NL7510863A - PHOTO DIODETECTOR WITH SELECTIVE FREQUENCY CHARACTERISTICS. - Google Patents

PHOTO DIODETECTOR WITH SELECTIVE FREQUENCY CHARACTERISTICS.

Info

Publication number
NL7510863A
NL7510863A NL7510863A NL7510863A NL7510863A NL 7510863 A NL7510863 A NL 7510863A NL 7510863 A NL7510863 A NL 7510863A NL 7510863 A NL7510863 A NL 7510863A NL 7510863 A NL7510863 A NL 7510863A
Authority
NL
Netherlands
Prior art keywords
diodetector
photo
frequency characteristics
selective frequency
selective
Prior art date
Application number
NL7510863A
Other languages
Dutch (nl)
Original Assignee
Northern Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northern Electric Co filed Critical Northern Electric Co
Publication of NL7510863A publication Critical patent/NL7510863A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
NL7510863A 1974-09-17 1975-09-16 PHOTO DIODETECTOR WITH SELECTIVE FREQUENCY CHARACTERISTICS. NL7510863A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA209,401A CA1003938A (en) 1974-09-17 1974-09-17 Photodiode detector with selective frequency response

Publications (1)

Publication Number Publication Date
NL7510863A true NL7510863A (en) 1976-03-19

Family

ID=4101165

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7510863A NL7510863A (en) 1974-09-17 1975-09-16 PHOTO DIODETECTOR WITH SELECTIVE FREQUENCY CHARACTERISTICS.

Country Status (7)

Country Link
JP (1) JPS6057233B2 (en)
CA (1) CA1003938A (en)
DE (2) DE7529280U (en)
FR (1) FR2285720A1 (en)
GB (1) GB1519466A (en)
NL (1) NL7510863A (en)
SE (1) SE7510418L (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2136202B (en) * 1983-03-02 1987-01-14 Int Standard Electric Corp Photodiode
JPS61204987A (en) * 1985-03-08 1986-09-11 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light emitting and receiving device
JPS639358A (en) * 1986-06-30 1988-01-16 Fuji Xerox Co Ltd Original reader
JPH0746721B2 (en) * 1986-09-09 1995-05-17 富士ゼロックス株式会社 Image sensor and manufacturing method thereof
US4757210A (en) * 1987-03-02 1988-07-12 Rockwell International Corporation Edge illuminated detector arrays for determination of spectral content
GB2228824A (en) * 1989-03-01 1990-09-05 Gen Electric Co Plc Radiation detectors
KR100560309B1 (en) * 2003-12-31 2006-03-14 동부아남반도체 주식회사 CMOS Image Sensor And Method For Detecting light color sensitivity Thereof

Also Published As

Publication number Publication date
DE2541224A1 (en) 1976-03-25
DE7529280U (en) 1980-01-24
JPS6057233B2 (en) 1985-12-13
CA1003938A (en) 1977-01-18
JPS5154387A (en) 1976-05-13
FR2285720A1 (en) 1976-04-16
GB1519466A (en) 1978-07-26
FR2285720B1 (en) 1978-11-03
SE7510418L (en) 1976-03-18

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Legal Events

Date Code Title Description
BV The patent application has lapsed