NL92927C - - Google Patents
Info
- Publication number
- NL92927C NL92927C NL92927DA NL92927C NL 92927 C NL92927 C NL 92927C NL 92927D A NL92927D A NL 92927DA NL 92927 C NL92927 C NL 92927C
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES40182A DE1032853B (de) | 1954-07-27 | 1954-07-27 | Verfahren zur Herstellung von Legierungskontakten auf einem Halbleitergrundkoerper aus Silizium |
Publications (1)
Publication Number | Publication Date |
---|---|
NL92927C true NL92927C (pt) |
Family
ID=7483566
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL92927D NL92927C (pt) | 1954-07-27 | ||
NL198572D NL198572A (pt) | 1954-07-27 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL198572D NL198572A (pt) | 1954-07-27 |
Country Status (5)
Country | Link |
---|---|
US (1) | US2831787A (pt) |
DE (1) | DE1032853B (pt) |
FR (1) | FR1137399A (pt) |
GB (1) | GB795478A (pt) |
NL (2) | NL198572A (pt) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2930949A (en) * | 1956-09-25 | 1960-03-29 | Philco Corp | Semiconductive device and method of fabrication thereof |
US2930950A (en) * | 1956-12-10 | 1960-03-29 | Teszner Stanislas | High power field-effect transistor |
US2985550A (en) * | 1957-01-04 | 1961-05-23 | Texas Instruments Inc | Production of high temperature alloyed semiconductors |
US3211970A (en) * | 1957-05-06 | 1965-10-12 | Rca Corp | Semiconductor devices |
NL230567A (pt) * | 1957-08-16 | |||
GB849477A (en) * | 1957-09-23 | 1960-09-28 | Nat Res Dev | Improvements in or relating to semiconductor control devices |
US3111611A (en) * | 1957-09-24 | 1963-11-19 | Ibm | Graded energy gap semiconductor devices |
US2985805A (en) * | 1958-03-05 | 1961-05-23 | Rca Corp | Semiconductor devices |
US2937323A (en) * | 1958-05-29 | 1960-05-17 | Westinghouse Electric Corp | Fused junctions in silicon carbide |
NL107889C (pt) * | 1958-08-26 | |||
FR1210880A (fr) * | 1958-08-29 | 1960-03-11 | Perfectionnements aux transistors à effet de champ | |
GB945742A (pt) * | 1959-02-06 | Texas Instruments Inc | ||
GB936181A (en) * | 1959-05-19 | 1963-09-04 | Nat Res Dev | Improvements in and relating to solid-state electrical devices |
DE1102250B (de) * | 1959-11-13 | 1961-03-16 | Licentia Gmbh | Verfahren zur Kontaktierung von Halbleiterbauelementen, insbesondere Thermoelementen |
NL260481A (pt) * | 1960-02-08 | |||
US3176204A (en) * | 1960-12-22 | 1965-03-30 | Raytheon Co | Device composed of different semiconductive materials |
US3200490A (en) * | 1962-12-07 | 1965-08-17 | Philco Corp | Method of forming ohmic bonds to a germanium-coated silicon body with eutectic alloyforming materials |
NL302497A (pt) * | 1962-12-31 | |||
US3381183A (en) * | 1965-06-21 | 1968-04-30 | Rca Corp | High power multi-emitter transistor |
DE1514563A1 (de) * | 1965-09-07 | 1969-06-19 | Semikron Gleichrichterbau | Steuerbares Halbleiterbauelement |
US3458777A (en) * | 1966-09-21 | 1969-07-29 | Hughes Aircraft Co | Pin diode with a non-uniform intrinsic region width |
US3448354A (en) * | 1967-01-20 | 1969-06-03 | Rca Corp | Semiconductor device having increased resistance to second breakdown |
DE1539332B2 (de) * | 1967-03-21 | 1971-02-04 | Siemens AG, 1000 Berlin u 8000 München | Kontaktstück zur Kontaktierung von Thermoelementschenkeln in Thermogenerato ren |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE489418A (pt) * | 1948-06-26 |
-
0
- US US2831787D patent/US2831787A/en not_active Expired - Lifetime
- NL NL92927D patent/NL92927C/xx active
- NL NL198572D patent/NL198572A/xx unknown
-
1954
- 1954-07-27 DE DES40182A patent/DE1032853B/de active Pending
-
1955
- 1955-07-07 FR FR1137399D patent/FR1137399A/fr not_active Expired
- 1955-07-25 GB GB21460/55A patent/GB795478A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US2831787A (en) | 1958-04-22 |
GB795478A (en) | 1958-05-21 |
FR1137399A (fr) | 1957-05-28 |
DE1032853B (de) | 1958-06-26 |
NL198572A (pt) |