NL7510504A - SEMICONDUCTOR INJECTION LASER. - Google Patents

SEMICONDUCTOR INJECTION LASER.

Info

Publication number
NL7510504A
NL7510504A NL7510504A NL7510504A NL7510504A NL 7510504 A NL7510504 A NL 7510504A NL 7510504 A NL7510504 A NL 7510504A NL 7510504 A NL7510504 A NL 7510504A NL 7510504 A NL7510504 A NL 7510504A
Authority
NL
Netherlands
Prior art keywords
injection laser
semiconductor injection
semiconductor
laser
injection
Prior art date
Application number
NL7510504A
Other languages
Dutch (nl)
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of NL7510504A publication Critical patent/NL7510504A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
NL7510504A 1974-09-06 1975-09-05 SEMICONDUCTOR INJECTION LASER. NL7510504A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US50368374A 1974-09-06 1974-09-06

Publications (1)

Publication Number Publication Date
NL7510504A true NL7510504A (en) 1976-03-09

Family

ID=24003089

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7510504A NL7510504A (en) 1974-09-06 1975-09-05 SEMICONDUCTOR INJECTION LASER.

Country Status (5)

Country Link
JP (1) JPS5152793A (en)
DE (1) DE2538093A1 (en)
FR (1) FR2284205A1 (en)
GB (1) GB1500156A (en)
NL (1) NL7510504A (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5345186A (en) * 1976-10-05 1978-04-22 Sharp Corp Semiconductor laser
JPS5375883A (en) * 1976-12-17 1978-07-05 Nec Corp Semiconductor laser element and its production
JPS5376779A (en) * 1976-12-20 1978-07-07 Hitachi Ltd Semiconductor laser device
JPS5391593A (en) * 1977-01-24 1978-08-11 Oki Electric Ind Co Ltd Semiconductor device
JPS53134670U (en) * 1977-03-30 1978-10-25
JPS546788A (en) * 1977-06-17 1979-01-19 Nec Corp Stripe-type double hetero-junction laser element
NL180365C (en) * 1979-06-11 1987-02-02 Philips Nv METHOD FOR MANUFACTURING SEMICONDUCTOR COOLING BLOCKS AND SEMICONDUCTOR LASER CONTAINING A COOLING BLOCK MANUFACTURED BY THIS PROCESS.
JPS5753668U (en) * 1981-08-13 1982-03-29

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3723903A (en) * 1971-05-13 1973-03-27 Bell Telephone Labor Inc Dynamic fm control of the transverse modes of a self-pulsing semiconductor laser
US3733561A (en) * 1971-07-27 1973-05-15 Bell Telephone Labor Inc High power, fundamental transverse mode operation in double heterostructure lasers

Also Published As

Publication number Publication date
GB1500156A (en) 1978-02-08
DE2538093A1 (en) 1976-03-25
FR2284205A1 (en) 1976-04-02
JPS5152793A (en) 1976-05-10

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Legal Events

Date Code Title Description
BV The patent application has lapsed