NL7606079A - Werkwijze voor het produceren van zinkborium- -silicaatglas via chemische dampafzetting als- mede voorwerpen voorzien van een volgens deze werkwijze afgezette glasfilm. - Google Patents

Werkwijze voor het produceren van zinkborium- -silicaatglas via chemische dampafzetting als- mede voorwerpen voorzien van een volgens deze werkwijze afgezette glasfilm.

Info

Publication number
NL7606079A
NL7606079A NL7606079A NL7606079A NL7606079A NL 7606079 A NL7606079 A NL 7606079A NL 7606079 A NL7606079 A NL 7606079A NL 7606079 A NL7606079 A NL 7606079A NL 7606079 A NL7606079 A NL 7606079A
Authority
NL
Netherlands
Prior art keywords
zincborium
procedure
production
vapor deposition
chemical vapor
Prior art date
Application number
NL7606079A
Other languages
English (en)
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of NL7606079A publication Critical patent/NL7606079A/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/062—Glass compositions containing silica with less than 40% silica by weight
    • C03C3/064—Glass compositions containing silica with less than 40% silica by weight containing boron
    • C03C3/066—Glass compositions containing silica with less than 40% silica by weight containing boron containing zinc
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Ceramic Engineering (AREA)
  • Glass Compositions (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Inorganic Insulating Materials (AREA)
  • Chemical Vapour Deposition (AREA)
NL7606079A 1975-06-06 1976-06-04 Werkwijze voor het produceren van zinkborium- -silicaatglas via chemische dampafzetting als- mede voorwerpen voorzien van een volgens deze werkwijze afgezette glasfilm. NL7606079A (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50067559A JPS51144183A (en) 1975-06-06 1975-06-06 Semiconductor element containing surface protection film

Publications (1)

Publication Number Publication Date
NL7606079A true NL7606079A (nl) 1976-12-08

Family

ID=13348429

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7606079A NL7606079A (nl) 1975-06-06 1976-06-04 Werkwijze voor het produceren van zinkborium- -silicaatglas via chemische dampafzetting als- mede voorwerpen voorzien van een volgens deze werkwijze afgezette glasfilm.

Country Status (4)

Country Link
US (1) US4105810A (nl)
JP (1) JPS51144183A (nl)
DE (1) DE2625243C3 (nl)
NL (1) NL7606079A (nl)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999021707A1 (en) * 1997-10-24 1999-05-06 Agfa-Gevaert Naamloze Vennootschap A laminate comprising a thin borosilicate glass substrate as a constituting layer
CN109991833A (zh) * 2019-05-08 2019-07-09 东莞得利钟表有限公司 一种温变手表表面及其成型方法

