making a high density interconnect formation
US6072716A (en) * 1999-04-14 2000-06-06 Massachusetts Institute Of Technology Memory structures and methods of making same

Also Published As

Publication number Publication date
KR100623143B1 (ko) 2006-09-14
NO314373B1 (no) 2003-03-10
AU2002343261B2 (en) 2006-05-11
CN1592971A (zh) 2005-03-09
EP1461833A1 (en) 2004-09-29
CA2467189A1 (en) 2003-06-05
AU2002343261A1 (en) 2003-06-10
WO2003046995A1 (en) 2003-06-05
KR20040053295A (ko) 2004-06-23
RU2261500C2 (ru) 2005-09-27
JP2005510879A (ja) 2005-04-21
NO20015815A (no) 2003-03-10
RU2004118417A (ru) 2005-04-10

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