NL7802627A - Werkwijze voor het prepareren van het oppervlak van een halfgeleider en het hierbij gebruikte elektrolyt. - Google Patents
Werkwijze voor het prepareren van het oppervlak van een halfgeleider en het hierbij gebruikte elektrolyt.Info
- Publication number
- NL7802627A NL7802627A NL7802627A NL7802627A NL7802627A NL 7802627 A NL7802627 A NL 7802627A NL 7802627 A NL7802627 A NL 7802627A NL 7802627 A NL7802627 A NL 7802627A NL 7802627 A NL7802627 A NL 7802627A
- Authority
- NL
- Netherlands
- Prior art keywords
- preparing
- semiconductor
- electrolyte used
- electrolyte
- Prior art date
Links
- 239000003792 electrolyte Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02241—III-V semiconductor
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
- C25F3/12—Etching of semiconducting materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02258—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by anodic treatment, e.g. anodic oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
- H01L21/30635—Electrolytic etching of AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
- H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
- H01L21/3167—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself of anodic oxidation
- H01L21/31679—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself of anodic oxidation of AIII BV compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB10455/77A GB1556778A (en) | 1977-03-11 | 1977-03-11 | Preparation of semiconductor surfaces |
Publications (1)
Publication Number | Publication Date |
---|---|
NL7802627A true NL7802627A (nl) | 1978-09-13 |
Family
ID=9968180
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7802627A NL7802627A (nl) | 1977-03-11 | 1978-03-10 | Werkwijze voor het prepareren van het oppervlak van een halfgeleider en het hierbij gebruikte elektrolyt. |
Country Status (6)
Country | Link |
---|---|
US (1) | US4194954A (nl) |
JP (1) | JPS53135279A (nl) |
DE (1) | DE2810529A1 (nl) |
FR (1) | FR2383248A1 (nl) |
GB (1) | GB1556778A (nl) |
NL (1) | NL7802627A (nl) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4414066A (en) * | 1982-09-10 | 1983-11-08 | Bell Telephone Laboratories, Incorporated | Electrochemical photoetching of compound semiconductors |
US4685030A (en) * | 1985-04-29 | 1987-08-04 | Energy Conversion Devices, Inc. | Surface mounted circuits including hybrid circuits, having CVD interconnects, and method of preparing the circuits |
FR2675824B1 (fr) * | 1991-04-26 | 1994-02-04 | Alice Izrael | Procede de traitement de la surface gravee d'un corps semi conducteur ou semi-isolant, circuits integres obtenus selon un tel procede et appareil d'oxydation anodique pour mettre en óoeuvre un tel procede. |
US5911864A (en) * | 1996-11-08 | 1999-06-15 | Northrop Grumman Corporation | Method of fabricating a semiconductor structure |
US6103094A (en) * | 1998-08-24 | 2000-08-15 | General Electric Company | Method for controlling electrochemical drilling |
NL1014727C2 (nl) * | 2000-03-23 | 2001-09-25 | Univ Eindhoven Tech | Werkwijze voor het elektrolytisch polijsten van een metaal in aanwezigheid van een elektrolytsamenstelling, alsmede een vormdeel verkregen volgens een dergelijke werkwijze. |
KR100468865B1 (ko) * | 2003-06-18 | 2005-01-29 | 삼성전자주식회사 | 이차원적인 도펀트 분포의 분석을 위한 선택적 전기화학에칭방법 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL105600C (nl) * | 1956-06-16 | |||
NL121808C (nl) * | 1959-04-08 | |||
BE792614A (fr) * | 1971-12-13 | 1973-03-30 | Western Electric Co | Procede de realisation d'une couche d'oxyde sur un semi-conducteur |
US3929589A (en) * | 1974-02-08 | 1975-12-30 | Bell Telephone Labor Inc | Selective area oxidation of III-V compound semiconductors |
US4006047A (en) * | 1974-07-22 | 1977-02-01 | Amp Incorporated | Catalysts for electroless deposition of metals on comparatively low-temperature polyolefin and polyester substrates |
US4026741A (en) * | 1976-06-16 | 1977-05-31 | Bell Telephone Laboratories, Incorporated | Technique for preparation of stoichiometric III-V compound semiconductor surfaces |
-
1977
- 1977-03-11 GB GB10455/77A patent/GB1556778A/en not_active Expired
-
1978
- 1978-03-08 US US05/884,388 patent/US4194954A/en not_active Expired - Lifetime
- 1978-03-09 FR FR7806805A patent/FR2383248A1/fr not_active Withdrawn
- 1978-03-10 NL NL7802627A patent/NL7802627A/nl not_active Application Discontinuation
- 1978-03-10 DE DE19782810529 patent/DE2810529A1/de active Pending
- 1978-03-10 JP JP2755678A patent/JPS53135279A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JPS53135279A (en) | 1978-11-25 |
DE2810529A1 (de) | 1978-09-14 |
GB1556778A (en) | 1979-11-28 |
FR2383248A1 (fr) | 1978-10-06 |
US4194954A (en) | 1980-03-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
BV | The patent application has lapsed |