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL188775C (nl) * 1980-08-21 1992-09-16 Suwa Seikosha Kk Werkwijze voor het vervaardigen van een halfgeleiderinrichting met meerdere bedradingslagen, die door isolerende glaslagen van elkaar gescheiden zijn.
JPS5773956A (en) * 1980-10-27 1982-05-08 Hitachi Ltd Glass coated semiconductor device
EP0141496A1 (en) * 1983-08-31 1985-05-15 Morton Thiokol, Inc. Process for deposition silicon dioxide containing dopant onto a substrate
ATE64237T1 (de) * 1985-05-22 1991-06-15 Siemens Ag Verfahren zum herstellen von mit bor und phosphor dotierten siliziumoxid-schichten fuer integrierte halbleiterschaltungen.
JPH0682625B2 (ja) * 1985-06-04 1994-10-19 シーメンス ソーラー インダストリーズ，エル．ピー． 酸化亜鉛膜の蒸着方法
US4654269A (en) * 1985-06-21 1987-03-31 Fairchild Camera & Instrument Corp. Stress relieved intermediate insulating layer for multilayer metalization
US5160543A (en) * 1985-12-20 1992-11-03 Canon Kabushiki Kaisha Device for forming a deposited film
US5391232A (en) * 1985-12-26 1995-02-21 Canon Kabushiki Kaisha Device for forming a deposited film
US4980204A (en) * 1987-11-27 1990-12-25 Fujitsu Limited Metal organic chemical vapor deposition method with controlled gas flow rate
FR2631488B1 (fr) * 1988-05-10 1990-07-27 Thomson Hybrides Microondes Circuit integre hyperfrequence de type planar, comportant au moins un composant mesa, et son procede de fabrication
US5225106A (en) * 1988-09-16 1993-07-06 Glass Bulbs Limited Method of and apparatus for generating a fine dispersion of particles
FR2679898B1 (fr) * 1991-07-31 1993-11-05 Air Liquide Procede de formation d'une couche de silice sur une surface d'un objet en verre.
US5906861A (en) * 1993-07-20 1999-05-25 Raytheon Company Apparatus and method for depositing borophosphosilicate glass on a substrate
JPH0817174B2 (ja) * 1993-11-10 1996-02-21 キヤノン販売株式会社 絶縁膜の改質方法
US6090211A (en) * 1996-03-27 2000-07-18 Matsushita Electric Industrial Co., Ltd. Apparatus and method for forming semiconductor thin layer
US20030049372A1 (en) * 1997-08-11 2003-03-13 Cook Robert C. High rate deposition at low pressures in a small batch reactor
US6352593B1 (en) 1997-08-11 2002-03-05 Torrex Equipment Corp. Mini-batch process chamber
US6780464B2 (en) 1997-08-11 2004-08-24 Torrex Equipment Thermal gradient enhanced CVD deposition at low pressure
US7393561B2 (en) * 1997-08-11 2008-07-01 Applied Materials, Inc. Method and apparatus for layer by layer deposition of thin films
US6167837B1 (en) 1998-01-15 2001-01-02 Torrex Equipment Corp. Apparatus and method for plasma enhanced chemical vapor deposition (PECVD) in a single wafer reactor
WO2000016387A1 (en) * 1998-09-16 2000-03-23 Torrex Equipment Corporation High rate silicon nitride deposition method at low pressures
US6230651B1 (en) * 1998-12-30 2001-05-15 Lam Research Corporation Gas injection system for plasma processing
US6692574B1 (en) * 1999-08-30 2004-02-17 Si Diamond Technology, Inc. Gas dispersion apparatus for use in a hot filament chemical vapor deposition chamber
US6943392B2 (en) * 1999-08-30 2005-09-13 Micron Technology, Inc. Capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygen
CN1251293C (zh) * 1999-11-15 2006-04-12 兰姆研究有限公司 用于加工系统的材料和气体化学组成
US20030155079A1 (en) * 1999-11-15 2003-08-21 Andrew D. Bailey Plasma processing system with dynamic gas distribution control
US6558517B2 (en) * 2000-05-26 2003-05-06 Micron Technology, Inc. Physical vapor deposition methods
US6632322B1 (en) * 2000-06-30 2003-10-14 Lam Research Corporation Switched uniformity control
US7149575B2 (en) * 2000-09-18 2006-12-12 Cameron Health, Inc. Subcutaneous cardiac stimulator device having an anteriorly positioned electrode
US6838122B2 (en) * 2001-07-13 2005-01-04 Micron Technology, Inc. Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers
US20030017266A1 (en) * 2001-07-13 2003-01-23 Cem Basceri Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers, including such layers having a varied concentration of barium and strontium within the layer
US7011978B2 (en) 2001-08-17 2006-03-14 Micron Technology, Inc. Methods of forming capacitor constructions comprising perovskite-type dielectric materials with different amount of crystallinity regions
US20030070620A1 (en) * 2001-10-15 2003-04-17 Cooperberg David J. Tunable multi-zone gas injection system
US8092599B2 (en) * 2007-07-10 2012-01-10 Veeco Instruments Inc. Movable injectors in rotating disc gas reactors
US8542475B2 (en) * 2009-10-09 2013-09-24 The Penn State Research Foundation Self healing high energy glass capacitors
US9765429B2 (en) 2013-09-04 2017-09-19 President And Fellows Of Harvard College Growing films via sequential liquid/vapor phases
CN106030761B (zh) 2014-01-27 2019-09-13 威科仪器有限公司 用于化学气相沉积系统的晶片载体及其制造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3481781A (en) * 1967-03-17 1969-12-02 Rca Corp Silicate glass coating of semiconductor devices
US3652331A (en) * 1968-03-22 1972-03-28 Shumpei Yamazaki Process for forming a film on the surface of a substrate by a gas phase
NL7005770A (nl) * 1969-07-02 1971-01-05
US3828722A (en) * 1970-05-01 1974-08-13 Cogar Corp Apparatus for producing ion-free insulating layers
US3752701A (en) * 1970-07-27 1973-08-14 Gen Instrument Corp Glass for coating semiconductors, and semiconductor coated therewith
US3850687A (en) * 1971-05-26 1974-11-26 Rca Corp Method of densifying silicate glasses
US3900330A (en) * 1973-03-22 1975-08-19 Nippon Electric Glass Co Zno-b' 2'o' 3'-sio' 2 'glass coating compositions containing ta' 2'o' 5 'and a semiconductor device coated with the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999021707A1 (en) * 1997-10-24 1999-05-06 Agfa-Gevaert Naamloze Vennootschap A laminate comprising a thin borosilicate glass substrate as a constituting layer
CN109991833A (zh) * 2019-05-08 2019-07-09 东莞得利钟表有限公司 一种温变手表表面及其成型方法

