|
US2899646A
(en)
*
|
|
1959-08-11 |
|
Tread |
|
US3123788A
(en)
*
|
|
1964-03-03 |
|
Piezoresistive gage |
|
NL299567A
(GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
*
|
1952-06-14 |
|
|
|
|
US2974236A
(en)
*
|
1953-03-11 |
1961-03-07 |
Rca Corp |
Multi-electrode semiconductor devices
|
|
US2933619A
(en)
*
|
1953-03-25 |
1960-04-19 |
Siemens Ag |
Semi-conductor device comprising an anode, a cathode and a control electrode
|
|
NL110399C
(GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
*
|
1953-06-22 |
|
|
|
|
US2927221A
(en)
*
|
1954-01-19 |
1960-03-01 |
Clevite Corp |
Semiconductor devices and trigger circuits therefor
|
|
US2932748A
(en)
*
|
1954-07-26 |
1960-04-12 |
Rca Corp |
Semiconductor devices
|
|
DE1025994B
(de)
*
|
1954-08-09 |
1958-03-13 |
Deutsche Bundespost |
Halbleiteranordnung zur Gleichrichtung, Steuerung oder Verstaerkung elektrischer oder photoelektrischer Stroeme
|
|
US2883313A
(en)
*
|
1954-08-16 |
1959-04-21 |
Rca Corp |
Semiconductor devices
|
|
US2908871A
(en)
*
|
1954-10-26 |
1959-10-13 |
Bell Telephone Labor Inc |
Negative resistance semiconductive apparatus
|
|
US2913676A
(en)
*
|
1955-04-18 |
1959-11-17 |
Rca Corp |
Semiconductor devices and systems
|
|
US2877358A
(en)
*
|
1955-06-20 |
1959-03-10 |
Bell Telephone Labor Inc |
Semiconductive pulse translator
|
|
US2889469A
(en)
*
|
1955-10-05 |
1959-06-02 |
Rca Corp |
Semi-conductor electrical pulse counting means
|
|
US2967952A
(en)
*
|
1956-04-25 |
1961-01-10 |
Shockley William |
Semiconductor shift register
|
|
US2869054A
(en)
*
|
1956-11-09 |
1959-01-13 |
Ibm |
Unipolar transistor
|
|
US2878152A
(en)
*
|
1956-11-28 |
1959-03-17 |
Texas Instruments Inc |
Grown junction transistors
|
|
US3047733A
(en)
*
|
1957-03-12 |
1962-07-31 |
Ibm |
Multiple output semiconductor logical device
|
|
US2929753A
(en)
*
|
1957-04-11 |
1960-03-22 |
Beckman Instruments Inc |
Transistor structure and method
|
|
US3033714A
(en)
*
|
1957-09-28 |
1962-05-08 |
Sony Corp |
Diode type semiconductor device
|
|
NL238689A
(GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
*
|
1958-02-15 |
|
|
|
|
US3116183A
(en)
*
|
1958-05-15 |
1963-12-31 |
Gen Electric |
Asymmetrically conductive device
|
|
DE1099081B
(de)
*
|
1958-05-15 |
1961-02-09 |
Gen Electric |
Spacistor mit einem in Sperrichtung vorgespannten pin-Halbleiterkoerper und mit einer injizierenden Elektrode und einer nicht injizierenden Modulator-Elektrode auf der i-Zone
|
|
US2893904A
(en)
*
|
1958-10-27 |
1959-07-07 |
Hoffman Electronics |
Thermal zener device or the like
|
|
GB936181A
(en)
*
|
1959-05-19 |
1963-09-04 |
Nat Res Dev |
Improvements in and relating to solid-state electrical devices
|
|
NL252543A
(GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
*
|
1959-06-12 |
|
|
|
|
US2959681A
(en)
*
|
1959-06-18 |
1960-11-08 |
Fairchild Semiconductor |
Semiconductor scanning device
|
|
US3093752A
(en)
*
|
1959-08-24 |
1963-06-11 |
Westinghouse Electric Corp |
Function generator and frequency doubler using non-linear characteristics of semiconductive device
|
|
US3150299A
(en)
*
|
1959-09-11 |
1964-09-22 |
Fairchild Camera Instr Co |
Semiconductor circuit complex having isolation means
|
|
US3025438A
(en)
*
|
1959-09-18 |
1962-03-13 |
Tungsol Electric Inc |
Field effect transistor
|
|
US3007119A
(en)
*
|
1959-11-04 |
1961-10-31 |
Westinghouse Electric Corp |
Modulating circuit and field effect semiconductor structure for use therein
|
|
US3084078A
(en)
*
|
1959-12-02 |
1963-04-02 |
Texas Instruments Inc |
High frequency germanium transistor
|
|
US3171068A
(en)
*
|
1960-10-19 |
1965-02-23 |
