NL7508004A - Halfgeleidende fotodetector. - Google Patents

Halfgeleidende fotodetector.

Info

Publication number
NL7508004A
NL7508004A NL7508004A NL7508004A NL7508004A NL 7508004 A NL7508004 A NL 7508004A NL 7508004 A NL7508004 A NL 7508004A NL 7508004 A NL7508004 A NL 7508004A NL 7508004 A NL7508004 A NL 7508004A
Authority
NL
Netherlands
Prior art keywords
semiconductive
photo detector
photo
detector
semiconductive photo
Prior art date
Application number
NL7508004A
Other languages
English (en)
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP49076322A external-priority patent/JPS516494A/ja
Priority claimed from JP50011227A external-priority patent/JPS5186990A/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of NL7508004A publication Critical patent/NL7508004A/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
NL7508004A 1974-07-05 1975-07-04 Halfgeleidende fotodetector. NL7508004A (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP49076322A JPS516494A (nl) 1974-07-05 1974-07-05
JP50011227A JPS5186990A (nl) 1975-01-29 1975-01-29

Publications (1)

Publication Number Publication Date
NL7508004A true NL7508004A (nl) 1976-01-07

Family

ID=26346641

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7508004A NL7508004A (nl) 1974-07-05 1975-07-04 Halfgeleidende fotodetector.

Country Status (3)

Country Link
US (1) US4079405A (nl)
DE (1) DE2529978A1 (nl)
NL (1) NL7508004A (nl)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4128843A (en) * 1977-10-14 1978-12-05 Honeywell Inc. GaP Directed field UV photodiode
US4383266A (en) * 1979-09-26 1983-05-10 Kokusai Denshin Denwa Kabushiki Kaisha Avalanche photo diode
US4383267A (en) * 1980-10-17 1983-05-10 Rca Corporation Avalanche photodiode and method of making same
US4616247A (en) * 1983-11-10 1986-10-07 At&T Bell Laboratories P-I-N and avalanche photodiodes
US5272345A (en) * 1989-09-22 1993-12-21 Ada Technologies, Inc. Calibration method and apparatus for measuring the concentration of components in a fluid
JP2810526B2 (ja) * 1989-11-21 1998-10-15 キヤノン株式会社 光電変換装置及び該装置を搭載した装置
US5241169A (en) * 1989-11-21 1993-08-31 Canon Kabushiki Kaisha Photoelectric conversion device having an improved control electrode structure and apparatus equipped with same
DE4243421A1 (en) * 1992-12-16 1993-07-29 Medium Sensor Gmbh Opto-electronic component for measuring limited region of ultraviolet radiation - contains fluorescent medium stimulated by ultraviolet, optical and filtering arrangement ensuring narrow spectral stimulation region
US6087703A (en) * 1994-06-07 2000-07-11 Mitsubishi Denki Kabushiki Kaisha Photodetector and photodetection circuit
US5965873A (en) * 1997-09-17 1999-10-12 Lockheed Martin Energy Research Corporation Integrated CMOS spectrometers
US6593636B1 (en) * 2000-12-05 2003-07-15 Udt Sensors, Inc. High speed silicon photodiodes and method of manufacture
US8120023B2 (en) 2006-06-05 2012-02-21 Udt Sensors, Inc. Low crosstalk, front-side illuminated, back-side contact photodiode array
US8686529B2 (en) 2010-01-19 2014-04-01 Osi Optoelectronics, Inc. Wavelength sensitive sensor photodiodes
US9178092B2 (en) 2006-11-01 2015-11-03 Osi Optoelectronics, Inc. Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays
US7935546B2 (en) * 2008-02-06 2011-05-03 International Business Machines Corporation Method and apparatus for measurement and control of photomask to substrate alignment
JP2012503314A (ja) 2008-09-15 2012-02-02 オーエスアイ．オプトエレクトロニクス．インコーポレイテッド 浅いｎ＋層を有する薄い能動層フィッシュボーン・フォトダイオードとその製造方法
US8399909B2 (en) 2009-05-12 2013-03-19 Osi Optoelectronics, Inc. Tetra-lateral position sensing detector
US8912615B2 (en) 2013-01-24 2014-12-16 Osi Optoelectronics, Inc. Shallow junction photodiode for detecting short wavelength light

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3534231A (en) * 1968-02-15 1970-10-13 Texas Instruments Inc Low bulk leakage current avalanche photodiode
US3742317A (en) * 1970-09-02 1973-06-26 Instr Inc Schottky barrier diode
FR2108781B1 (nl) * 1970-10-05 1974-10-31 Radiotechnique Compelec
US3769558A (en) * 1971-12-03 1973-10-30 Communications Satellite Corp Surface inversion solar cell and method of forming same
US3860945A (en) * 1973-03-29 1975-01-14 Rca Corp High frequency voltage-variable capacitor
US3820235A (en) * 1973-05-21 1974-06-28 Philco Ford Corp Guard ring structure for microwave schottky diode
US3911465A (en) * 1973-08-02 1975-10-07 Norman A Foss MOS photodiode
FR2252653B1 (nl) * 1973-11-28 1976-10-01 Thomson Csf

Also Published As

Publication number Publication date
DE2529978A1 (de) 1976-02-05
US4079405A (en) 1978-03-14

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