NL7920170A - Het optisch verhitten van materialen met twee golfleng- ten. - Google Patents

Het optisch verhitten van materialen met twee golfleng- ten. Download PDF

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Publication number
NL7920170A
NL7920170A NL7920170A NL7920170A NL7920170A NL 7920170 A NL7920170 A NL 7920170A NL 7920170 A NL7920170 A NL 7920170A NL 7920170 A NL7920170 A NL 7920170A NL 7920170 A NL7920170 A NL 7920170A
Authority
NL
Netherlands
Prior art keywords
light
radiation
pulse
wavelength
substrate
Prior art date
Application number
NL7920170A
Other languages
English (en)
Dutch (nl)
Original Assignee
Western Electric Company, Incorporated Te New York.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Company, Incorporated Te New York. filed Critical Western Electric Company, Incorporated Te New York.
Publication of NL7920170A publication Critical patent/NL7920170A/nl

Links

Classifications

    • H10P34/42—
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Recrystallisation Techniques (AREA)
  • Laser Beam Processing (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
NL7920170A 1978-11-28 1979-11-15 Het optisch verhitten van materialen met twee golfleng- ten. NL7920170A (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US96419378A 1978-11-28 1978-11-28
US96419378 1978-11-28

Publications (1)

Publication Number Publication Date
NL7920170A true NL7920170A (nl) 1980-09-30

Family

ID=25508237

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7920170A NL7920170A (nl) 1978-11-28 1979-11-15 Het optisch verhitten van materialen met twee golfleng- ten.

Country Status (7)

Country Link
JP (1) JPS55500964A (enExample)
CA (1) CA1129969A (enExample)
FR (1) FR2443138A1 (enExample)
GB (1) GB2056769B (enExample)
IT (1) IT1127616B (enExample)
NL (1) NL7920170A (enExample)
WO (1) WO1980001121A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1174285A (en) * 1980-04-28 1984-09-11 Michelangelo Delfino Laser induced flow of integrated circuit structure materials
US4542037A (en) * 1980-04-28 1985-09-17 Fairchild Camera And Instrument Corporation Laser induced flow of glass bonded materials
WO1998015380A1 (en) * 1996-10-08 1998-04-16 The University Of Arkansas Process and apparatus for sequential multi-beam laser processing of materials
US8546805B2 (en) 2012-01-27 2013-10-01 Ultratech, Inc. Two-beam laser annealing with improved temperature performance
US9558973B2 (en) 2012-06-11 2017-01-31 Ultratech, Inc. Laser annealing systems and methods with ultra-short dwell times
SG10201503478UA (en) 2012-06-11 2015-06-29 Ultratech Inc Laser annealing systems and methods with ultra-short dwell times
US10083843B2 (en) 2014-12-17 2018-09-25 Ultratech, Inc. Laser annealing systems and methods with ultra-short dwell times

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3340601A (en) * 1963-07-17 1967-09-12 United Aircraft Corp Alloy diffused transistor
US3492072A (en) * 1965-04-14 1970-01-27 Westinghouse Electric Corp Apparatus for producing radiation patterns for forming etchant-resistant patterns and the like
US3585088A (en) * 1968-10-18 1971-06-15 Ibm Methods of producing single crystals on supporting substrates
US3848104A (en) * 1973-04-09 1974-11-12 Avco Everett Res Lab Inc Apparatus for heat treating a surface
US4151008A (en) * 1974-11-15 1979-04-24 Spire Corporation Method involving pulsed light processing of semiconductor devices
US3940289A (en) * 1975-02-03 1976-02-24 The United States Of America As Represented By The Secretary Of The Navy Flash melting method for producing new impurity distributions in solids
US4059461A (en) * 1975-12-10 1977-11-22 Massachusetts Institute Of Technology Method for improving the crystallinity of semiconductor films by laser beam scanning and the products thereof
US3989778A (en) * 1975-12-17 1976-11-02 W. R. Grace & Co. Method of heat sealing thermoplastic sheets together using a split laser beam
DE2643893C3 (de) * 1976-09-29 1981-01-08 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer mit einer Struktur versehenen Schicht auf einem Substrat
US4087695A (en) * 1977-01-17 1978-05-02 The United States Of America As Represented By The Secretary Of The Army Method for producing optical baffling material using pulsed electron beams
DE2705444A1 (de) * 1977-02-09 1978-08-10 Siemens Ag Verfahren zur lokal begrenzten erwaermung eines festkoerpers
US4154625A (en) * 1977-11-16 1979-05-15 Bell Telephone Laboratories, Incorporated Annealing of uncapped compound semiconductor materials by pulsed energy deposition
US4147563A (en) * 1978-08-09 1979-04-03 The United States Of America As Represented By The United States Department Of Energy Method for forming p-n junctions and solar-cells by laser-beam processing
US4155779A (en) * 1978-08-21 1979-05-22 Bell Telephone Laboratories, Incorporated Control techniques for annealing semiconductors

Also Published As

Publication number Publication date
FR2443138B1 (enExample) 1983-06-17
IT1127616B (it) 1986-05-21
JPS55500964A (enExample) 1980-11-13
IT7927611A0 (it) 1979-11-27
CA1129969A (en) 1982-08-17
GB2056769A (en) 1981-03-18
WO1980001121A1 (en) 1980-05-29
FR2443138A1 (fr) 1980-06-27
GB2056769B (en) 1983-03-30

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Legal Events

Date Code Title Description
A85 Still pending on 85-01-01
BV The patent application has lapsed