Merck & Co Inc |
Semiconductor diodes
|
|
US3158754A
(en)
*
|
1961-10-05 |
1964-11-24 |
Ibm |
Double injection semiconductor device
|
|
US3248677A
(en)
*
|
1961-10-27 |
1966-04-26 |
Ibm |
Temperature compensated semiconductor resistor
|
|
US3249828A
(en)
*
|
1962-06-15 |
1966-05-03 |
Crystalonics Inc |
Overlapping gate structure field effect semiconductor device
|
|
US3252003A
(en)
*
|
1962-09-10 |
1966-05-17 |
Westinghouse Electric Corp |
Unipolar transistor
|
|
US3229104A
(en)
*
|
1962-12-24 |
1966-01-11 |
Ibm |
Four terminal electro-optical semiconductor device using light coupling
|
|
DE1265795B
(de)
*
|
1963-01-25 |
1968-04-11 |
Ibm |
Transistorschaltung zur Verwendung als Oszillator, Frequenzmodulator oder Verzoegerungskette
|
|
DE1279853B
(de)
*
|
1964-07-03 |
1968-10-10 |
Siemens Ag |
Halbleiter-Gleichrichteranordnung zur Gleichrichtung von Wechselspannungen hohen Betrages und hoher Frequenz
|
|
US3381189A
(en)
*
|
1964-08-18 |
1968-04-30 |
Hughes Aircraft Co |
Mesa multi-channel field-effect triode
|
|
US3381188A
(en)
*
|
1964-08-18 |
1968-04-30 |
Hughes Aircraft Co |
Planar multi-channel field-effect triode
|
|
US3381187A
(en)
*
|
1964-08-18 |
1968-04-30 |
Hughes Aircraft Co |
High-frequency field-effect triode device
|
|
US3377529A
(en)
*
|
1965-10-04 |
1968-04-09 |
Siemens Ag |
Semiconductor device with anisotropic inclusions for producing electromag-netic radiation
|
|
US3409812A
(en)
*
|
1965-11-12 |
1968-11-05 |
Hughes Aircraft Co |
Space-charge-limited current triode device
|
|
GB1200379A
(en)
*
|
1966-10-13 |
1970-07-29 |
Sony Corp |
Magnetoresistance element
|
|
JPS4828114B1
(GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
*
|
1966-10-29 |
1973-08-29 |
|
|
|
JPS501635B1
(GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
*
|
1969-10-06 |
1975-01-20 |
|
|
|
US3593045A
(en)
*
|
1969-12-29 |
1971-07-13 |
Bell Telephone Labor Inc |
Multiaddress switch using a confined electron beam in a semiconductor
|
|
US5585654A
(en)
*
|
1971-04-28 |
1996-12-17 |
Handotai Kenkyu Shinkokai |
Field effect transistor having saturated drain current characteristic
|
|
US5557119A
(en)
*
|
1971-04-28 |
1996-09-17 |
Handotai Kenkyu Shinkokai |
Field effect transistor having unsaturated drain current characteristic
|
|
JPS526076B1
(GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
*
|
1971-04-28 |
1977-02-18 |
|
|
|
US3714473A
(en)
*
|
1971-05-12 |
1973-01-30 |
Bell Telephone Labor Inc |
Planar semiconductor device utilizing confined charge carrier beams
|
|
US3849789A
(en)
*
|
1972-11-01 |
1974-11-19 |
Gen Electric |
Schottky barrier diodes
|
|
GB1444951A
(en)
*
|
1973-06-18 |
1976-08-04 |
Mullard Ltd |
Electronic solid state devices
|
|
US4024420A
(en)
*
|
1975-06-27 |
1977-05-17 |
General Electric Company |
Deep diode atomic battery
|
|
DE2804165C2
(de)
*
|
1978-02-01 |
1982-11-11 |
Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt |
Halbleiteranordnung mit einem für die Stromführung geeigneten Kanal und Verfahren zum Betrieb dieser Halbleiteranordnung
|
|
FR2501913A1
(fr)
*
|
1981-03-10 |
1982-09-17 |
Thomson Csf |
Transistor a effet de champ de type planar comportant des electrodes a puits metallises et procede de fabrication de ce transistor
|
|
DE3334167A1
(de)
*
|
1983-09-21 |
1985-04-04 |
Siemens AG, 1000 Berlin und 8000 München |
Halbleiterdiode
|
|
US4635084A
(en)
*
|
1984-06-08 |
1987-01-06 |
Eaton Corporation |
Split row power JFET
|
|
JPS61198779A
(ja)
*
|
1985-02-28 |
1986-09-03 |
Res Dev Corp Of Japan |
両面ゲ−ト静電誘導サイリスタ及びその製造方法
|
|
JP6981365B2
(ja)
*
|
2018-05-17 |
2021-12-15 |
日本電信電話株式会社 |
光検出器
|