NO154867B - - Google Patents
Download PDFInfo
- Publication number
- NO154867B NO154867B NO772513A NO772513A NO154867B NO 154867 B NO154867 B NO 154867B NO 772513 A NO772513 A NO 772513A NO 772513 A NO772513 A NO 772513A NO 154867 B NO154867 B NO 154867B
- Authority
- NO
- Norway
- Prior art keywords
- disc
- circuit
- semi
- contacts
- components
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims description 21
- 239000004020 conductor Substances 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 3
- 239000003990 capacitor Substances 0.000 description 17
- 238000000034 method Methods 0.000 description 14
- 239000000463 material Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- LVQULNGDVIKLPK-UHFFFAOYSA-N aluminium antimonide Chemical compound [Sb]#[Al] LVQULNGDVIKLPK-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000000866 electrolytic etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NO772513A NO154867C (no) | 1977-07-14 | 1977-07-14 | Fremgangsmaate for fremstilling av metallpulver. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NO772513A NO154867C (no) | 1977-07-14 | 1977-07-14 | Fremgangsmaate for fremstilling av metallpulver. |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| NO772513L NO772513L (no) | 1979-01-16 |
| NO154867B true NO154867B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1986-09-29 |
| NO154867C NO154867C (no) | 1987-01-07 |
Family
ID=19883635
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO772513A NO154867C (no) | 1977-07-14 | 1977-07-14 | Fremgangsmaate for fremstilling av metallpulver. |
Country Status (1)
| Country | Link |
|---|---|
| NO (1) | NO154867C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
-
1977
- 1977-07-14 NO NO772513A patent/NO154867C/no unknown
Also Published As
| Publication number | Publication date |
|---|---|
| NO154867C (no) | 1987-01-07 |
| NO772513L (no) | 1979-01-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3261081A (en) | Method of making miniaturized electronic circuits | |
| NO154869B (no) | Drivverktoey for festemidler. | |
| US3029366A (en) | Multiple semiconductor assembly | |
| US3423255A (en) | Semiconductor integrated circuits and method of making the same | |
| US2890395A (en) | Semiconductor construction | |
| US2736847A (en) | Fused-junction silicon diodes | |
| US3138744A (en) | Miniaturized self-contained circuit modules and method of fabrication | |
| US3581161A (en) | Molybdenum-gold-molybdenum interconnection system for integrated circuits | |
| JPS6226593B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| US5055424A (en) | Method for fabricating ohmic contacts on semiconducting diamond | |
| US3256587A (en) | Method of making vertically and horizontally integrated microcircuitry | |
| JPH01220870A (ja) | 小形熱電変換器 | |
| JPH01184942A (ja) | トリミング素子とその電気短絡方法 | |
| US2861229A (en) | Semi-conductor devices and methods of making same | |
| NO134859B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| US3497773A (en) | Passive circuit elements | |
| NO154867B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| US3116443A (en) | Semiconductor device | |
| US3350760A (en) | Capacitor for miniature electronic circuits or the like | |
| Kilby | Miniaturized electronic circuits [us patent no. 3,138, 743] | |
| US4166224A (en) | Photosensitive zero voltage semiconductor switching device | |
| US3519900A (en) | Temperature compensated reference diodes and methods for making same | |
| EP0065916A2 (en) | Schottky diode - polycrystalline silicon resistor memory cell | |
| CN112562946B (zh) | 氮化钽薄膜电阻及其制备方法 | |
| US3434015A (en) | Capacitor for miniature electronic circuits or the like |