Also Published As

Publication number Publication date
US4105810A (en) 1978-08-08
DE2625243C3 (de) 1978-09-14
JPS51144183A (en) 1976-12-10
DE2625243A1 (de) 1976-12-23
DE2625243B2 (de) 1978-01-19

Similar Documents

Publication Publication Date Title
NL7606079A (nl) Werkwijze voor het produceren van zinkborium- -silicaatglas via chemische dampafzetting als- mede voorwerpen voorzien van een volgens deze werkwijze afgezette glasfilm.
NL7415681A (nl) Werkwijze voor de bereiding van een pasteus mengsel voor het solderen van glas.
NL7607626A (nl) Werkwijze voor de vervaardiging van beklede samengestelde produkten.
NL7606320A (nl) Werkwijze voor de bereiding van een thermoplas- tisch filmvormend preparaat.
NL174062B (nl) Werkwijze voor de vervaardiging van een uit een polycarbonaat bestaand, bekleed substraat.
NL7709484A (nl) Werkwijze voor de vervaardiging van een glazen omhulling.
NL7611894A (nl) Werkwijze voor het bereiden van soda-kalkglas.
NL160853C (nl) Werkwijze voor het bereiden van een siliciumhoudende polyazamideverbinding en vezels bekleed met dit polyazamide.
NL191210C (nl) Werkwijze voor de vervaardiging van transparante tinoxydelagen.
NL180707B (nl) Werkwijze voor het vervaardigen van een positieve fotoresistlaag.
NL7602765A (nl) Werkwijze voor de vervaardiging van een glazen voorwerp.
NL7604371A (nl) Werkwijze voor de bereiding van organosiloxanen.
NL7608220A (nl) Werkwijze voor de bereiding van in uv-licht hardende bekledingsmiddelen met een hoge reactiviteit.
NL7710285A (nl) Werkwijze voor het vormen van een materiaallaag uit een oplossing van dit materiaal, werkwijze voor de vervaardiging van een brandwerend be- glazingspaneel en paneel, vervaardigd volgens deze werkwijze.
NL7509213A (nl) Werkwijze voor het vervaardigen van laagstruc- turen.
NL7603628A (nl) Werkwijze voor de vervaardiging van vooraf gekleurde voorwerpsglaasjes.
NL153161B (nl) Werkwijze voor de vervaardiging van vormvaste bouwelementen.
NL7904378A (nl) Werkwijze voor het vervaardigen van een dieelectricum met perowskietstructuur.
NL7605198A (nl) Werkwijze voor de bereiding van vloeibare bekledingsmiddelen.
NL7414977A (nl) Werkwijze voor de vervaardiging van voorwerpen van kwartsglas door trekken.
NL7414978A (nl) Werkwijze voor de vervaardiging van voorwerpen van kwartsglas door trekken.
NL7604612A (nl) Werkwijze voor het bereiden van ketogroepen bevattende onverzadigde silicium-organische verbindingen.
NL7614065A (nl) Werkwijze voor het bereiden van organosiloxanen.
NL7608515A (nl) Glasvezel met een lens aan het uiteinde, en een werkwijze voor de vervaardiging van zulk een glasvezel.
NL7608635A (nl) Werkwijze voor de vervaardiging van strukturen van positieve lagen fotolak op een drager.

Legal Events

Date Code Title Description
BN A decision not to publish the application has become irrevocable