NL8000792A - Varieerbare vertragingslijn voor akoestische oppervlaktegolven. - Google Patents
Varieerbare vertragingslijn voor akoestische oppervlaktegolven. Download PDFInfo
- Publication number
- NL8000792A NL8000792A NL8000792A NL8000792A NL8000792A NL 8000792 A NL8000792 A NL 8000792A NL 8000792 A NL8000792 A NL 8000792A NL 8000792 A NL8000792 A NL 8000792A NL 8000792 A NL8000792 A NL 8000792A
- Authority
- NL
- Netherlands
- Prior art keywords
- substrate
- delay line
- contact
- piezoelectric
- variable delay
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims description 65
- 238000010897 surface acoustic wave method Methods 0.000 claims description 61
- 239000004065 semiconductor Substances 0.000 claims description 48
- 239000000463 material Substances 0.000 claims description 32
- 239000000969 carrier Substances 0.000 claims description 7
- 230000008859 change Effects 0.000 claims description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 54
- 239000011787 zinc oxide Substances 0.000 description 27
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 24
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 24
- 238000004519 manufacturing process Methods 0.000 description 12
- 230000008878 coupling Effects 0.000 description 10
- 238000010168 coupling process Methods 0.000 description 10
- 238000005859 coupling reaction Methods 0.000 description 10
- 238000009826 distribution Methods 0.000 description 9
- 230000005684 electric field Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 7
- 239000004020 conductor Substances 0.000 description 7
- 230000003993 interaction Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000002131 composite material Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 5
- 238000001465 metallisation Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- 241001101998 Galium Species 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- FDKAYGUKROYPRO-UHFFFAOYSA-N iron arsenide Chemical compound [Fe].[As]=[Fe] FDKAYGUKROYPRO-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004899 motility Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000002574 poison Substances 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000026683 transduction Effects 0.000 description 1
- 238000010361 transduction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/30—Time-delay networks
- H03H9/42—Time-delay networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/30—Time-delay networks
- H03H9/42—Time-delay networks using surface acoustic waves
- H03H9/423—Time-delay networks using surface acoustic waves with adjustable delay time
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US1161279 | 1979-02-12 | ||
| US06/011,612 US4233573A (en) | 1979-02-12 | 1979-02-12 | Carrier concentration controlled surface acoustic wave variable delay devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8000792A true NL8000792A (nl) | 1980-08-14 |
Family
ID=21751200
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8000792A NL8000792A (nl) | 1979-02-12 | 1980-02-08 | Varieerbare vertragingslijn voor akoestische oppervlaktegolven. |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US4233573A (ru) |
| JP (1) | JPS55109021A (ru) |
| BE (1) | BE881671A (ru) |
| CA (1) | CA1149030A (ru) |
| DE (1) | DE3005179A1 (ru) |
| DK (1) | DK53980A (ru) |
| FR (1) | FR2448790A1 (ru) |
| GB (1) | GB2042842B (ru) |
| NL (1) | NL8000792A (ru) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5644858A (en) * | 1979-09-19 | 1981-04-24 | Matsushita Electric Ind Co Ltd | Voltage measuring device |
| US4354166A (en) * | 1980-10-23 | 1982-10-12 | United Technologies Corporation | Carrier concentration controlled surface acoustic wave resonator and oscillator |
