NL93573C - - Google Patents

Info

Publication number
NL93573C
NL93573C NL93573DA NL93573C NL 93573 C NL93573 C NL 93573C NL 93573D A NL93573D A NL 93573DA NL 93573 C NL93573 C NL 93573C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL93573C publication Critical patent/NL93573C/xx
Priority claimed from US321262A external-priority patent/US2705767A/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
NL93573D 1952-11-18 NL93573C (hu)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US321262A US2705767A (en) 1952-11-18 1952-11-18 P-n junction transistor
US439319A US2717343A (en) 1952-11-18 1954-06-25 P-n junction transistor

Publications (1)

Publication Number Publication Date
NL93573C true NL93573C (hu)

Family

ID=26982893

Family Applications (1)

Application Number Title Priority Date Filing Date
NL93573D NL93573C (hu) 1952-11-18

Country Status (5)

Country Link
US (1) US2717343A (hu)
BE (1) BE524376A (hu)
FR (1) FR1094039A (hu)
GB (1) GB779146A (hu)
NL (1) NL93573C (hu)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2870345A (en) * 1954-02-02 1959-01-20 Philips Corp Amplification control of a transistor
BE548647A (hu) * 1955-06-28
NL212855A (hu) * 1955-03-10
BE547274A (hu) * 1955-06-20
US2894184A (en) * 1955-06-29 1959-07-07 Hughes Aircraft Co Electrical characteristics of diodes
US3091701A (en) * 1956-03-26 1963-05-28 Raytheon Co High frequency response transistors
US2988677A (en) * 1959-05-01 1961-06-13 Ibm Negative resistance semiconductor device structure
US3309568A (en) * 1964-01-02 1967-03-14 Ford Motor Co Means including a saturable capacitor for reducing electrical energy dissipation in an electrical switching element
DE1803883A1 (de) * 1968-10-18 1970-05-27 Siemens Ag Durch mindestens zwei abstimmbare Kapazitaetsdioden gesteuerte elektrische Anordnung
US4427457A (en) 1981-04-07 1984-01-24 Oregon Graduate Center Method of making depthwise-oriented integrated circuit capacitors

Also Published As

Publication number Publication date
FR1094039A (fr) 1955-05-11
US2717343A (en) 1955-09-06
BE524376A (hu)
GB779146A (en) 1957-07-17

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