NL8204878A - Halfgeleiderinrichting. - Google Patents

Halfgeleiderinrichting. Download PDF

Info

Publication number
NL8204878A
NL8204878A NL8204878A NL8204878A NL8204878A NL 8204878 A NL8204878 A NL 8204878A NL 8204878 A NL8204878 A NL 8204878A NL 8204878 A NL8204878 A NL 8204878A NL 8204878 A NL8204878 A NL 8204878A
Authority
NL
Netherlands
Prior art keywords
transistor
emitter
semiconductor device
base
semiconductor
Prior art date
Application number
NL8204878A
Other languages
English (en)
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL8204878A priority Critical patent/NL8204878A/nl
Priority to DE3343632A priority patent/DE3343632C2/de
Priority to GB08333233A priority patent/GB2133619B/en
Priority to FR8320046A priority patent/FR2538168B1/fr
Priority to IT24175/83A priority patent/IT1172446B/it
Priority to CA000443371A priority patent/CA1204521A/en
Priority to JP58236509A priority patent/JPS59117263A/ja
Publication of NL8204878A publication Critical patent/NL8204878A/nl
Priority to US06/805,579 priority patent/US4642668A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • H10D89/105—Integrated device layouts adapted for thermal considerations

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
NL8204878A 1982-12-17 1982-12-17 Halfgeleiderinrichting. NL8204878A (nl)

Priority Applications (8)

Application Number Priority Date Filing Date Title
NL8204878A NL8204878A (nl) 1982-12-17 1982-12-17 Halfgeleiderinrichting.
DE3343632A DE3343632C2 (de) 1982-12-17 1983-12-02 Halbleiteranordnung mit einem in Teiltransistoren aufgeteilten Leistungstransistor, wobei die Teiltransistoren einen einheitlichen Temperaturverlauf aufweisen
GB08333233A GB2133619B (en) 1982-12-17 1983-12-13 Semiconductor power device
FR8320046A FR2538168B1 (fr) 1982-12-17 1983-12-14 Dispositif semi-conducteur protege contre le claquage du second genre, en particulier transistor de puissance
IT24175/83A IT1172446B (it) 1982-12-17 1983-12-14 Dispositivo semiconduttore
CA000443371A CA1204521A (en) 1982-12-17 1983-12-15 Semiconductor device
JP58236509A JPS59117263A (ja) 1982-12-17 1983-12-16 半導体装置
US06/805,579 US4642668A (en) 1982-12-17 1985-12-05 Semiconductor device having improved thermal characteristics

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8204878 1982-12-17
NL8204878A NL8204878A (nl) 1982-12-17 1982-12-17 Halfgeleiderinrichting.

Publications (1)

Publication Number Publication Date
NL8204878A true NL8204878A (nl) 1984-07-16

Family

ID=19840761

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8204878A NL8204878A (nl) 1982-12-17 1982-12-17 Halfgeleiderinrichting.

Country Status (8)

Country Link
US (1) US4642668A (cs)
JP (1) JPS59117263A (cs)
CA (1) CA1204521A (cs)
DE (1) DE3343632C2 (cs)
FR (1) FR2538168B1 (cs)
GB (1) GB2133619B (cs)
IT (1) IT1172446B (cs)
NL (1) NL8204878A (cs)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1215230B (it) * 1985-01-08 1990-01-31 Ates Componenti Elettron Diretta. dispositivo a semiconduttore integrato con drastica riduzione dei fenomeni di rottura secondaria
DE3802821A1 (de) * 1988-01-30 1989-08-03 Bosch Gmbh Robert Leistungstransistor
DE3802767A1 (de) * 1988-01-30 1989-08-10 Bosch Gmbh Robert Elektronisches geraet
EP0560123A3 (en) * 1992-03-12 1994-05-25 Siemens Ag Power transistor with multiple finger contacts
US6611172B1 (en) * 2001-06-25 2003-08-26 Sirenza Microdevices, Inc. Thermally distributed darlington amplifier
US6703895B1 (en) * 2002-09-26 2004-03-09 Motorola, Inc. Semiconductor component and method of operating same
US10403621B2 (en) * 2014-10-29 2019-09-03 Taiwan Semiconductor Manufacturing Company, Ltd. Circuit layout, layout method and system for implementing the method
JP7725873B2 (ja) * 2021-05-31 2025-08-20 セイコーエプソン株式会社 集積回路装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3567506A (en) * 1968-03-22 1971-03-02 Hughes Aircraft Co Method for providing a planar transistor with heat-dissipating top base and emitter contacts
US3896486A (en) * 1968-05-06 1975-07-22 Rca Corp Power transistor having good thermal fatigue capabilities
GB1288384A (cs) * 1969-01-31 1972-09-06
US3667064A (en) * 1969-05-19 1972-05-30 Massachusetts Inst Technology Power semiconductor device with negative thermal feedback
US3704398A (en) * 1970-02-14 1972-11-28 Nippon Electric Co Multi-emitter power transistor having emitter region arrangement for achieving substantially uniform emitter-base junction temperatures
US3995304A (en) * 1972-01-10 1976-11-30 Teledyne, Inc. D/A bit switch
US3868720A (en) * 1973-12-17 1975-02-25 Westinghouse Electric Corp High frequency bipolar transistor with integral thermally compensated degenerative feedback resistance
NL7405237A (nl) * 1974-04-18 1975-10-21 Philips Nv Parallelschakelen van halfgeleidersystemen.
US3952259A (en) * 1975-04-28 1976-04-20 Rockwell International Corporation Gain control apparatus
NL181612C (nl) * 1977-05-25 1988-03-16 Philips Nv Halfgeleiderinrichting.
JPS5422784A (en) * 1977-07-22 1979-02-20 Hitachi Ltd Semiconductor integrated circuit device for output
US4136354A (en) * 1977-09-15 1979-01-23 National Semiconductor Corporation Power transistor including a sense emitter and a reference emitter for enabling power dissipation to be limited to less than a destructive level
US4161740A (en) * 1977-11-07 1979-07-17 Microwave Semiconductor Corp. High frequency power transistor having reduced interconnection inductance and thermal resistance

Also Published As

Publication number Publication date
CA1204521A (en) 1986-05-13
US4642668A (en) 1987-02-10
JPS59117263A (ja) 1984-07-06
DE3343632C2 (de) 1993-09-30
GB2133619B (en) 1986-08-20
GB2133619A (en) 1984-07-25
IT8324175A1 (it) 1985-06-14
IT1172446B (it) 1987-06-18
JPH0420264B2 (cs) 1992-04-02
GB8333233D0 (en) 1984-01-18
FR2538168A1 (fr) 1984-06-22
IT8324175A0 (it) 1983-12-14
FR2538168B1 (fr) 1988-10-14
DE3343632A1 (de) 1984-06-20

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Legal Events

Date Code Title Description
A1B A search report has been drawn up
A85 Still pending on 85-01-01
BC A request for examination has been filed
BV The patent application has lapsed