| US4345176A (en) * | 1980-11-03 | 1982-08-17 | United Technologies Corporation | Temperature compensated gallium arsenide surface acoustic wave devices |
| US4328473A (en) * | 1980-11-03 | 1982-05-04 | United Technologies Corporation | Isolated gate, programmable internal mixing saw signal processor |
| EP0061033B1 (en) * | 1981-03-06 | 1985-10-30 | Matsushita Electric Industrial Co., Ltd. | Electrostatic voltage sensor |
| US4380864A (en) * | 1981-07-27 | 1983-04-26 | The United States Of America As Represented By The Secretary Of The Air Force | Method for providing in-situ non-destructive monitoring of semiconductors during laser annealing process |
| US4625184A (en) * | 1982-07-02 | 1986-11-25 | Clarion Co., Ltd. | Surface acoustic wave device with impedance matching network formed thereon |
| US4633285A (en) * | 1982-08-10 | 1986-12-30 | University Of Illinois | Acoustic charge transport device and method |
| US4581592A (en) * | 1983-05-03 | 1986-04-08 | R F Monolithics, Inc. | Saw stabilized oscillator with controlled pull-range |
| JPS6194411A (ja) * | 1984-10-15 | 1986-05-13 | Clarion Co Ltd | 帯域可変弾性表面波フイルタ |
| US4748364A (en) * | 1984-10-15 | 1988-05-31 | Clarion Co., Ltd. | Surface acoustic wave device |
| US4665374A (en) * | 1985-12-20 | 1987-05-12 | Allied Corporation | Monolithic programmable signal processor using PI-FET taps |
| JPS63196115U (ru) * | 1987-06-05 | 1988-12-16 | ||
| DE3922671A1 (de) * | 1989-07-10 | 1991-01-24 | Siemens Ag | Akustoelektronisches bauelement mit einer oberflaechenwellenanordnung und einer elektronischen halbleiterschaltung |
| US5128579A (en) * | 1990-10-02 | 1992-07-07 | United Technologies Corporation | Act electrode configuration for linear readout |
| JP2574612B2 (ja) * | 1992-10-13 | 1997-01-22 | 松下電器産業株式会社 | 電子音響集積回路およびその製造方法 |
| WO1997009624A1 (de) * | 1995-09-04 | 1997-03-13 | Siemens Aktiengesellschaft | Spannungsmesser, geeignet für mittel-/hochspannungseinrichtungen, mit oberflächenwellen-einrichtung |
| US6003370A (en) * | 1996-05-30 | 1999-12-21 | Minolta Co., Ltd. | Elastic surface wave gyroscope |
| JP3276930B2 (ja) * | 1998-11-17 | 2002-04-22 | 科学技術振興事業団 | トランジスタ及び半導体装置 |
| US6300706B1 (en) * | 1999-07-14 | 2001-10-09 | The United States Of America As Represented By The Secretary Of The Army | Compound semiconductor monolithic frequency sources and actuators |
| GB0307746D0 (en) * | 2003-04-03 | 2003-05-07 | Microemissive Displays Ltd | Removing a material from a substrate |
| JP3835696B2 (ja) * | 2004-04-06 | 2006-10-18 | セイコーエプソン株式会社 | 発振回路および電子機器 |
| US7687971B2 (en) * | 2006-08-15 | 2010-03-30 | Northrop Grumman Corporation | Electric field control of surface acoustic wave velocity |
| US7656253B2 (en) | 2007-04-18 | 2010-02-02 | Northrop Grumman Space & Mission Systems Corporation | Surface acoustic wave passband control |
| JP7160593B2 (ja) * | 2018-08-08 | 2022-10-25 | 東海旅客鉄道株式会社 | 温度異常検出システム及び温度異常検出方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2019780C3 (de) * | 1970-04-23 | 1974-07-18 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum nachträglichen Abgleichen der Laufzeit von elektroakustischen Verzögerungsleitungen auf piezoelektrischen Keramiksubstraten |
| US3827002A (en) * | 1973-05-18 | 1974-07-30 | Us Navy | Tunable electroacoustic transducers |
| US3894286A (en) * | 1974-01-28 | 1975-07-08 | Crystal Tech Inc | Temperature compensated voltage tunable circuits using surface wave devices |
| US4005376A (en) * | 1976-04-15 | 1977-01-25 | The United States Of America As Represented By The Secretary Of The Navy | Electronically variable surface acoustic wave phase shifter |
