Classifications

• • H—ELECTRICITY
  • H04—ELECTRIC COMMUNICATION TECHNIQUE
  • H04Q—SELECTING
  • H04Q3/00—Selecting arrangements
  • H04Q3/42—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker
  • H04Q3/52—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker using static devices in switching stages, e.g. electronic switching arrangements
  • H04Q3/521—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker using static devices in switching stages, e.g. electronic switching arrangements using semiconductors in the switching stages
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
  • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
  • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
  • H03K17/70—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices having only two electrodes and exhibiting negative resistance
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D8/00—Diodes
  • H10D8/80—PNPN diodes, e.g. Shockley diodes or break-over diodes
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
  • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
  • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
  • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
  • H10F30/263—Photothyristors

Landscapes

• Engineering & Computer Science (AREA)
• Computer Networks & Wireless Communication (AREA)
• Thyristors (AREA)
• Crystals, And After-Treatments Of Crystals (AREA)
• Photovoltaic Devices (AREA)

Applications Claiming Priority (1)

Publications (1)

Family

ID=24188389

Family Applications (1)

Country Status (7)

Families Citing this family (43)

Family Cites Families (2)

• 0
  • NL NL99632D patent/NL99632C/xx active
  • BE BE551952D patent/BE551952A/xx unknown
• 1955
  • 1955-11-22 US US548330A patent/US2855524A/en not_active Expired - Lifetime
• 1956
  • 1956-09-03 FR FR1157540D patent/FR1157540A/fr not_active Expired
  • 1956-10-16 DE DE1956W0019922 patent/DE1021891C2/de not_active Expired
  • 1956-11-09 CH CH349299D patent/CH349299A/de unknown
  • 1956-11-21 GB GB35590/56A patent/GB813862A/en not_active Expired

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