JPS5152793A - HANDOTAI CHUNYUREEZA - Google Patents
HANDOTAI CHUNYUREEZAInfo
- Publication number
- JPS5152793A JPS5152793A JP10847475A JP10847475A JPS5152793A JP S5152793 A JPS5152793 A JP S5152793A JP 10847475 A JP10847475 A JP 10847475A JP 10847475 A JP10847475 A JP 10847475A JP S5152793 A JPS5152793 A JP S5152793A
- Authority
- JP
- Japan
- Prior art keywords
- chunyureeza
- handotai
- handotai chunyureeza
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US50368374A | 1974-09-06 | 1974-09-06 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5152793A true JPS5152793A (en) | 1976-05-10 |
Family
ID=24003089
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10847475A Pending JPS5152793A (en) | 1974-09-06 | 1975-09-05 | HANDOTAI CHUNYUREEZA |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS5152793A (en) |
DE (1) | DE2538093A1 (en) |
FR (1) | FR2284205A1 (en) |
GB (1) | GB1500156A (en) |
NL (1) | NL7510504A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5345186A (en) * | 1976-10-05 | 1978-04-22 | Sharp Corp | Semiconductor laser |
JPS5375883A (en) * | 1976-12-17 | 1978-07-05 | Nec Corp | Semiconductor laser element and its production |
JPS5376779A (en) * | 1976-12-20 | 1978-07-07 | Hitachi Ltd | Semiconductor laser device |
JPS5391593A (en) * | 1977-01-24 | 1978-08-11 | Oki Electric Ind Co Ltd | Semiconductor device |
JPS53134670U (en) * | 1977-03-30 | 1978-10-25 | ||
JPS546788A (en) * | 1977-06-17 | 1979-01-19 | Nec Corp | Stripe-type double hetero-junction laser element |
JPS5753668U (en) * | 1981-08-13 | 1982-03-29 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL180365C (en) * | 1979-06-11 | 1987-02-02 | Philips Nv | METHOD FOR MANUFACTURING SEMICONDUCTOR COOLING BLOCKS AND SEMICONDUCTOR LASER CONTAINING A COOLING BLOCK MANUFACTURED BY THIS PROCESS. |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3723903A (en) * | 1971-05-13 | 1973-03-27 | Bell Telephone Labor Inc | Dynamic fm control of the transverse modes of a self-pulsing semiconductor laser |
US3733561A (en) * | 1971-07-27 | 1973-05-15 | Bell Telephone Labor Inc | High power, fundamental transverse mode operation in double heterostructure lasers |
-
1975
- 1975-08-26 GB GB3517775A patent/GB1500156A/en not_active Expired
- 1975-08-27 DE DE19752538093 patent/DE2538093A1/en active Pending
- 1975-09-04 FR FR7527083A patent/FR2284205A1/en not_active Withdrawn
- 1975-09-05 JP JP10847475A patent/JPS5152793A/en active Pending
- 1975-09-05 NL NL7510504A patent/NL7510504A/en not_active Application Discontinuation
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5345186A (en) * | 1976-10-05 | 1978-04-22 | Sharp Corp | Semiconductor laser |
JPS5375883A (en) * | 1976-12-17 | 1978-07-05 | Nec Corp | Semiconductor laser element and its production |
JPS5376779A (en) * | 1976-12-20 | 1978-07-07 | Hitachi Ltd | Semiconductor laser device |
JPS5391593A (en) * | 1977-01-24 | 1978-08-11 | Oki Electric Ind Co Ltd | Semiconductor device |
JPS53134670U (en) * | 1977-03-30 | 1978-10-25 | ||
JPS546788A (en) * | 1977-06-17 | 1979-01-19 | Nec Corp | Stripe-type double hetero-junction laser element |
JPS6216036B2 (en) * | 1977-06-17 | 1987-04-10 | Nippon Electric Co | |
JPS5753668U (en) * | 1981-08-13 | 1982-03-29 |
Also Published As
Publication number | Publication date |
---|---|
FR2284205A1 (en) | 1976-04-02 |
GB1500156A (en) | 1978-02-08 |
NL7510504A (en) | 1976-03-09 |
DE2538093A1 (en) | 1976-03-25 |
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