| US4078186A (en) * | 1976-10-21 | 1978-03-07 | The United States Of America As Represented By The Secretary Of The Navy | Magnetically tuned, surface acoustic wave device |
-
1979
- 1979-02-12 US US06/011,612 patent/US4233573A/en not_active Expired - Lifetime
-
1980
- 1980-01-18 CA CA000343972A patent/CA1149030A/en not_active Expired
- 1980-02-08 DK DK53980A patent/DK53980A/da not_active Application Discontinuation
- 1980-02-08 NL NL8000792A patent/NL8000792A/nl not_active Application Discontinuation
- 1980-02-11 GB GB8004552A patent/GB2042842B/en not_active Expired
- 1980-02-12 DE DE19803005179 patent/DE3005179A1/de not_active Withdrawn
- 1980-02-12 JP JP1648880A patent/JPS55109021A/ja active Pending
- 1980-02-12 FR FR8003080A patent/FR2448790A1/fr active Granted
- 1980-02-12 BE BE0/199359A patent/BE881671A/fr not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| US4233573A (en) | 1980-11-11 |
| DK53980A (da) | 1980-08-13 |
| GB2042842A (en) | 1980-09-24 |
| FR2448790B1 (ru) | 1984-08-03 |
| CA1149030A (en) | 1983-06-28 |
| FR2448790A1 (fr) | 1980-09-05 |
| GB2042842B (en) | 1983-03-23 |
| BE881671A (fr) | 1980-05-30 |
| DE3005179A1 (de) | 1980-08-21 |
| JPS55109021A (en) | 1980-08-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| NL8000792A (nl) | Varieerbare vertragingslijn voor akoestische oppervlaktegolven. | |
| US3200354A (en) | Ultrasonic wave transmission device utilizing semiconductor piezoelectric material to provide selectable velocity of transmission | |
| US4354166A (en) | Carrier concentration controlled surface acoustic wave resonator and oscillator | |
| CA2033318C (en) | Super high frequency oscillator/resonator | |
| US5339053A (en) | Instant-on microwave oscillators using resonant tunneling diode | |
| US6894581B2 (en) | Monolithic nonlinear transmission lines and sampling circuits with reduced shock-wave-to-surface-wave coupling | |
| US6029324A (en) | Acoustical-electronic component operating with acoustical surface waves as well as a tunable delay line, a resonator and a semiconductor sensor using the component | |
| US20040212457A1 (en) | High temperature superconducting tunable filter | |
| US3516021A (en) | Field effect transistor microwave generator | |
| US7098573B2 (en) | Frequency-tunable resonator | |
| US4019200A (en) | Monolithic surface acoustic wave signal storage device | |
| US5401953A (en) | Optically-switched submillimeter-wave oscillator and radiator having a switch-to-switch propagation delay | |
| CN112204879B (zh) | 电可调表面声波谐振器 | |
| US4357553A (en) | Surface-acoustic-wave device | |
| US4028648A (en) | Tunable surface wave device resonator | |
| US4575696A (en) | Method for using interdigital surface wave transducer to generate unidirectionally propagating surface wave | |
| Scibor-Rylski | Total-internal-reflection electro-optic diffraction deflector/modulator | |
| US5030930A (en) | Surface-acoustic-wave convolver | |
| US6194808B1 (en) | Surface acoustic wave functional device | |
| US5512868A (en) | Magnetostatic microwave device having large impedance change at resonance | |
| US4005376A (en) | Electronically variable surface acoustic wave phase shifter | |
| US4954864A (en) | Millimeter-wave monolithic diode-grid frequency multiplier | |
| US3678302A (en) | Solid state electronic device utilizing difference in effective mass | |
| US3129346A (en) | Frequency and time control | |
| Kim et al. | An analysis of surface acoustic wave propagation in a piezoelectric film over a GaAs/AlGaAs heterostructure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A85 | Still pending on 85-01-01 | ||
| BV | The patent application has lapsed |