NO123293B - - Google Patents
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- Publication number
- NO123293B NO123293B NO3214/68A NO321468A NO123293B NO 123293 B NO123293 B NO 123293B NO 3214/68 A NO3214/68 A NO 3214/68A NO 321468 A NO321468 A NO 321468A NO 123293 B NO123293 B NO 123293B
- Authority
- NO
- Norway
- Prior art keywords
- parts
- areas
- metal layer
- conductivity type
- source
- Prior art date
Links
- 229910052751 metal Inorganic materials 0.000 claims description 70
- 239000002184 metal Substances 0.000 claims description 70
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 40
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 40
- 229910052782 aluminium Inorganic materials 0.000 claims description 32
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 32
- 229910052710 silicon Inorganic materials 0.000 claims description 32
- 239000010703 silicon Substances 0.000 claims description 32
- 239000004065 semiconductor Substances 0.000 claims description 29
- 150000002500 ions Chemical class 0.000 claims description 25
- 238000009413 insulation Methods 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 19
- 238000009792 diffusion process Methods 0.000 claims description 18
- 238000002513 implantation Methods 0.000 claims description 18
- 230000005669 field effect Effects 0.000 claims description 16
- 238000005468 ion implantation Methods 0.000 claims description 15
- 239000000126 substance Substances 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 239000004411 aluminium Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 31
- 229910052796 boron Inorganic materials 0.000 description 21
- 239000000758 substrate Substances 0.000 description 15
- -1 boron ions Chemical class 0.000 description 13
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 230000007704 transition Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 230000000873 masking effect Effects 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 2
- 201000005569 Gout Diseases 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000005465 channeling Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000011081 inoculation Methods 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
- H10D62/151—Source or drain regions of field-effect devices of IGFETs
Landscapes
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB3814467 | 1967-08-18 | ||
| GB3814468A GB1227223A (enrdf_load_stackoverflow) | 1967-10-12 | 1968-08-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NO123293B true NO123293B (enrdf_load_stackoverflow) | 1971-10-25 |
Family
ID=26263706
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO3214/68A NO123293B (enrdf_load_stackoverflow) | 1967-08-18 | 1968-08-15 |
Country Status (2)
| Country | Link |
|---|---|
| NO (1) | NO123293B (enrdf_load_stackoverflow) |
| SE (1) | SE331516B (enrdf_load_stackoverflow) |
-
1968
- 1968-08-15 SE SE11018/68A patent/SE331516B/xx unknown
- 1968-08-15 NO NO3214/68A patent/NO123293B/no unknown
Also Published As
| Publication number | Publication date |
|---|---|
| SE331516B (enrdf_load_stackoverflow) | 1971-01-04 |
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